# US 10,873,991 B2 · Photonic near infrared heater

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- Number: US 10,873,991 B2
- Document ID: US10873991B2
- Status: Granted
- Kind: B2
- Application number: 15/879,885
- Filed: 2018-01-25
- Published: 2018-08-02
- Granted: 2020-12-22
- Earliest claimed: 2017-01-27
- Assignees: The Regents of the University of California
- Applicants: Ravi Shankar Prasher; Hao Wang; Justin Palmer Freedman
- Inventors: Ravi Shankar Prasher; Hao Wang; Justin Palmer Freedman
- Web page: https://patentgrep.com/patent/US10873991B2

## CPC

- H05B 3/009: {heating devices not specially adapted for a particular application}
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL

## Abstract

A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).

## Claims

### Claim 1

A multilayer photonic stack comprising:
a lower portion of layers comprising a first layer of A and a first layer of B,
the first layer of A comprising at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, and
the first layer of B comprising at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and indium tin oxide (ITO); and
an upper portion of layers disposed on the lower portion of layers, the upper portion of layers comprising a plurality of sets of a layer of C and a layer of D disposed on the layer of C,
the layer of C and the layer of D each comprising at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and indium tin oxide (ITO), and the layer of C and the layer of D being different compositions;
the multilayer photonic stack having an emissivity in the near infrared (NIR) range with the emissivity being at a maximum at a wavelength between 0.7 microns and 3 microns, and the multilayer photonic stack being disposed on a filament coil of a radiative heater.

### Claim 2 (depends on 1)

The multilayer photonic stack of claim 1, wherein the lower portion of layers comprises a second layer of A to form a structure comprising the first layer of B disposed between the first layer of A and the second layer of A.

### Claim 3 (depends on 1)

The multilayer photonic stack of claim 1, wherein a thickness of the first layer of A is 5 nanometers to 1 micron, and wherein a thickness of the first layer of B is 5 nanometers to 1 micron.

### Claim 4 (depends on 1)

The multilayer photonic stack of claim 1, wherein a thickness of the layer of C is 5 nanometers to 1 micron, and wherein a thickness of the layer of D is 5 nanometers to 1 micron.

### Claim 5 (depends on 2)

The multilayer photonic stack of claim 2, wherein a thickness of the second layer of A is 5 nanometers to 1 micron.