Method of forming tin-containing material film and method of synthesizing a tin compound

A method of forming a tin-containing material film, the method comprising:

• providing a substrate in a reactor;
• supplying a tin precursor to the substrate to form a monolayer of the tin precursor, the tin precursor being represented by Chemical Formula (I);
• supplying a reactant onto the monolayer to form the tin-containing material film;
• and
• purging the reactor,
• wherein, in Chemical Formula (I), R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group, and
• wherein:
• the reactant includes NH3, a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and
• the tin material film is a tin nitride film.

A method of forming a tin-containing material film, the method comprising sequentially performing a plurality of deposition cycles, each deposition cycle including:

• forming a monolayer of a tin precursor compound on a substrate in a reaction space, the tin precursor compound having a structure represented by Chemical Formula (I);
• forming a tin-containing material film by supplying a reactant onto the monolayer;
• and
• removing unreacted reactant from the vicinity of a surface of the tin-containing material film by purging the unreacted reactant,
• wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group, and
• wherein:
• the reactant includes NH3, a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and
• the tin material film is a tin nitride film.