Techniques, system and apparatus for selective deposition of a layer using angled ions

A system, comprising:

• a process chamber to house a substrate, the substrate comprising a substrate surface, the substrate surface including at least one structure, having a three-dimensional shape;
• a deposition source, disposed adjacent the process chamber and arranged to generate depositing species at a first angle of incidence with respect to a perpendicular to a substrate plane to form a layer on the substrate;
• an angled ion source to direct angled ions to the process chamber at a second angle of incidence with respect to a perpendicular to a substrate plane, opposite the first angle of incidence;
• a substrate stage, disposed in the process chamber, to scan the substrate from a first position to a second position;
• and
• a controller coupled to the angled ion source, the controller arranged to send at least one control signal to adjust the angle of incidence based upon structure information regarding the at least one structure, the structure information comprising at least one of a height of the at least one structure and a pitch between adjacent structures of the at least one structure.

An apparatus, comprising:

• a deposition source, disposed adjacent a process chamber and arranged to generate a depositing species at a first angle of incidence with respect to a perpendicular to a substrate plane to form a layer on a substrate, disposed in the process chamber;
• an angled ion source to direct angled ions to the process chamber at a second angle of incidence, opposite the first angle of incidence with respect to a perpendicular to a substrate plane;
• and
• a controller, coupled to the angled ion source, the controller comprising:
• a processor;
• and
• a memory unit coupled to the processor, including a selective deposition control routine, the selective deposition control routine operative on the processor to control the angled ion source, the selective deposition control routine comprising a sputter control processor to:
• receive structure information for a substrate to be processed during an ion exposure;
• and
• calculate the angle of incidence for the angled ions, based upon the structure information, the structure information comprising at least one of a height of the at least one structure and a pitch between adjacent structures of the at least one structure.