# US 10,872,913 B2 · CMOS pixel, image sensor, and camera and method for reading out a CMOS pixel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,913 B2 - Document ID: US10872913B2 - Status: Granted - Kind: B2 - Application number: 16/316,937 - Filed: 2017-07-10 - Published: 2019-09-26 - Granted: 2020-12-22 - Earliest claimed: 2016-07-13 - Assignees: Robert Bosch GmbH - Applicants: Robert Bosch GmbH - Inventors: Steffen Fritz - Web page: https://patentgrep.com/patent/US10872913B2 ## CPC - H10F 39/8033: {Photosensitive area} - G02B 5/0205: {characterised by the diffusing properties} - H04N 25/585: with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes - H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract CMOS pixel having a dual conversion gain readout circuit, including at least one first photodiode (PD1), a diffusion region (FD) having a first capacitance (CFD) for accommodating a charge of the at least one first photodiode (PD1), the dual conversion gain readout circuit being designed to read out the charge of the diffusion region (FD) with the aid of a first amplification factor and with the aid of a second amplification factor, the CMOS pixel including at least one second photodiode (PD2), the diffusion region (FD) furthermore being designed to accommodate a charge of the at least one second photodiode (PD2), and the dual conversion gain readout circuit being designed to read out the charge of the diffusion region (FD) with the aid of at least one third amplification factor and at least one fourth amplification factor. ## Claims ### Claim 1 A CMOS pixel, comprising: a dual conversion gain readout circuit; at least one first photodiode; a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with a second amplification factor; and at least one second photodiode; wherein the diffusion region accommodates a charge of the at least one second photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with at least one third amplification factor and at least one fourth amplification factor, and wherein the dual conversion gain readout circuit is configured to form the at least one third amplification factor with: (i) the first capacitance, or (ii) the first capacitance and the first photodiode capacitance, and wherein the dual conversion gain readout circuit is configured to form the at least one fourth amplification factor with: (iii) the first capacitance and the second capacitance; or (iv) the first capacitance and the second capacitance and the first photodiode capacitance. ### Claim 2 (depends on 1) The CMOS pixel as recited in claim 1, wherein the dual conversion gain readout circuit includes a second capacitance, and the dual conversion gain readout circuit forms the second amplification factor with the aid of the second capacitance. ### Claim 3 (depends on 2) The CMOS pixel as recited in claim 2, wherein the second capacitance is a capacitor. ### Claim 4 (depends on 3) The CMOS pixel as recited in claim 3, further comprising: a switch situated between the diffusion region and the capacitor. ### Claim 5 (depends on 4) The CMOS pixel as recited in claim 4, wherein the switch i-s includes a transistor. ### Claim 6 (depends on 1) The CMOS pixel as recited in claim 1, wherein a size of the at least one first photodiode is different than a size of the at least one second photodiode. ### Claim 7 (depends on 1) The CMOS pixel as recited in claim 1, wherein the at least one first photodiode is smaller in size or area than the at least one second photodiode. ### Claim 8 (depends on 1) The CMOS pixel as recited in claim 1, wherein the at least one first photodiode has a first photodiode capacitance, and wherein the at least one second photodiode has a second photodiode capacitance, and the first photodiode capacitance is smaller than the second photodiode capacitance. ### Claim 9 (depends on 8) The CMOS pixel as recited in claim 8, wherein the dual conversion gain readout circuit uses the first photodiode capacitance of the at least one first photodiode. ### Claim 10 (depends on 8) The CMOS pixel as recited in claim 8, wherein the at least one first photodiode provides the first photodiode capacitance of the dual conversion gain readout circuit. ### Claim 11 (depends on 10) The CMOS pixel as recited in claim 10, wherein the first photodiode is formed so that the first photodiode capacitance and the first capacitance are suitable so that the dual conversion gain readout circuit is adapted for the at least one second photodiode. ### Claim 12 (depends on 10) The CMOS pixel as recited in claim 10, further comprising: a switch situated between the at least one first photodiode and the diffusion region. ### Claim 13 (depends on 12) The CMOS pixel as recited in claim 12, wherein the switch includes a transistor. ### Claim 14 An image sensor, comprising: a CMOS pixel, including: a dual conversion gain readout circuit; at least one first photodiode; a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with a second amplification factor; and at least one second photodiode, wherein the diffusion region accommodates a charge of the at least one second photodiode, and wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor, and wherein the dual conversion gain readout circuit is configured to form the at least one third amplification factor with: (i) the first capacitance, or (ii) the first capacitance and the first photodiode capacitance, and wherein the dual conversion gain readout circuit is configured to form the at least one fourth amplification factor with: (iii) the first capacitance and the second capacitance; or (iv) the first capacitance and the second capacitance and the first photodiode capacitance. ### Claim 15 A camera, comprising: an image sensor, including a CMOS pixel that includes: a dual conversion gain readout circuit; at least one first photodiode; a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with a first amplification factor and with a second amplification factor; and at least one second photodiode, wherein the diffusion region accommodates a charge of the at least one second photodiode, and wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with at least one third amplification factor and at least one fourth amplification factor, and wherein the dual conversion gain readout circuit is configured to form the at least one third amplification factor with: (i) the first capacitance, or (ii) the first capacitance and the first photodiode capacitance, and wherein the dual conversion gain readout circuit is configured to form the at least one fourth amplification factor with: (iii) the first capacitance and the second capacitance; or (iv) the first capacitance and the second capacitance and the first photodiode capacitance. ### Claim 16 A method for reading out a CMOS pixel, the method comprising: reading out the charge of at least one first photodiode from a diffusion region with a first amplification factor, wherein the CMOS pixel includes a dual conversion gain readout circuit, the at least one first photodiode; the diffusion region, which has a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with a second amplification factor, and at least one second photodiode, wherein the diffusion region accommodates a charge of the at least one second photodiode, and wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor; reading out the charge of the at least one first photodiode from the diffusion region with the second amplification factor, resetting the dual conversion gain readout circuit and the first photodiode; reading out the charge of the at least one second photodiode from the diffusion region with the third amplification factor; and reading out the charge of the at least one second photodiode from the diffusion region with the fourth amplification factor. ### Claim 17 (depends on 16) The method as recited in claim 16, wherein in the step of reading out with the aid of the first amplification factor, the first capacitance is used for the reading out. ### Claim 18 (depends on 16) The method as recited in claim 16, wherein in the step of reading out with the aid of the second amplification factor, the first capacitance and the second capacitance are used for the reading out. ### Claim 19 (depends on 16) The method as recited in claim 16, wherein in the step of reading out with the aid of the third amplification factor, one of the first capacitance or the first capacitance and the first photodiode capacitance are used for the reading out. ### Claim 20 (depends on 16) The method as recited in claim 16, wherein in the step of reading out with the aid of the fourth amplification factor, one of the first capacitance and the second capacitance or the first capacitance and the second capacitance and the first photodiode capacitance are used for the reading out.