# US 10,873,011 B2 · Semiconductor die having a first light-emitting diode and a second light-emitting diode

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- Number: US 10,873,011 B2
- Document ID: US10873011B2
- Status: Granted
- Kind: B2
- Application number: 16/516,369
- Filed: 2019-07-19
- Published: 2020-01-23
- Granted: 2020-12-22
- Earliest claimed: 2018-07-19
- Assignees: Lumileds LLC
- Applicants: Lumileds Holding B.V.
- Inventors: Arjen Van Der Sude; Nicola Pfeffer; Pieter Johannes Quintus Van Voorst Vader; Peter Schmidt
- Web page: https://patentgrep.com/patent/US10873011B2

## CPC

- H10H 20/8513: {having two or more wavelength conversion materials}
- F21K 9/90: Methods of manufacture
- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- H10H 20/0361: {of wavelength conversion means}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR

## Abstract

The invention describes a semiconductor die comprising at least a first light-emitting diode and a second light-emitting diode, wherein the first light-emitting diode comprises a first diode formed in a first die area and a first phosphor layer deposited over the first die area; the second light-emitting diode comprises a second diode and a second phosphor layer deposited over the second die area; the first diode and the second diode are electrically connected in anti-parallel; and wherein the optical properties of the second phosphor layer differ from the optical properties of the first phosphor layer.

## Claims

### Claim 1

A semiconductor die comprising: at least a first light-emitting diode that comprises a first diode in a first die area and a first phosphor layer over the first die area, the first light-emitting diode configured to emit electromagnetic radiation in a first wavelength range; and a second light-emitting diode that comprises a second diode in a second die area and a second phosphor layer over the second die area, the second light-emitting diode configured to emit electromagnetic radiation in a second wavelength range that is different from the first wavelength range by at least 200 nm, the first diode and the second diode being electrically connected in parallel with their polarities reversed, and the second phosphor layer and the first phosphor layer having different compositions.

### Claim 2 (depends on 1)

The semiconductor die according to claim 1, wherein the first diode and the second diode are each a transient-voltage suppressor for the other of the second diode and the first diode.

### Claim 3 (depends on 1)

The semiconductor die according to claim 1, wherein the at least first light-emitting diode emits electromagnetic radiation in a visible spectrum.

### Claim 4 (depends on 3)

The semiconductor die according to claim 3, wherein the first phosphor layer of the at least first light-emitting diode comprises any of YAG:Ce; (Y,Lu)AG:Ce and (Ba,Sr)2Si5N8:Eu (BSSN); Sr[LiAl3N4]:Eu2+; Eu-activated Ba—Mg-Aluminate; ZnS:Ag; Sr3MgSi2O8:Eu; Y3−xAl5−yGayO12:Cex for which 0.002<x<0.12 and 0≤Y≤0.4; Sr1−x−yCaySiAlN3:Eux for which 0.001<x<0.03 and 0≤y≤1.

### Claim 5 (depends on 1)

The semiconductor die according to claim 1, wherein both the first light-emitting diode and the second light-emitting diode emit electromagnetic radiation in a visible spectrum.

### Claim 6 (depends on 4)

The semiconductor die according to claim 4, wherein the second light-emitting diode emits electromagnetic radiation in an infrared range.

### Claim 7 (depends on 6)

The semiconductor die according to claim 6, wherein the second phosphor layer of the second light-emitting diode comprises any of RE3Ga5−x−yAxSiO14:Cry (RE=La, Nd, Gd, Yb, Tm; A=Al, Sc), where 0≤x≤1 and 0.005≤y≤0.1; Gd3−xRExSc2-y-zLnyGa3-wAlwO12:Crz (Ln=Lu, Y, Yb, Tm; RE=La, Nd), where 0≤x≤3; 0≤y≤1.5; 0≤z≤0.3; and 0≤w≤2; AAEM1−xF6:Crx (A=Li, Cu; AE=Sr, Ca; M=Al, Ga, Sc) where 0.005≤x≤0.2; A2−x(WO4)3:Crx (A=Al, Ga, Sc, Lu, Yb) where 0.003≤x≤0.5; Sc1−x−yAxBO3:Cry (A=Ga, Al, In, Lu, Y, Yb) where 0≤x≤1 and 0.005≤y≤0.1.

### Claim 8 (depends on 7)

The semiconductor die according to claim 7, wherein the first light-emitting diode and the second light-emitting diode emit electromagnetic radiation in a red infrared range.

### Claim 9 (depends on 1)

The semiconductor die according to claim 1, wherein the different wavelength ranges differ by at least 250 nm.

### Claim 10

A method of manufacturing a semiconductor die, comprising: forming a first diode in a first die area and forming a second diode in a second die area such that the first diode and the second diode are connected in parallel with their polarities reversed; depositing a first phosphor layer over the first die area to complete a first light-emitting diode such that the first light-emitting diode is configured to emit electromagnetic radiation in a first wavelength range; and depositing a second phosphor layer over the second die area to complete a second light-emitting diode such that the second light-emitting diode is configured to emit electromagnetic radiation in a second wavelength range different from the first wavelength range by at least 200 nm, and the second phosphor layer and the first phosphor layer having different compositions.

### Claim 11 (depends on 10)

The method according to claim 10, wherein the first die area is formed to comprise at least 50% of a total die area.

### Claim 12 (depends on 10)

The method according to claim 10, further comprising forming a separation layer between the first light-emitting diode and the second light-emitting diode.

### Claim 13 (depends on 10)

The method according to claim 10, wherein the first die area is formed to comprise at least 75% of a total die area.

### Claim 14

An electronic device comprising: an imaging module that comprises a semiconductor die, the semiconductor die including at least a first light-emitting diode and a second light emitting diode, the first light-emitting diode including a first diode in a first die area and a first phosphor layer over the first die area, and the second light-emitting diode including a second diode in a second die area and a second phosphor layer over the second die area, the first light-emitting diode and the second light-emitting diode configured to emit electromagnetic radiation in wavelength ranges that differ from each other by at least 200 nm, the first diode and the second diode being electrically connected in parallel with their polarities reversed, and the second phosphor layer and the first phosphor layer having different compositions.

### Claim 15 (depends on 14)

The electronic device according to claim 14, wherein the semiconductor die is a part of a camera flash arrangement of the imaging module.