Set technique for phase change memory

A method comprising:

• identifying an address of a target memory cell to be set responsive to a set operation, the target memory cell included in a memory device having at least one pair of decks, the at least one pair of decks including a positive polarity deck and a negative polarity deck;
• and
• selecting a positive polarity set pulse for the set operation if the target memory cell is included in the positive polarity deck or selecting a negative polarity set pulse for the set operation if the target memory cell is included in the negative polarity deck,
• wherein the positive polarity set pulse and the negative polarity set pulse separately include a nucleation portion and a growth portion, each portion having a respective current amplitude and a respective time duration.

A system comprising:

• a processor circuitry;
• a memory device that includes at least one pair of decks, the at least one pair of decks to include a positive polarity deck and a negative polarity deck;
• and
• a memory controller having circuitry to:
• identify an address of a target memory cell at the memory device, and
• select a positive polarity set pulse for a set operation if the target memory cell is included in the positive polarity deck or to select a negative polarity set pulse if the target memory cell is included in the negative polarity deck,
• wherein the positive polarity set pulse and the negative polarity set pulse separately include a nucleation portion and a growth portion, each portion to have a respective current amplitude and a respective time duration.