# US 10,873,005 B2 · Semiconductor element and semiconductor element package comprising same

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- Number: US 10,873,005 B2
- Document ID: US10873005B2
- Status: Granted
- Kind: B2
- Application number: 16/463,766
- Filed: 2017-11-24
- Published: 2019-09-12
- Granted: 2020-12-22
- Earliest claimed: 2016-11-24
- Assignees: LG Innotek Co., Ltd.
- Applicants: LG Innotek Co., Ltd.
- Inventors: Youn Joon Sung; Yong Gyeong Lee; Min Sung Kim; Su Ik Park
- Web page: https://patentgrep.com/patent/US10873005B2

## CPC

- H10H 20/8162: {Current-blocking structures}
- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/83: Electrodes
- H10H 20/85: Packages
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.

## Claims

### Claim 1

A semiconductor element comprising:
a first conductive semiconductor layer;
a second conductive semiconductor layer;
an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and
a blocking layer disposed between the second conductive semiconductor layer and the active layer,
wherein the first conductive semiconductor layer has a cross-sectional area which decreases in a first direction,
the blocking layer has a cross-sectional area which increases in the first direction,
the first direction is a direction from the first conductive semiconductor layer toward the second conductive semiconductor layer,
wherein an aluminum composition of a region, which is close to the active layer, of the blocking layer is higher than an aluminum composition of a region, which is close to the second conductive semiconductor layer, of the blocking layer, and
wherein the active layer is to generate ultraviolet light.

### Claim 2 (depends on 1)

The semiconductor element of claim 1, wherein the active layer and the blocking layer include AlGaN.

### Claim 3 (depends on 1)

The semiconductor element of claim 1, wherein the blocking layer includes a stepped portion formed by etching a side surface of the blocking layer so that the active layer is exposed.

### Claim 4 (depends on 1)

The semiconductor element of claim 1, wherein a side surface of the blocking layer includes a curved line.

### Claim 5 (depends on 1)

The semiconductor element of claim 1, wherein a side surface of the blocking layer includes a protrusion.

### Claim 6 (depends on 1)

The semiconductor element of claim 1, wherein:
the blocking layer includes a first blocking layer, a second blocking layer, and a third blocking layer; and
aluminum compositions of the first blocking layer and the third blocking layer are higher than an aluminum composition of the second blocking layer.

### Claim 7 (depends on 1)

The semiconductor element of claim 1, wherein:
an angle between a side surface of the blocking layer and a horizontal axis ranges from 55° to 80°; and
the horizontal axis is perpendicular to the first direction.

### Claim 8 (depends on 1)

The semiconductor element of claim 1, wherein the second conductive semiconductor layer includes a region in which an area increases in the first direction.

### Claim 9 (depends on 1)

The semiconductor element of claim 1, further comprising a plurality of recesses penetrate the second conductive semiconductor layer and the active layer and penetrate up to a portion of the first conductive semiconductor layer.

### Claim 10 (depends on 9)

The semiconductor element of claim 9, further comprising:
a first electrode disposed in the plurality of recesses;
a second electrode disposed under the second conductive semiconductor layer;
a first conductive layer electrically connected to the first electrode; and
a second conductive layer electrically connected to the second electrode.

### Claim 11 (depends on 10)

The semiconductor element of claim 10, further comprising:
a first insulating layer disposed in the plurality of recesses; and
a second insulating layer disposed between the first conductive layer and the second conductive layer.

### Claim 12 (depends on 11)

The semiconductor element of claim 11, further comprising a conductive substrate disposed under the first conductive layer.

### Claim 13

A semiconductor element package comprising:
a housing; and
a semiconductor element disposed in the housing,
wherein the semiconductor element includes a first conductive semiconductor layer,
a second conductive semiconductor layer,
an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and
a blocking layer disposed between the second conductive semiconductor layer and the active layer,
wherein the first conductive semiconductor layer has a cross-sectional area which decreases in a first direction,
the blocking layer has a cross-sectional area which increases in the first direction,
the first direction is a direction from the first conductive semiconductor layer toward the second conductive semiconductor layer,
wherein an aluminum composition of a region, which is close to the active layer, of the blocking layer is higher than an aluminum composition of a region, which is close to the second conductive semiconductor layer, of the blocking layer, and
wherein the active layer is to generate ultraviolet light.

### Claim 14 (depends on 13)

The semiconductor element package of claim 13, wherein the active layer and the blocking layer include AlGaN.

### Claim 15 (depends on 13)

The semiconductor element package of claim 13, wherein the blocking layer includes a stepped portion formed by etching a side surface of the blocking layer so that the active layer is exposed.

### Claim 16 (depends on 13)

The semiconductor element package of claim 13, wherein:
the blocking layer includes a first blocking layer, a second blocking layer, and a third blocking layer; and
aluminum compositions of the first blocking layer and the third blocking layer are higher than an aluminum composition of the second blocking layer.

### Claim 17 (depends on 13)

The semiconductor element package of claim 13, wherein:
an angle between a side surface of the blocking layer and a horizontal axis ranges from 55° to 80°; and
the horizontal axis is perpendicular to the first direction.