Integrated circuit and method of manufacturing same

An integrated circuit, comprising:

• a first set of conductive traces in a first layer of the integrated circuit, the first set of conductive traces extending in a first direction;
• a second set of conductive traces in a second layer of the integrated circuit different from the first layer, the second set of conductive traces extending in a second direction different from the first direction;
• a gate terminal of a first p-type transistor comprising a first conductive trace of the second set of conductive traces;
• a gate terminal of a first n-type transistor comprising a second conductive trace of the second set of conductive traces;
• and
• a first via electrically coupled between a first conductive trace of the first set of conductive traces and the first conductive trace of the second set of conductive traces,
• wherein the first conductive trace of the second set of conductive traces and the second conductive trace of the second set of conductive traces are aligned along a common axis, and
• the first n-type transistor and the first p-type transistor being part of a first transmission gate.

An integrated circuit, comprising:

• a first PMOS transistor comprising a first gate, the first PMOS transistor being part of a first transmission gate;
• a first NMOS transistor comprising a second gate, the first NMOS transistor being part of a second transmission gate;
• a first dummy transistor;
• a second dummy transistor;
• a set of gates extending in a first direction in a first layer of the integrated circuit, a first gate portion of the set of gates extending across an active region of the first PMOS transistor and an active region of the first NMOS transistor, the first gate portion of the set of gates being the first gate of the first PMOS transistor and the second gate of the first NMOS transistor;
• and
• a first set of conductive features extending in a second direction different from the first direction, and in a second layer of the integrated circuit different from the first layer.