US 10,882,752 B2 · Method for producing synthetic hectorite at low temperature and atmospheric pressure

Abstract

The present invention relates to a low-temperature/atmospheric-pressure method for producing synthetic hectorite and synthetic hectorite produced using the same, and more particularly, provides a method for producing synthetic hectorite at a low temperature and atmospheric pressure and synthetic hectorite produced using the same such that: a crystallization reaction may be carried out under a low-temperature/atmospheric-pressure condition by introducing a step of forming a precipitate and using a weak basic catalyst when the Li—Mg precipitates are formed; a reaction time may be reduced; synthetic hectorite with excellent major application properties may be prepared; and the properties may be easily controlled by controlling a composition ratio of a reactant.

Claims8

Dependent claims

A method for producing synthetic hectorite, the method comprising the steps of:

1) preparing a precursor solution mixture including a lithium (Li) precursor, a fluorine (F) precursor, and a magnesium (Mg) precursor, wherein a molar ratio of the lithium precursor to the fluorine precursor is 1:1 to 1:10;
2) adding a basic catalyst into the precursor solution mixture and forming a Li—Mg precipitate, wherein:
the basic catalyst is a mixture of a strong base and a weak base and the strong base and the weak base are added in a molar ratio of 1:2 to 1:10;
and
3) adding a silica (Si) precursor to the Li—Mg precipitate and carrying out a crystallization reaction at a temperature of 70° C. to 120° C. under a pressure of 1 bar to 1.21 bar for 3 hours to 10 hours.

2 more elements

Dependencies are inferred from the claim text.

Method for producing synthetic hectorite at low temperature and atmospheric pressure

Life of this patent

Method for producing synthetic hectorite at low temperature and atmospheric pressure

Life of this patent

Abstract

Claims8