# US 10,872,947 B2 · Display device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,947 B2 - Document ID: US10872947B2 - Status: Granted - Kind: B2 - Application number: 16/856,139 - Filed: 2020-04-23 - Published: 2020-08-06 - Granted: 2020-12-22 - Earliest claimed: 2013-12-02 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Masakatsu Ohno; Hiroki Adachi; Satoru Idojiri; Koichi Takeshima - Web page: https://patentgrep.com/patent/US10872947B2 ## CPC - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - B23K 26/04: Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light - B23K 26/0617: {and with spots spaced along the common axis} - B23K 26/0622: by shaping pulses - B23K 26/0643: {comprising mirrors} - B23K 26/0648: {comprising lenses} - B23K 26/083: {Devices involving movement of the workpiece in at least one axial direction} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6758: {characterised by the insulating substrates} - H10D 62/80: characterised by the materials - H10D 86/0214: {using temporary substrates} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/38: comprising colour filters or colour changing media [CCM] - H10K 59/8722: {Peripheral sealing arrangements, e.g. adhesives, sealants} - H10K 71/421: {using coherent electromagnetic radiation, e.g. laser annealing} - H10K 71/50: Forming devices by joining two substrates together, e.g. lamination techniques - H10K 71/80: using temporary substrates - H10K 77/111: {Flexible substrates} - H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10K 59/12: Active-matrix OLED [AMOLED] displays - H10K 59/1201: {Manufacture or treatment} - H10K 59/8792: {comprising light absorbing layers, e.g. black layers} - H10K 2102/311: {Flexible OLED} - H10K 2102/351: {Thickness} - H10N 30/074: by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer. ## Claims ### Claim 1 A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising: a laser device outputting a laser light; an optical system extending the laser light; a mirror reflecting the laser light; and a lens forming a linear beam by condensing the laser light, wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward. ### Claim 2 (depends on 1) The linear beam irradiation apparatus according to claim 1, wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam. ### Claim 3 (depends on 1) The linear beam irradiation apparatus according to claim 1, wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam. ### Claim 4 (depends on 1) The linear beam irradiation apparatus according to claim 1, wherein the linear beam is equal or longer than one side of the substrate. ### Claim 5 (depends on 1) The linear beam irradiation apparatus according to claim 1, wherein a wavelength of the laser light is 308 nm or longer. ### Claim 6 A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising: a laser device including a plurality of laser oscillators; an optical system synthesizing a laser light output from each of the plurality of laser oscillators and extending the laser light; a mirror reflecting the laser light; and a lens forming a linear beam by condensing the laser light, wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward. ### Claim 7 (depends on 6) The linear beam irradiation apparatus according to claim 6, wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam. ### Claim 8 (depends on 6) The linear beam irradiation apparatus according to claim 6, wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam. ### Claim 9 (depends on 6) The linear beam irradiation apparatus according to claim 6, wherein the linear beam is equal or longer than one side of the substrate. ### Claim 10 (depends on 6) The linear beam irradiation apparatus according to claim 6, wherein a wavelength of the laser light is 308 nm or longer. ### Claim 11 A linear beam irradiation apparatus for peeling an element layer provided over an upper surface side of a substrate from the substrate, the linear beam irradiation apparatus comprising: a laser device outputting a laser light; an optical system extending the laser light; a mirror reflecting the laser light; and a lens forming a linear beam by condensing the laser light, wherein the substrate and the element layer are configured to be moved below the lens while a lower surface side of the substrate is faced upward and the substrate is kept flat. ### Claim 12 (depends on 11) The linear beam irradiation apparatus according to claim 11, wherein the substrate and the element layer are configured to be moved so that an entire part or a necessary part of the substrate is irradiated with the linear beam. ### Claim 13 (depends on 11) The linear beam irradiation apparatus according to claim 11, wherein the substrate and the element layer are configured to be moved in parallel with a short axis direction of the linear beam. ### Claim 14 (depends on 11) The linear beam irradiation apparatus according to claim 11, wherein the linear beam is equal or longer than one side of the substrate. ### Claim 15 (depends on 11) The linear beam irradiation apparatus according to claim 11, wherein a wavelength of the laser light is 308 nm or longer.