# US 10,873,046 B2 · Display device with encapsulation layer with varying ratios of carbon to silicon and oxygen to silicon and method of fabricating the same

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- Number: US 10,873,046 B2
- Document ID: US10873046B2
- Status: Granted
- Kind: B2
- Application number: 16/703,593
- Filed: 2019-12-04
- Published: 2020-04-16
- Granted: 2020-12-22
- Earliest claimed: 2017-04-03
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Jaeheung Ha; Jongwoo Kim; Byoungduk Lee; Seungjae Lee; Yoonhyeung Cho; Youngcheol Joo
- Web page: https://patentgrep.com/patent/US10873046B2

## CPC

- C23C 16/325: {Silicon carbide}
- B32B 27/06: as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08)}
- C23C 14/325: {Electric arc evaporation}
- C23C 14/548: {Controlling the composition}
- C23C 16/401: {containing silicon}
- H10F 19/85: Protective back sheets
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 59/871: {Self-supporting sealing arrangements}
- H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- Y02E 10/50: Photovoltaic [PV] energy
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A display device includes a organic light emitting device and an encapsulation structure disposed on the organic light emitting device that seals the organic light emitting device. The encapsulation structure includes a first inorganic encapsulation layer disposed on the organic light emitting device, an organic layer disposed on the first inorganic encapsulation layer, and a second inorganic encapsulation layer disposed on the organic layer. The organic layer includes a first organic layer disposed on the first inorganic encapsulation layer and a second organic layer disposed on the first organic layer. An atomic ratio of carbon to silicon in the first organic layer is less than an atomic ratio of carbon to silicon in the second organic layer.

## Claims

### Claim 1

A method of fabricating a display device, comprising:
preparing a organic light emitting device;
depositing an inorganic material on the organic light emitting device to form a first inorganic encapsulation layer;
forming an organic layer on the first inorganic encapsulation layer; and
depositing an inorganic material on the organic layer to, form a second inorganic encapsulation layer,
wherein forming the organic layer comprises:
depositing an organic, material under a first oxygen partial pressure to form a first organic layer on the first inorganic encapsulation layer; and
depositing an organic material under a second oxygen partial pressure that is less than the first oxygen partial pressure to form a second organic layer on the first organic layer,
wherein the first organic layer has a greater content ratio of oxygen to silicon and a lower content ratio of carbon to silicon than the second organic layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the organic layer further comprises oxidizing the organic materials, and
the organic material in forming the first organic layer is more actively oxidized than that in forming the second organic layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the forming of the first organic layer and the forming of the second organic layer are continuous processes.

### Claim 4 (depends on 3)

The method of claim 3, wherein the first organic layer is formed while gradually decreasing the first oxygen partial pressure.

### Claim 5 (depends on 1)

The method of claim 1, wherein the organic material comprises alkoxysilane-based compounds or siloxane-based compounds.

### Claim 6 (depends on 5)

The method of claim 5, wherein the first organic layer and the second organic layer are formed of the same organic material.
