Method of designing lithography features by self-assembly of block copolymer
AssigneeASML Netherlands B.V.
InventorsSander Frederik Wuister, Bart Laenens, Davide Ambesi
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Abstract
A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.
Claims20
A method for a self-assemblable block copolymer feature, the block copolymer feature comprising a first domain comprising a first polymer type and a second domain comprising a second polymer type, the method comprising:
- simulating at least part of a self-assembly process of the block copolymer feature by computer processing a model that provides an uncertainty or error in the position of the first domain within the block copolymer feature in relation to a provided length of the second polymer type;
- and
- using the provided uncertainty or error, forming a patterning device for creating a template for use in the self-assembly process, forming a template for guiding self-assemblable block copolymer in the self-assembly process, creating a self-assemblable block copolymer for use in the self-assembly process, or forming a pattern of features on a substrate using the self-assembly process.
A method for a plurality of adjacent self-assemblable block copolymer features at respective portions of a template to guide the self-assembly of the block copolymer of the block copolymer features, the block copolymer features respectively comprising a first domain comprising a first polymer type and a second domain comprising a second polymer type, the method comprising:
- simulating at least part of a self-assembly process of the block copolymer features by computer processing a model that determines an uncertainty or error in the position of the first domain within one of the block copolymer features from an offset between a designed self-assembly location of one of the template portions and the position of the first domain within the self-assembled block copolymer feature at that designed self-assembly location;
- and
- using the provided uncertainty or error, forming a patterning device for creating a template for use in the self-assembly process, forming a template for guiding self-assemblable block copolymer in the self-assembly process, creating a self-assemblable block copolymer for use in the self-assembly process, or forming a pattern of features on a substrate using the self-assembly process.
A method for a patterning process comprising self-assembly of a block copolymer feature, the block copolymer feature comprising a first domain comprising a first polymer type and a second domain comprising a second polymer type, the method comprising:
- simulating at least part of a self-assembly process of the block copolymer feature by computer processing a model that provides an uncertainty or error in the position of the first domain within the block copolymer feature in relation to a provided length of the second polymer type;
- and
- using the provided uncertainty or error, forming a patterning device for creating a template for use in the patterning device, forming a template for guiding self-assemblable block copolymer in the patterning process, creating a self-assemblable block copolymer for use in the patterning process, or forming a pattern of features on a substrate using the patterning process.
A non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
- simulate at least part of a self-assembly process of a self-assemblable block copolymer feature, the block copolymer feature comprising a first domain comprising a first polymer type and a second domain comprising a second polymer type, by computer processing a model that provides an uncertainty or error in the position of the first domain within the block copolymer feature in relation to a provided length of the second polymer type;
- and
- effect, using the provided uncertainty or error, formation of a patterning device for creating a template for use in the self-assembly process, formation of a template for guiding self-assemblable block copolymer in the self-assembly process, creation of a self-assemblable block copolymer for use in the self-assembly process, or formation of a pattern of features on a substrate using the self-assembly process.
A non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
- simulate at least part of a self-assembly process of a plurality of adjacent self-assemblable block copolymer features at respective portions of a template to guide the self-assembly of the block copolymer of the block copolymer features, the block copolymer features respectively comprising a first domain comprising a first polymer type and a second domain comprising a second polymer type, by computer processing a model that determines an uncertainty or error in the position of the first domain within one of the block copolymer features from an offset between a designed self-assembly location of one of the template portions and the position of the first domain within the self-assembled block copolymer feature at that designed self-assembly location;
- and
- effect, based on the provided uncertainty or error, formation of a patterning device for creating a template for use in the self-assembly process, formation of a template for guiding self-assemblable block copolymer in the self-assembly process, creation of a self-assemblable block copolymer for use in the self-assembly process, or formation of a pattern of features on a substrate using the self-assembly process.
Dependencies are inferred from the claim text.