# US 10,873,275 B2 · Triboelectric generator > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,873,275 B2 - Document ID: US10873275B2 - Status: Granted - Kind: B2 - Application number: 15/810,679 - Filed: 2017-11-13 - Published: 2018-05-24 - Granted: 2020-12-22 - Earliest claimed: 2016-11-23 - Assignees: Samsung Electronics Co., Ltd.; Research & Business Foundation Sungkyunkwan University - Applicants: Samsung Electronics Co., Ltd.; Research & Business Foundation Sungkyunkwan University - Inventors: Hyeonjin Shin; Sangwoo Kim; Seongsu Kim; Jihye Kim - Web page: https://patentgrep.com/patent/US10873275B2 ## CPC - H02N 1/04: Friction generators - H02N: ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ## Abstract A triboelectric generator includes a ferroelectric material layer and a protective layer provided over the ferroelectric material layer including first and second electrodes that are spaced apart from each other, a polarized ferroelectric material layer provided over the first electrode and configured to generate electrical energy by contact with another material, and a protective layer provided over the ferroelectric layer to prevent diffusion of charges generated on the ferroelectric layer. ## Claims ### Claim 1 A triboelectric generator comprising: a first electrode and a second electrode, the first and second electrodes being spaced apart from each other; a polarized ferroelectric material layer over the first electrode; and a protective layer being spaced apart from the first electrode with the ferroelectric material layer interposed therebetween, the protective layer comprising hexagonal-boron nitride (h-BN) and configured to trap charges generated on the ferroelectric material layer to prevent the charges from diffusing to the outside, wherein the second electrode is configured to repeat a contact state and a non-contact state with the protective layer, and the ferroelectric material layer is configured to generate electricity by a separation between the protective layer and the second electrode, the separation caused by a transition from the contact state to the non-contact state. ### Claim 2 (depends on 1) The triboelectric generator of claim 1, wherein: the second electrode has a charging characteristic that is opposite to a charging characteristic of the polarized ferroelectric material layer. ### Claim 3 (depends on 2) The triboelectric generator of claim 2, wherein: the ferroelectric material layer comprises at least one of polyvinylidene fluoride (PVDF), PVDF-trifluoroethylene (TrFE), lead zirconate titanate (PZT), platinum oxide (PTO), barium tin oxide (BTO), bismuth ferric oxide (BFO), KNbO3, NaNbO3, germanium telluride (GeTe), zinc-oxide (ZnO), ZnSnO3, and gallium nitride (GaN). ### Claim 4 (depends on 2) The triboelectric generator of claim 2, wherein: the protective layer includes transition metal dichalcogenide (TMD). ### Claim 5 (depends on 4) The triboelectric generator of claim 4, wherein: the TMD comprises one of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), and rhenium (Re), and one of sulfur (S), selenium (Se), and tellurium (Te). ### Claim 6 (depends on 4) The triboelectric generator of claim 4, wherein: the protective layer has a thickness of about 10 nm or less. ### Claim 7 (depends on 2) The triboelectric generator of claim 2, wherein the ferroelectric material layer is positively polarized or negatively polarized according to the charging characteristic of the second electrode. ### Claim 8 (depends on 1) The triboelectric generator of claim 1, wherein the first and second electrodes include at least one of carbon nanotubes (CNTs), graphene, and silver (Ag) nanowires. ### Claim 9 A triboelectric generator comprising: a first electrode and a second electrode, the first and second electrodes being spaced apart from each other, and including at least one of carbon nanotubes (CNTs), graphene, and silver (Ag) nanowires; a polarized ferroelectric material layer over the first electrode and configured to generate electrical energy by contact with another material, the ferroelectric material layer comprising PVDF-trifluoroethylene (TrFE); a protective layer being spaced apart from the first electrode with the ferroelectric material layer interposed therebetween, the protective layer comprising hexagonal-boron nitride (h-BN) and configured to trap charges generated on the ferroelectric material layer to prevent the charges from diffusing to the outside; and a triboelectric charging layer under the second electrode. ### Claim 10 (depends on 9) The triboelectric generator of claim 9, wherein the triboelectric charging layer has a charging characteristic that is opposite to a charging characteristic of the ferroelectric material layer. ### Claim 11 (depends on 10) The triboelectric generator of claim 10, wherein the polarized ferroelectric material layer is configured to generate electrical energy by contact between the triboelectric charging layer and the protective layer. ### Claim 12 (depends on 10) The triboelectric generator of claim 10, wherein: the protective layer includes transition metal dichalcogenide (TMD). ### Claim 13 (depends on 12) The triboelectric generator of claim 12, wherein: the TMD comprises one of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), and rhenium (Re), and one of sulfur (S), selenium (Se), and tellurium (Te). ### Claim 14 (depends on 12) The triboelectric generator of claim 12, wherein: the protective layer has a thickness of about 10 nm or less. ### Claim 15 (depends on 10) The triboelectric generator of claim 10, wherein: the ferroelectric material layer is positively polarized or negatively polarized according to the charging characteristic of the triboelectric charging layer.