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US 10,883,173 B2Granted
Gas storage cylinder, deposition system, and method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYeonock Han, Wonwoong Chung, Keum Seok Park, Pankwi Park, Jeongho Yoo, Younjoung Cho, Byung Koo Kong, Mijeong Kim, Jin Wook Lee, Changeun Jang
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.
Claims13
A gas-storage cylinder comprising:
- a cylinder, wherein a hull of the cylinder includes manganese and iron;
- a passivation portion disposed within and contacting an inner surface of the cylinder;
- and
- a valve provided at an entrance of the cylinder;
- and
- monochlorosilane stored within the cylinder and making contact with the passivation portion,
- wherein a manganese content of the hull of the cylinder ranges from about 1 wt % to about 26 wt %,
- wherein an iron content of the hull of the cylinder ranges from about 62 wt % to about 98.999 wt %,
- wherein the passivation portion is in a liquid state, is adsorbed on the inner surface of the cylinder, and the passivation portion includes monochlorosilane and/or derivatives thereof,
- wherein the inner surface of the cylinder includes a bottom surface, a lower portion of an inner-sidewall, and an upper portion of the inner-sidewall,
- wherein the upper portion of the inner-sidewall of the cylinder is provided between the lower portion of the inner-sidewall of the cylinder and the valve, and
- wherein the passivation portion covers the bottom surface, the lower portion of the inner-sidewall, and the upper portion of the inner-sidewall of the cylinder.
9 more elements
A deposition system, comprising:
- a gas-storage cylinder, wherein a hull of the gas-storage cylinder includes manganese and iron;
- a gas supply pipe connected to the gas-storage cylinder, wherein the gas supply pipe includes manganese;
- and a passivation portion disposed within and contacting an inner surface of the gas-storage cylinder and ara inner surface of the gas supply pipe,
- wherein a manganese content of the hull of the gas-storage cylinder ranges from about 1 wt% to about 2.6 wt%, a valve provided at an entrance of the gas-storage cylinder;
- and wherein an iron content of the hull of the gas-storage cylinder ranges from about 62 wt% to about 98.999 wt%%,
- wherein the passivation portion is in a liquid state, is adsorbed on the inner surface of the gas-storage cylinder and the inner surface of the gas supply pipe, and the passivation portion includes monochlorosilane and/or derivatives thereof,
- wherein the inner surface of the gas-storage cylinder includes a bottom surface, a lower portion of an inner-sidewall, and an upper portion of the inner-sidewall,
- wherein the upper portion of the inner-sidewall of the gas-storage cylinder is provided between the lower portion of the inner-sidewall of the gas-storag cylinder and the valve, and
- wherein the passivation portion covers the bottom surface, the lower portion of the i sidewall, and the upper portion of the inner-sidewall of the gas-storge cylinder.
6 more elements
Dependencies are inferred from the claim text.