Film strain sensor configuration including a processor

A sensor, comprising:

• a film portion;
• and
• one or more detectors fixed to the film portion,
• the detector including first to fourth detecting elements,
• the first detecting element including a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer,
• the second detecting element including a second magnetic layer, a second opposing magnetic layer, and a second nonmagnetic layer provided between the second magnetic layer and the second opposing magnetic layer,
• the third detecting element including a third magnetic layer, a third opposing magnetic layer, and a third nonmagnetic layer provided between the third magnetic layer and the third opposing magnetic layer,
• the fourth detecting element including a fourth magnetic layer, a fourth opposing magnetic layer, and a fourth nonmagnetic layer provided between the fourth magnetic layer and the fourth opposing magnetic layer,
• a magnetization of the first opposing magnetic layer being aligned with a magnetization of the second opposing magnetic layer,
• a magnetization of the third opposing magnetic layer being aligned with a magnetization of the fourth opposing magnetic layer,
• the magnetization of the third opposing magnetic layer crossing the magnetization of the first opposing magnetic layer,
• a magnitude of a strain of the film portion including a first range, and a second range larger than the first range,
• a first change rate of a first signal being higher than a second change rate of the first signal, the first signal corresponding to a first electrical resistance of the first detecting element, the first change rate being a change rate of the first signal with respect to a change of the magnitude of the strain within the first range, the second change rate being a change rate of the first signal with respect to a change of the magnitude of the strain within the second range,
• a change rate of a second signal with respect to the change of the magnitude of the strain within the second range being higher than the second change rate, the second signal corresponding to a second electrical resistance of the second detecting element,
• a third change rate of a third signal being higher than a fourth change rate of the third signal, the third signal corresponding to a third electrical resistance of the third detecting element, the third change rate being a change rate of the third signal with respect to the change of the strain within the first range, the fourth change rate being a change rate of the third signal with respect to the change of the strain within the second range,
• a change rate of a fourth signal with respect to the change of the strain within the second range being higher than the fourth change rate, the fourth signal corresponding to a fourth electrical resistance of the fourth detecting element.