# US 10,872,998 B2 · Chip size package, method of manufacturing the same, electronic device, and endoscope > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,998 B2 - Document ID: US10872998B2 - Status: Granted - Kind: B2 - Application number: 16/085,695 - Filed: 2017-03-10 - Published: 2019-03-07 - Granted: 2020-12-22 - Earliest claimed: 2016-03-24 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yoshiaki Masuda - Web page: https://patentgrep.com/patent/US10872998B2 ## CPC - H10F 55/18: {wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection} - A61B 1/051: {Details of CCD assembly} - H04N 23/52: Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements - H04N 23/54: Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 23/56: provided with illuminating means - H04N 25/70: SSIS architectures; Circuits associated therewith - H10F 39/026: {Wafer-level processing} - H10F 39/182: {Colour image sensors} - H10F 39/804: {Containers or encapsulations} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10W 90/00: Package configurations - H04N 23/555: {for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes} - H10H 20/8506: {Containers} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract The present disclosure relates to a chip size package that enables realization of a compact chip size package in which a solid-state imaging element and a light emitting element are integrated, a method of manufacturing the same, an electronic device, and an endoscope. The chip size package which is an aspect of the present disclosure is provided with a solid-state imaging element which generates a pixel signal according to incident light and a light emitting element which outputs irradiation light according to voltage applied in which the solid-state imaging element and the light emitting element are integrated. The present disclosure is applicable to, for example, a compact electronic device, a medical endoscope, and the like. ## Claims ### Claim 1 A chip size package, comprising: a solid-state imaging element configured to generate a pixel signal based on incident light; and a light emitting element configured to output irradiation light based on voltage applied, wherein the solid-state imaging element is integrated with the light emitting element, the light emitting element includes sapphire glass as a support substrate, the sapphire glass includes a light shielding groove, the light shielding groove extends from a top surface of the sapphire glass to a bottom surface of the sapphire glass, and the light shielding groove in the sapphire glass is at a boundary between the light emitting element and the solid-state imaging element. ### Claim 2 (depends on 1) The chip size package according to claim 1, wherein the sapphire glass further serves as a cover glass of the solid-state imaging element. ### Claim 3 (depends on 1) The chip size package according to claim 1, wherein the solid-state imaging element comprises a stack of a first layer and a second layer, the first layer comprises a pixel array configured to execute photoelectric conversion, the second layer comprises a signal processing circuit and an I/O circuit, the signal processing circuit is configured to process the pixel signal converted by the pixel array, and the signal processing circuit and the I/O circuit in the second layer are arranged so as not to protrude in a lateral direction from a region occupied by the pixel array. ### Claim 4 (depends on 3) The chip size package according to claim 3, further comprising a first substrate on which the light emitting element is formed, and a second substrate on which the solid-state imaging element is formed, wherein the first substrate is bonded to the second substrate by a wafer level chip size package (WCSP) manufacturing method, and the first substrate and the second substrate are singulated by a singlulation process. ### Claim 5 (depends on 3) The chip size package according to claim 3, wherein the solid-state imaging element is mounted on a substrate on which the light emitting element is formed, the solid-state imaging element is mounted by a chip on wafer (COW) manufacturing method, and the substrate is singulated by a singlulation process. ### Claim 6 (depends on 5) The chip size package according to claim 5, wherein the solid-state imaging element mounted on the substrate by the COW manufacturing method is a chip size package (CSP) solid-state imaging element, and the CSP solid-state imaging element comprises a solder ball as a connection terminal. ### Claim 7 (depends on 5) The chip size package according to claim 5, further comprising a wire connected as a connection terminal to the solid-state imaging element mounted on the substrate on which the light emitting element is formed by the COW manufacturing method. ### Claim 8 (depends on 3) The chip size package according to claim 3, wherein the light emitting element is mounted on a substrate on which the solid-state imaging element is formed by a chip on wafer (COW) manufacturing method, and the substrate is singulated by a singlulation process. ### Claim 9 (depends on 3) The chip size package according to claim 3, wherein the light emitting element is one of an LED element or a laser element. ### Claim 10 (depends on 3) The chip size package according to claim 3, wherein the sapphire glass comprises a moth-eye processed portion configured to adjust directivity of the irradiation light output from the light emitting element. ### Claim 11 (depends on 3) The chip size package according to claim 3, further comprising a light shielding wall at the boundary between the light emitting element and the solid-state imaging element. ### Claim 12 A method of manufacturing a chip size package, the method comprising: applying sealing resin to a second substrate on which a plurality of solid-state imaging elements is formed; bonding a first substrate on which a plurality of light emitting elements is formed to the second substrate to which the sealing resin is applied, wherein the first substrate is bonded to the second substrate by a wafer level chip size package (WCSP) manufacturing method; and singulating the bonded first substrate and the second substrate, wherein the chip size package includes: a solid-state imaging element of the plurality of solid-state imaging elements configured to generate a pixel signal according to incident light; and a light emitting element of the plurality of light emitting elements configured to output irradiation light according to voltage applied, wherein the solid-state imaging element is integrated with the light emitting element. ### Claim 13 An electronic device, comprising: a chip size package that includes a solid-state imaging element and a light emitting element, wherein the solid-state imaging element is integrated with the light emitting element, the solid-state imaging element is configured to generate pixel signal based on incident light, the light emitting element is configured to output irradiation light based on voltage applied, the light emitting element includes sapphire glass as a support substrate, the sapphire glass includes a light shielding groove, the light shielding groove extends from a top surface of the sapphire glass to a bottom surface of the sapphire glass, and the light shielding groove in the sapphire glass is at a boundary between the light emitting element and the solid-state imaging element. ### Claim 14 An endoscope, comprising: a chip size package that includes a solid-state imaging element and a light emitting element, wherein the solid-state imaging element is integrated with the light emitting element, the solid-state imaging element is configured to generate a pixel signal based on incident light, the light emitting element is configured to output irradiation light based on voltage applied, the light emitting element includes sapphire glass as a support substrate, the sapphire glass includes a light shielding groove, the light shielding groove extends from a top surface of the sapphire glass to a bottom surface of the sapphire glass, and the light shielding groove in the sapphire glass is at a boundary between the light emitting element and the solid-state imaging element.