# US 10,872,986 B2 · Solar cell and method for manufacturing solar cell > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,986 B2 - Document ID: US10872986B2 - Status: Granted - Kind: B2 - Application number: 15/657,987 - Filed: 2017-07-24 - Published: 2018-02-08 - Granted: 2020-12-22 - Earliest claimed: 2016-08-08 - Assignees: Panasonic Intellectual Property Management Co., Ltd. - Applicants: Panasonic Intellectual Property Management Co., Ltd. - Inventors: Kenta Matsuyama - Web page: https://patentgrep.com/patent/US10872986B2 ## CPC - H10F 77/703: {of the semiconductor bodies, e.g. textured active layers} - H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells - H10F 71/103: {including only Group IV materials} - H10F 71/121: {The active layers comprising only Group IV materials} - H10F 77/1223: characterised by the dopants - H10F 77/1662: {including only Group IV materials} - H10F 77/148: {Shapes of potential barriers} - Y02E 10/50: Photovoltaic [PV] energy - Y02E 10/547: Monocrystalline silicon PV cells - Y02E 10/548: Amorphous silicon PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A solar cell is made which has a first conduction-type crystalline silicon substrate having a texture provided on the surface, and an i-type amorphous silicon layer located on the surface of the crystalline silicon substrate, wherein the texture has a larger radius of curvature R1 of root parts thereof than the radius of curvature R2 of peak parts thereof. The crystalline silicon substrate has a first conduction-type highly-doped region containing a first conduction-type dopant on the surface thereof, and the dopant concentration in the first conduction-type highly-doped region is higher than that in the center in the thickness direction of the crystalline silicon substrate. ## Claims ### Claim 1 A solar cell, comprising: an n-type crystalline silicon substrate having a texture provided on a principal surface thereof; an i-type amorphous silicon layer located on the principal surface of the crystalline silicon substrate; a p-type amorphous silicon layer located on the i-type amorphous silicon layer; a transparent conductive layer located on the p-type amorphous silicon layer; and a collector electrode located on the transparent conductive layer, wherein the crystalline silicon substrate has an n-type highly-doped region having an n-type dopant, the n-type highly-doped region is located between the i-type amorphous silicon layer and the crystalline silicon substrate, the n-type highly-doped region has a higher dopant concentration than a dopant concentration in a central part in the thickness direction of the crystalline silicon substrate, the n-type highly doped region has a larger thickness of a root part of the texture than a thickness of a peak part thereof; the i-type amorphous silicon layer is located in direct contact with the n-type highly-doped region of the n-type crystalline silicon substrate on the thickness direction of the crystalline silicon substrate, the p-type amorphous silicon layer is located in direct contact with the i-type amorphous silicon on the thickness direction of the crystalline silicon substrate, the transparent conductive layer is located in direct contact with the p-type amorphous silicon layer on the thickness direction of the crystalline silicon substrate, the collector electrode is located in direct contact with the transparent conductive layer on the thickness direction of the crystalline silicon substrate, wherein the n-type highly-doped region is provided on an entirety of the principal surface of the crystalline silicon substrate, and the root part and the peak part of the texture in the n-type highly-doped region are covered with the i-type amorphous silicon layer, the p-type amorphous silicon layer, and the transparent conductive layer. ### Claim 2 (depends on 1) The solar cell according to claim 1, wherein the texture has a larger radius of curvature of the root part thereof than a radius of curvature of the peak part thereof. ### Claim 3 (depends on 1) The solar cell according to claim 1, wherein the principal surface is on a light incident surface side, and the n-type highly-doped region is provided on the light incident surface side of the crystalline silicon substrate. ### Claim 4 (depends on 2) The solar cell according to claim 2, wherein the principal surface is on a light incident surface side, and the n-type highly-doped region is provided on the light incident surface side of the crystalline silicon substrate. ### Claim 5 (depends on 1) The solar cell according to claim 1, wherein the principal surface is on a rear surface side, and the n-type highly-doped region is provided on the rear surface side of the crystalline silicon substrate. ### Claim 6 (depends on 2) The solar cell according to claim 2, wherein the principal surface is on a rear surface side, and the n-type highly-doped region is provided on the rear surface side of the crystalline silicon substrate. ### Claim 7 A method for manufacturing a solar cell, comprising: a first step of forming a texture