# US 10,873,013 B2 · Passivation for a semiconductor light emitting device

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- Number: US 10,873,013 B2
- Document ID: US10873013B2
- Status: Granted
- Kind: B2
- Application number: 16/142,795
- Filed: 2018-09-26
- Published: 2019-01-24
- Granted: 2020-12-22
- Earliest claimed: 2010-06-07
- Assignees: Lumileds LLC
- Applicants: Lumileds LLC
- Inventors: Frederic Stephane Diana; Kwong-Hin Henry Choy; Qingwei Mo; Serge L. Rudaz; Frank L. Wei; Daniel A. Steigerwald
- Web page: https://patentgrep.com/patent/US10873013B2

## CPC

- H10H 20/856: Reflecting means
- H10H 20/018: {Bonding of wafers}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/8314: {extending at least partially onto an outer side surface of the bodies}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8506: {Containers}
- H10H 20/853: characterised by their shape
- H10H 20/034: {of coatings}
- H10H 20/0362: {of encapsulations}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/852: Encapsulations
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

## Claims

### Claim 1

A device comprising:
a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region, the semiconductor structure divided into a plurality of light-emitting devices (LEDs) separated by a gap between adjacent LEDs of the plurality of LEDs,
each of the plurality of LEDs comprising an n-contact electrically coupled to the n-type region; and
a multilayer stack at least in the gap between the adjacent LEDs, the multilayer stack comprising at least a first layer having a first refractive index and a second layer having a second refractive index.

### Claim 2 (depends on 1)

The device of claim 1, wherein the multilayer stack comprises one of a reflecting layer and a passivating layer.

### Claim 3 (depends on 1)

The device of claim 1, wherein the n-contact is on an exposed portion of the n-type region and the multilayer stack is disposed on top of the exposed portion of the n-type region.

### Claim 4 (depends on 3)

The device of claim 3, further comprising a metal bonding layer coupled to the exposed portion of the n-type region.

### Claim 5 (depends on 1)

The device of claim 1, wherein the multilayer stack comprises at least one of an insulating layer, a dielectric layer, AlN, TiN, SiO2, SiNxOy, SiNx, and Si3N4.

### Claim 6 (depends on 1)

The device of claim 1, further comprising a p-contact on the p-type region and a guard layer on the p-contact.

### Claim 7 (depends on 1)

The device of claim 1, wherein the multilayer stack is configured to prevent contaminants from contacting the semiconductor structure.

### Claim 8 (depends on 1)

The device of claim 1, wherein, for each of the plurality of LEDs, a portion of the n-contact is exposed adjacent the gap, and the multilayer stack is adjacent the exposed portion of the n-contact and adjacent at least one surface of the n-type region.

### Claim 9 (depends on 8)

The device of claim 8, wherein the multilayer stack is in contact with the exposed portion of the n-contact and the at least one surface of the n-type region.

### Claim 10 (depends on 8)

The device of claim 8, wherein the at least one surface is at least one of a side surface and a bottom surface of the n-type region.

### Claim 11 (depends on 1)

The device of claim 1, wherein the gap between the adjacent LEDs is between 1 and 10 microns wide.

### Claim 12 (depends on 11)

The device of claim 11, wherein the gap between the adjacent LEDs is approximately 5 microns wide.

### Claim 13 (depends on 1)

The device of claim 1, wherein the first layer and the second layer comprise a pair of layers, and the multilayer stack comprises a plurality of the pair of layers.

### Claim 14 (depends on 1)

The device of claim 1, wherein the first layer and the second layer comprise materials selected such that the multilayer stacks reflects light from the light-emitting layer incident on the multilayer stack.