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US 10,883,169 B2Granted
Sputtering target and method for producing sputtering target
AssigneesMitsubishi Materials Corporation, Solar Frontier K.K.
InventorsKeita Umemoto, Shoubin Zhang, Yuya Mutsuda
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Abstract
The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 μm or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.
Claims4
A sputtering target having a composition, containing:
- 45 at % to 90 at % of In, and
- the remainder including Cu and inevitable impurities,
- wherein an In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3,
- an average grain size of the Cu11In9 compound phase is 150 μm or less,
- an amount of oxygen is 500 mass ppm or less, and
- a theoretical density ratio is 85% or more.
3 more elements
Dependencies are inferred from the claim text.