Grouped nanostructured units system forming a metamaterial

A method for forming and conditioning an elementary superlattice structure within an all-silicon light-to-electricity converter, comprising a crystalline silicon emitter mass delimited by a PN junction and a front exposure face operatively associated therewith, so as to achieve enhanced light-to-electricity conversion properties when said elementary superlattice structure, disposed within said silicon crystalline emitter mass, is illuminated with solar light illumination, the method comprising:

• (1) providing the crystalline silicon emitter mass comprising a heavily n-doped crystalline silicon (c-Si) emitter mass comprising elementary crystalline silicon units (ECSUs), with a density doping between 1018 and 1021 atom cm−3 up from said PN junction to said front exposure face of said converter, wherein said elementary crystalline silicon units (ECSUs) comprise a multiplicity of silicon atoms, and said heavily n-doped crystalline silicon (c-Si) emitter mass defines a part of a semi-conductor wafer,
• wherein said heavily n-doped crystalline silicon (c-Si) emitter mass comprises at least one buried amorphized silicon (a-Si) insertion formed at a predetermined depth within said crystalline silicon (c-Si) emitter mass, between upper and lower portions of said heavily n-doped crystalline Silicon (c-Si) emitter mass;
• (2) performing a first annealing by subjecting said amorphized silicon (a-Si) insertion and said heavily n-doped crystalline silicon (c-Si) emitter mass to annealing temperatures within a range of approximately 500 to approximately 550° C. in order to create dilatation forces and a built-in electric field between said amorphized silicon (a-Si) insertion and said upper and lower portions of said heavily n-doped crystalline silicon (c-Si) emitter mass,
• so that, on each side of said amorphized silicon insertion (a-Si), a strained crystalline silicon nanolayer (<c-Si), defined as an upper strained crystalline silicon (<c-Si>) transition wrapping nanolayer and a lower strained crystalline silicon (<c-Si>) transition wrapping nanolayer, respectively, is formed, wherein each of the upper and lower strained crystalline silicon (<c-Si>) transition wrapping nanolayers is delimited by a respective pair of nanomembranes, the respective pair of nanomembranes comprising a heterointerface crystalline silicon/amorphized silicon (<c-Si>/a-Si) nanomembrane and a heterointerface strained crystalline silicon/crystalline silicon (<c-Si>/c-Si>) nanomembrane to cover or wrap around the respective elementary crystalline silicon units (ECSUs) in each respective strained crystalline silicon (<c-Si>) transition wrapping nanolayer,
• so that a crystalline phase of said strained crystalline silicon (<c-Si>) transition wrapping nanolayers is reordered and said elementary crystalline silicon units (ECSUs) are settled and trapped within said strained crystalline silicon (<c-Si>) transition wrapping nanolayers, wherein said elementary crystalline silicon units (ECSUs) disposed within said upper and lower strained crystalline silicon (<c-Si>) transition wrapping nanolayers are subjected to tensile forces resulting from said dilatation forces, said built-in electric field, and said n-type doping, so as to transform said elementary crystalline silicon units (ECSUs) into elementary nanoscale units called SEGTONS and distributing said SEGTONS throughout said upper and lower strained crystalline silicon (<c-Si>) transition wrapping nanolayers, thereby forming the uniformized, silicon-modified elementary superlattice structure of a metamaterial called SEG-MATTER nanolayer;
• and
• (3) performing a second annealing by subjecting said SEGTONS to annealing temperatures in a range of from approximately 350° C. to approximately 450° C. so as to provide said SEGTONS with a permanent double negative charge state;
• wherein said SEGTONS are configured so that absorption of light illumination generates warm/hot electrons which exhibit high kinetic energy and which collide and interact with said SEGTONS, thereby effectively generating additional electron populations, so as to achieve enhanced light-to-electricity conversion properties.