# US 10,873,028 B2 · Deposition mask and mask assembly including the same

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- Number: US 10,873,028 B2
- Document ID: US10873028B2
- Status: Granted
- Kind: B2
- Application number: 16/397,948
- Filed: 2019-04-29
- Published: 2019-12-12
- Granted: 2020-12-22
- Earliest claimed: 2018-06-12
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Sanghoon Kim; Seungjin Lee
- Web page: https://patentgrep.com/patent/US10873028B2

## CPC

- C23C 14/042: {using masks}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10K 71/166: {using selective deposition, e.g. using a mask}
- H10K 71/20: Changing the shape of the active layer in the devices, e.g. patterning
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A deposition mask may include a patterning region provided with a pattern portion, and a plurality of bonding regions provided near opposite ends of the patterning region in a first direction. The pattern portion may include a first pattern portion, in which first pattern holes are defined, and a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction. A minimum distance between adjacent ones of the second pattern holes may be larger than a minimum distance between adjacent ones of the first pattern holes.

## Claims

### Claim 1

A deposition mask, comprising:
a patterning region provided with a pattern portion; and
a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
wherein the pattern portion comprises:
a first pattern portion, in which first pattern holes are defined; and
a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction, the second pattern holes forming a plurality of rows arranged in the first direction, each of the second pattern holes in even numbered rows being shifted in a second direction from a corresponding one of the second pattern holes in odd numbered rows,
wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is larger than a first distance, which is a minimum distance between adjacent ones of the first pattern holes.

### Claim 2 (depends on 1)

The deposition mask of claim 1, wherein a size of each of the first pattern holes is substantially equal to a size of each of the second pattern holes.

### Claim 3 (depends on 1)

The deposition mask of claim 1, wherein the second distance is larger than or equal to about 20 μm.

### Claim 4 (depends on 1)

The deposition mask of claim 1, wherein each of the second pattern portions comprises:
a first portion, which is provided adjacent to a bonding region of the bonding regions, and in which the second pattern holes are defined; and
a second portion, which is provided between the first portion and the first pattern portion, and in which the first pattern holes are defined.

### Claim 5 (depends on 4)

The deposition mask of claim 4, wherein, in the first portion, the second pattern holes are defined to form at least two rows.

### Claim 6

A deposition mask, comprising:
a patterning region provided with a pattern portion; and
a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
wherein the pattern portion comprises:
a first pattern portion, in which first pattern holes are defined; and
a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction,
wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is larger than a first distance, which is a minimum distance between adjacent ones of the first pattern holes,
wherein each of the second pattern portions comprises:
a first portion, which is provided adjacent to a bonding region of the bonding regions, and in which the second pattern holes are defined;
a second portion, which is provided between the first portion and the first pattern portion, and in which the first pattern holes are defined; and
a third portion, which is provided between the first portion and the bonding region, and in which third pattern holes are defined,
wherein a third distance, which is a minimum distance between adjacent ones of the third pattern holes, is larger than the second distance.

### Claim 7 (depends on 1)

The deposition mask of claim 1, wherein the first pattern portion comprises:
a plurality of deposition parts, which are spaced apart from each other in the first direction, and in which the first pattern holes are defined; and
at least one blocking part provided between the deposition parts.

### Claim 8 (depends on 7)

The deposition mask of claim 7, wherein there are no holes in the blocking part.

### Claim 9 (depends on 7)

The deposition mask of claim 7, wherein a plurality of fourth pattern holes are defined in the blocking part, and
a size of each of the fourth pattern holes is substantially equal to a size of each of the first pattern holes.

### Claim 10 (depends on 9)

The deposition mask of claim 9, wherein a minimum distance between adjacent ones of the fourth pattern holes is larger than or equal to the second distance.

### Claim 11

A deposition mask, comprising:
a patterning region provided with a pattern portion; and
a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
wherein the pattern portion comprises:
a first pattern portion, in which first pattern holes are defined; and
a plurality of second pattern portions, in which second pattern holes are defined, and which are located between opposite ends of the first pattern portion and the bonding regions in the first direction,
wherein a second distance, which is a minimum distance between adjacent ones of the second pattern holes, is larger than a first distance, which is a minimum distance between adjacent ones of the first pattern holes,
wherein the first pattern portion comprises:
a plurality of deposition parts, which are spaced apart from each other in the first direction, and in which the first pattern holes are defined; and
at least one blocking part provided between the deposition parts, wherein a plurality of fourth pattern holes are defined in the blocking part, and
a size of each of the fourth pattern holes is less than a size of each of the first pattern holes.

### Claim 12 (depends on 11)

The deposition mask of claim 11, wherein a minimum distance between adjacent ones of the fourth pattern holes is substantially equal to the first distance.

### Claim 13 (depends on 7)

The deposition mask of claim 7, wherein a width of the blocking part in the first direction is different than a width of the second pattern portions in the first direction.

### Claim 14 (depends on 1)

The deposition mask of claim 1, wherein a largest distance between the first pattern holes is substantially equal to the second distance.

