# US 10,873,022 B2 · Magnetic element

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- Number: US 10,873,022 B2
- Document ID: US10873022B2
- Status: Granted
- Kind: B2
- Application number: 16/815,448
- Filed: 2020-03-11
- Published: 2020-07-09
- Granted: 2020-12-22
- Earliest claimed: 2011-08-03
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Kazutaka Yamane; Masanori Hosomi; Hiroyuki Ohmori; Kazuhiro Bessho; Yutaka Higo; Tetsuya Asayama; Hiroyuki Uchida
- Web page: https://patentgrep.com/patent/US10873022B2

## CPC

- H10N 50/10: Magnetoresistive devices
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1659: {Cell access}
- G11C 11/1675: {Writing or programming circuits or methods}
- H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
- H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B 61/22: {of the field-effect transistor [FET] type}
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- G11C 11/02: using magnetic elements
- G11C 11/5607: {using magnetic storage elements}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

## Claims

### Claim 1

A magnetic element comprising:
a first layer having a transverse length that is approximately 45 nm or less, the first layer including a magnetization state that is configured to be changed;
an intermediate layer being contact with the first layer, the intermediate layer including a non-magnetic material; and
a second layer including a fixed magnetization,
a conductive oxide layer provided on the first layer,
wherein the intermediate layer is provided between the first layer and the second layer.

### Claim 2 (depends on 1)

The magnetic element of claim 1, wherein the non-magnetic material includes MgO.

### Claim 3 (depends on 1)

The magnetic element of claim 1, wherein the first layer has a volume that is approximately 1,950 nm3 or less.

### Claim 4 (depends on 1)

The magnetic element of claim 1, wherein the first layer includes a first ferromagnetic material.

### Claim 5 (depends on 4)

The magnetic element of claim 4, wherein the first ferromagnetic material includes Co, Fe, and B.

### Claim 6 (depends on 5)

The magnetic element of claim 5, wherein the first layer includes a single layer of the first ferromagnetic material.

### Claim 7 (depends on 6)

The magnetic element of claim 6, wherein the single layer of the first ferromagnetic material has a thickness of 1.5 nm or less.

### Claim 8 (depends on 5)

The magnetic element of claim 5, wherein the first layer includes a plurality of layers of the first ferromagnetic material.

### Claim 9 (depends on 8)

The magnetic element of claim 8, wherein at least one of the plurality layers of the first ferromagnetic material has a thickness of 1.5 nm or less.

### Claim 10 (depends on 5)

The magnetic element of claim 5, further comprising a cap layer provided on the first layer.

### Claim 11 (depends on 10)

The magnetic element of claim 10, wherein the cap layer includes a Ru layer.

### Claim 12 (depends on 11)

The magnetic element of claim 11, wherein the cap layer further includes a Ta layer.

### Claim 13 (depends on 12)

The magnetic element of claim 12, wherein the Ru layer is between the Ta layer and the first layer.

### Claim 14 (depends on 13)

The magnetic element of claim 13, wherein the second layer includes a second ferromagnetic material.

### Claim 15 (depends on 14)

The magnetic element of claim 14, wherein the second ferromagnetic material includes Co and Fe.

### Claim 16 (depends on 15)

The magnetic element of claim 15, wherein the second layer includes Ru.

### Claim 17 (depends on 1)

The magnetic element of claim 1, wherein the first layer has a transverse length that is approximately 40 nm or less.

### Claim 18 (depends on 1)

The magnetic element of claim 1, wherein the first layer has a transverse length that is approximately 30 nm or less.

### Claim 19 (depends on 1)

The magnetic element of claim 1, wherein the first layer has a volume that is approximately 2,390 nm3 or less.

### Claim 20

A storage device comprising:
at least two lines that intersect with each other; and
a magnetic element,
wherein the magnetic element includes:
a first layer having a transverse length that is approximately 45 nm or less, the first layer including a magnetization state that is configured to be changed;
an intermediate layer being contact with the first layer, the intermediate layer including a non-magnetic material; and
a second layer including a fixed magnetization,
a conductive oxide layer provided on the first layer,
wherein the intermediate layer is provided between the first layer and the second layer.