Memory management method, memory storage device and memory control circuit unit
AssigneePhison Electronics Corp.
InventorChen Yap Tan
Life of this patent
Estimating the term…
Loading patent…
AssigneePhison Electronics Corp.
InventorChen Yap Tan
Estimating the term…
An exemplary embodiment of the disclosure provides a memory management method for a rewritable non-volatile memory module. The method includes: receiving a first type command from a host system and temporarily storing the first type command to a first command queue; after receiving the first type command, receiving a second type command from the host system and temporarily storing the second type command to a second command queue; if the first command queue meets a preset condition, performing a programming operation for programming the rewritable non-volatile memory module according to the first type command in the first command queue; and after performing the programming operation, transmitting a response message corresponding to the second type command in the second command queue to the host system.
A memory management method for a rewriteable non-volatile memory module, the memory management method comprising:
A memory storage device, comprising:
A memory control circuit unit for controlling a rewritable non-volatile memory module, the memory control circuit unit comprising:
Dependencies are inferred from the claim text.