### Claim 15 (depends on 1)

The deposition mask of claim 1, further comprising cutting parts, which are provided adjacent to opposite ends of the bonding regions in the first direction,
wherein each of the cutting parts comprises a dummy pattern portion, in which dummy pattern holes are defined, and
the dummy pattern holes are defined to have substantially a same arrangement structure as that of the first pattern holes.

### Claim 16 (depends on 15)

The deposition mask of claim 15, wherein a clamping recess is defined at each of the cutting parts, which is recessed inward from an outer side of the cutting parts in the first direction.

### Claim 17

A mask assembly, comprising:
a frame set; and
a plurality of deposition masks disposed on the frame set, each of the plurality of deposition masks extending in a first direction,
wherein the frame set comprises:
a support frame; and
a plurality of support bars, which extend in a second direction crossing the first direction and are arranged in the first direction, opposite ends of each of the plurality of support bars in the second direction being coupled to the support frame,
wherein each of the deposition masks comprises:
a plurality of bonding regions, which are spaced apart from each other in the first direction and are fixed to the support frame; and
a patterning region, which is provided between the bonding regions and in which a pattern portion is disposed,
wherein the pattern portion comprises:
a first pattern portion, which is provided to overlap a center of the pattern portion, and in which a plurality of first pattern holes are defined; and
a plurality of second pattern portions, which are provided between opposite ends of the first pattern portion and the bonding regions in the first direction, a plurality of second pattern holes being defined in at least a region of each of the plurality of second pattern portions, the second pattern holes forming a plurality of rows arranged in the first direction, each of the second pattern holes in even numbered rows being shifted in the second direction from a corresponding one of the second pattern holes in odd numbered rows,
wherein a minimum distance between adjacent ones of the second pattern holes is larger than a minimum distance between adjacent ones of the first pattern holes.

### Claim 18 (depends on 17)

The mask assembly of claim 17, wherein a size of each of the first pattern holes is substantially equal to a size of each of the second pattern holes.

### Claim 19 (depends on 17)

The mask assembly of claim 17, wherein the support bars comprise:
at least one first support bar arranged in the first direction and overlapping a portion of the first pattern portion; and
second support bars, which are the outermost ones of the support bars in the first direction and are overlapping the second pattern portions of each of the deposition masks.

### Claim 20 (depends on 19)

The mask assembly of claim 19, wherein the first pattern portion comprises:
a plurality of deposition parts, which are spaced apart from each other in the first direction, and in which the first pattern holes are defined; and
at least one blocking part, which is provided between the deposition parts and is overlapping the first support bar.

### Claim 21 (depends on 19)

The mask assembly of claim 19, wherein a width of each of the second support bars in the first direction is different than a width of each of the first support bars in the first direction.

### Claim 22 (depends on 17)

The mask assembly of claim 17, wherein there are no holes in the bonding regions.

### Claim 23 (depends on 17)

The mask assembly of claim 17, wherein each of inner side portions of the support frame, which are opposite to each other in the second direction, is provided to have a plurality of coupling pockets arranged in the first direction, and
opposite ends of the support bars are disposed in the plurality of coupling pockets.

### Claim 24 (depends on 17)

The mask assembly of claim 17, wherein the minimum distance between adjacent ones of the second pattern holes is larger than or equal to about 20 μm.

### Claim 25 (depends on 17)

The mask assembly of claim 17, wherein, in the second pattern portions, the second pattern holes form at least two rows.

### Claim 26

A deposition mask, comprising:
a patterning region, in which a plurality of pattern holes are defined; and
a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
wherein a minimum distance between adjacent ones of the pattern holes, which are defined in portions of the patterning region adjacent to the bonding regions, is larger than a minimum distance between adjacent ones of the pattern holes, which are defined in another portion of the patterning region other than the portions, the pattern holes in the portions forming a plurality of rows arranged in the first direction, each of the pattern holes in even numbered rows being shifted in a second direction from a corresponding one of the pattern holes in odd numbered rows.

### Claim 27

A deposition mask, comprising:
a patterning region including a pattern portion; and
a plurality of bonding regions provided near opposite ends of the patterning region in a first direction,
wherein the pattern portion comprises:
a first pattern portion, in which pattern holes in a first arrangement structure are defined; and
a plurality of second pattern portions, pattern holes in a second arrangement structure being defined in at least a portion of the plurality of second pattern portions,
wherein a minimum distance between the pattern holes in the second arrangement structure is larger than a minimum distance between the pattern holes in the first arrangement structure, the pattern holes in the second arrangement structure forming a plurality of rows arranged in the first direction, each of the pattern holes in even numbered rows being shifted in a second direction from a corresponding one of the pattern holes in odd numbered rows.

### Claim 28 (depends on 27)

The deposition mask of claim 27, wherein the minimum distance between the pattern holes in the second arrangement structure is larger than or equal to about 20 μm.

### Claim 29 (depends on 27)

The deposition mask of claim 27, wherein a diameter of each of the pattern holes in the first and second arrangement structures ranges from about 17 μm to about 22 μm.

### Claim 30 (depends on 27)

The deposition mask of claim 27, wherein the pattern holes in the second arrangement structure form at least two rows.