# US 10,873,004 B2 · Light emitting device for light amplification using graphene quantum dot and method for producing the device

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- Number: US 10,873,004 B2
- Document ID: US10873004B2
- Status: Granted
- Kind: B2
- Application number: 16/375,872
- Filed: 2019-04-05
- Published: 2019-10-10
- Granted: 2020-12-22
- Earliest claimed: 2018-04-06
- Assignees: Sangmyung University Cheonan Council for Industry- Academic Cooperation Foundation; University-Industry Cooperation Group of Kyung Hee University
- Applicants: Sangmyung University Cheonan Council for Industry-Academic Cooperation Foundation; University-Industry Cooperation Group Of Kyung Hee University
- Inventors: Sung Won Hwang; Suk Ho Choi
- Web page: https://patentgrep.com/patent/US10873004B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/01: Manufacture or treatment
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/818: within the light-emitting regions
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/822: Materials of the light-emitting regions
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/034: {of coatings}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present invention relates to a light-emitting device for light amplification using graphene quantum dots and a method of manufacturing the same, which includes a first conductive semiconductor base layer; a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer sequentially formed from inside to outside; and a graphene quantum dot coating layer disposed on one or both of a surface and an interior of the nanowire, thereby providing a light-emitting device which maximizes light extraction and light amplification.

## Claims

### Claim 1

A light-emitting device comprising:
a first conductive semiconductor base layer;
a plurality of nanowires disposed on the first conductive semiconductor base layer and including a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer which are sequentially formed from inside to outside; and
a graphene quantum dot coating layer disposed on the first conductive semiconductor core, on the active layer, and on the second conductive semiconductor layer, respectively.

### Claim 2 (depends on 1)

The light-emitting device of claim 1, wherein an average size of graphene quantum dots of the graphene quantum dot coating layer is 100 nm or less.

### Claim 3 (depends on 1)

The light-emitting device of claim 1, wherein 90% or more of total graphene quantum dots of the graphene quantum dot coating layer have a uniform particle size.

### Claim 4 (depends on 1)

The light-emitting device of claim 1, wherein the first conductive semiconductor base layer and the first conductive semiconductor core include n-GaN.

### Claim 5 (depends on 1)

The light-emitting device of claim 1, wherein the second conductive semiconductor layer includes p-GaN.

### Claim 6 (depends on 1)

The light-emitting device of claim 1, wherein the active layer has a multi-quantum-well structure.

### Claim 7 (depends on 6)

The light-emitting device of claim 6, wherein the graphene quantum dot coating layer is disposed in the multi-quantum-well structure.