on a principal surface of an n-type crystalline silicon substrate; a second step of diffusing an n-type dopant on the principal surface of the silicon substrate having the texture formed thereon so that the principal surface has a n-type dopant concentration region higher than an n-type dopant concentration in a central part in the thickness direction of the silicon substrate; and a third step of forming an i-type amorphous silicon layer and a p-type amorphous silicon layer in this order so as to directly overlap the higher n-type dopant concentration region of the principal surface of the silicon substrate having the texture formed thereon, wherein, in the first step, the texture is formed so that a root part of the texture has a larger radius of curvature than a radius of curvature of a peak part thereof, in the second step, the n-type dopant on the principal surface of the silicon substrate is diffusing so that the n-type dopant on the principal surface of the silicon substrate has a larger thickness of the root part of the texture than a thickness of the peak part thereof, in the third step, the i-type amorphous silicon layer and p-type amorphous silicon layer are formed at the center of the principal surface of the n-type crystalline silicon substrate, wherein the higher n-type dopant concentration region is provided on an entirety of the principal surface of the crystalline silicon substrate, and the root part and the peak part of the texture in the higher n-type dopant concentration region are covered with the i-type amorphous silicon layer, the p-type amorphous silicon layer, and a transparent conductive layer. ### Claim 8 (depends on 1) The solar cell according to claim 1, wherein the crystalline silicon substrate has another principal surface opposite to the principal surface, and comprises another i-type amorphous silicon layer located on the other principal surface of the crystalline silicon substrate, and an n-type amorphous silicon layer located on the other i-type amorphous silicon layer. ### Claim 9 A solar cell, comprising: an n-type crystalline silicon substrate having a texture provided on a principal surface thereof; an i-type amorphous silicon layer located on the principal surface of the crystalline silicon substrate; a p-type amorphous silicon layer located on the i-type amorphous silicon layer; a transparent conductive layer located on the p-type amorphous silicon layer; and a collector electrode located on the transparent conductive layer, wherein the crystalline silicon substrate has an n-type highly-doped region having n-type dopant, the n-type highly-doped region is located between the i-type amorphous silicon layer and the crystalline silicon substrate, the n-type highly-doped region has a higher dopant concentration than a dopant concentration in a central part in the thickness direction of the crystalline silicon substrate, the n-type highly doped region has a larger thickness of a root part of the texture than a thickness of a peak part thereof, the n-type silicon substrate, the i-type amorphous silicon layer, the p-type amorphous silicon layer and the transparent conductive layer are located in this order in the thickness direction of the crystalline silicon substrate at the center of the principal surface of the n-type crystalline silicon substrate, wherein the n-type highly-doped region is provided on an entirety of the principal surface of the crystalline silicon substrate, and the root part and the peak part of the texture in the n-type highly-doped region are covered with the i-type amorphous silicon layer, the p-type amorphous silicon layer, and the transparent conductive layer. ### Claim 10 (depends on 9) The solar cell according to claim 9, wherein the texture has a large radius of curvature of the root part thereof than a radius of curvature of the peak part thereof. ### Claim 11 (depends on 9) The solar cell according to claim 9, wherein the principal surface is on a light incident surface side, and the n-type highly-doped region is provided on the light incident surface side of the crystalline silicon substrate. ### Claim 12 (depends on 10) The solar cell according to claim 10, wherein the principal surface is on a light incident surface side and the n-type highly-doped region is provided on the light incident surface side of the crystalline silicon substrate. ### Claim 13 (depends on 9) The solar cell according to claim 9, wherein the principal surface is on a rear surface side, and the n-type highly-doped region is provided on the rear surface side of the crystalline silicon substrate. ### Claim 14 (depends on 10) The solar cell according to claim 10, wherein the principle surface is on a rear surface side, and the n-type highly-doped region is provided on the rear surface side of the crystalline silicon substrate. ### Claim 15 (depends on 1) The solar cell according to claim 1, wherein the i-type amorphous silicon layer, the p-type amorphous silicon layer, and the transparent conductive layer directly overlay an entirety of the n-type highly-doped region.