# US 10,873,047 B2 · Quantum dot light-emitting diode devices and manufacturing methods, apparatuses thereof

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- Number: US 10,873,047 B2
- Document ID: US10873047B2
- Status: Granted
- Kind: B2
- Application number: 16/419,176
- Filed: 2019-05-22
- Published: 2019-09-12
- Granted: 2020-12-22
- Earliest claimed: 2018-01-31
- Assignees: Kunshan New Flat Panel Display Technology Center Co., Ltd.; KunShan Go-Visionox Opto-Electronics Co., Ltd
- Applicants: Kunshan New Flat Panel Display Technology Center Co., Ltd.; KunShan Go-Visionox Opto-Electronics Co., Ltd.
- Inventors: Jiantai Wang; Rubo Xing; Xiaolong Yang; Huimin Liu; Ping Sun; Dong Wei
- Web page: https://patentgrep.com/patent/US10873047B2

## CPC

- H10K 71/15: characterised by the solvent used
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K 71/441: {in the presence of solvent vapors, e.g. solvent vapour annealing}
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.

## Claims

### Claim 1

A method of manufacturing a quantum dot light-emitting diode device, comprising:
dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution;
depositing the first mixed solution on one surface of a formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles;
wherein end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer;
wherein the dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution comprises the steps of:
dissolving the polyelectrolyte with a first solvent to obtain a first solution;
dissolving the nanoparticles having inorganic semiconductor properties with a second solvent to obtain a second solution; and
mixing the first solution with the second solution to form the first mixed solution.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the method further comprises:
dissolving a polymer and nanoparticles having inorganic semiconductor properties to form a second mixed solution;
depositing the second mixed solution on the other surface of the formed quantum dot light-emitting layer to form a hole transport layer containing the polymer and the nanoparticles.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the first solvent is mutually miscible with the second solvent.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the first solvent and the second solvent are a same solvent.

### Claim 5 (depends on 1)

The method according to claim 1, wherein
the concentration of the polyelectrolyte in the first mixed solution is less than 1 mg/ml, and
the concentration of the nanoparticles in the first mixed solution is greater than or equal to 15 mg/ml and less than or equal to 25 mg/ml.

### Claim 6 (depends on 2)

The method according to claim 2, wherein the dissolving a polymer and nanoparticles having inorganic semiconductor properties to form a second mixed solution comprises the steps of:
dissolving the polymer with a third solvent to obtain a third solution;
dissolving the nanoparticles having inorganic semiconductor properties with a fourth solvent to obtain a fourth solution; and
mixing the third solution with the fourth solution to form the second mixed solution.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the third solvent is mutually miscible with the fourth solvent.

### Claim 8 (depends on 6)

The method according to claim 6, wherein the third solvent and the fourth solvent are a same solvent.

### Claim 9 (depends on 6)

The method according to claim 6 wherein
the concentration of the polymer in the second mixed solution is less than 1 mg/ml, and
the concentration of the nanoparticles having inorganic semiconductor properties in the second mixed solution is greater than or equal to 15 mg/ml and less than or equal to 25 mg/ml.