# US 10,873,017 B2 · Thermoelectric generator

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- Number: US 10,873,017 B2
- Document ID: US10873017B2
- Status: Granted
- Kind: B2
- Application number: 16/538,226
- Filed: 2019-08-12
- Published: 2019-11-28
- Granted: 2020-12-22
- Earliest claimed: 2013-04-11
- Assignees: Fujitsu Limited
- Applicants: Fujitsu Limited
- Inventors: John David Baniecki; Masatoshi Ishii; Kazuaki Kurihara
- Web page: https://patentgrep.com/patent/US10873017B2

## CPC

- H10N 10/85: Thermoelectric active materials
- H10N 10/01: Manufacture or treatment
- H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device
- H10N 10/855: comprising compounds containing boron, carbon, oxygen or nitrogen
- H10N 10/857: comprising compositions changing continuously or discontinuously inside the material
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

## Claims

### Claim 1

A method of fabricating a thermoelectric generator, the method comprising:
embedding a structure in a supporting base body, the structure being constituted by a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type and an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter at least including a first perovskite dielectric film containing Sr and Ti and having electric conductivity by being doped to n-type, the first perovskite dielectric film having a conduction band at an energy level higher than a conduction band of the perovskite dielectric substrate, the structure being embedded in the supporting base body in a direction such that a bottom surface of the perovskite dielectric substrate in the structure faces a bottom surface of the supporting base body; and
performing chemical mechanical polishing on the bottom surface of the perovskite dielectric substrate by polishing the bottom surface of the supporting base body together with the structure, to decrease a thickness of a perovskite stack constituted by the perovskite dielectric substrate and the energy filter to a thickness that is not greater than 0.25 mm.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
forming an opening part on a top surface of the supporting base body, the opening part being formed to expose a top surface of the energy filter in the structure; and
forming a first electrode and a second electrode on the bottom surface of the perovskite dielectric substrate and the top surface of the energy filter, respectively.

### Claim 3 (depends on 1)

The method according to claim 1, wherein
the supporting base body is a heat-resistant resin, and
the embedding of the structure in the supporting base body includes
disposing the structure in a mold such that the bottom surface of the perovskite dielectric substrate contacts a bottom surface of the mold, and
injecting the heat-resistant resin in the mold in a state where the heat-resistant resin is fused.

### Claim 4 (depends on 1)

The method according to claim 1, wherein
the performing of the chemical mechanical polishing on the bottom surface of the perovskite dielectric substrate is executed such that a thickness of the perovskite dielectric substrate does not become less than 0.05 mm.