# US 10,873,021 B2 · Magnetic device and manufacturing method of magnetic device

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- Number: US 10,873,021 B2
- Document ID: US10873021B2
- Status: Granted
- Kind: B2
- Application number: 16/123,846
- Filed: 2018-09-06
- Published: 2019-09-26
- Granted: 2020-12-22
- Earliest claimed: 2018-03-20
- Assignees: Toshiba Memory Corporation; SK hynix Inc.
- Applicants: Toshiba Memory Corporation; SK Hynix Inc.
- Inventors: Young Min Eeh; Daisuke Watanabe; Jae-Hyoung Lee; Toshihiko Nagase; Kazuya Sawada; Tadaaki Oikawa; Kenichi Yoshino; Taiga Isoda
- Web page: https://patentgrep.com/patent/US10873021B2

## CPC

- H10N 50/80: Constructional details
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H10B 61/22: {of the field-effect transistor [FET] type}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- G11C 11/165: {Auxiliary circuits}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

## Claims

### Claim 1

A magnetic device comprising a magnetoresistive effect element, the magnetoresistive effect element including:
a first ferromagnet;
a conductor;
an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element;
a second ferromagnet; and
a seed material provided between the first ferromagnet and the second ferromagnet,
wherein the first ferromagnet is sandwiched between the seed material and the oxide.

### Claim 2 (depends on 1)

The device of claim 1, wherein the rare-earth element in the first oxide includes at least one of scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

### Claim 3 (depends on 2)

The device of claim 2, wherein the oxide further includes at least one of boron (B), phosphorus (P), carbon (C), aluminum (Al), silicon (Si), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), hafnium (Hf), and titanium (Ti).

### Claim 4 (depends on 1)

The device of claim 1, wherein the element in the second oxide includes at least one of sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), calcium (Ca), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), strontium (Sr), zirconium (Zr), niobium (Nb), hafnium (Hf), and tantalum (Ta).

### Claim 5 (depends on 4)

The device of claim 4, wherein the oxide further includes at least one of boron (B), phosphorus (P), carbon (C), aluminum (Al), silicon (Si), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), hafnium (Hf), and titanium (Ti).

### Claim 6 (depends on 1)

The device of claim 1, wherein the oxide forms a single layer containing the first oxide and the second oxide.

### Claim 7 (depends on 1)

The device of claim 1, wherein the oxide forms a first layer containing the first oxide and a second layer containing the second oxide.

### Claim 8 (depends on 7)

The device of claim 7, wherein the first layer is provided between the second layer and the first ferromagnet.

### Claim 9 (depends on 7)

The device of claim 7, wherein the second layer is provided between the first layer and the first ferromagnet.

### Claim 10 (depends on 1)

The device of claim 1, wherein the seed material includes at least one of magnesium oxide (MgO), aluminum oxide (AlO), zinc oxide (ZnO), titanium oxide (TiO), and LSMO (lanthanum-strontium-manganese oxide).

### Claim 11 (depends on 1)

The device of claim 1, wherein the conductor includes a non-magnetic material.

### Claim 12 (depends on 1)

The device of claim 1, wherein the conductor includes a ferromagnetic material.

### Claim 13 (depends on 1)

The device of claim 1, further comprising a memory cell that includes the magnetoresistive effect element.