# US 10,872,912 B2 · Display substrate and display device

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- Number: US 10,872,912 B2
- Document ID: US10872912B2
- Status: Granted
- Kind: B2
- Application number: 16/319,704
- Filed: 2018-05-11
- Published: 2019-10-31
- Granted: 2020-12-22
- Earliest claimed: 2017-05-27
- Assignees: Hefei Boe Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd.
- Applicants: Hefei Boe Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd.
- Inventors: Ying Wang; Hongmin Li; Liqing Liao; Li Sun
- Web page: https://patentgrep.com/patent/US10872912B2

## CPC

- G02F 1/136204: {Arrangements to prevent high voltage or static electricity failures}
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 89/811: {using FETs as protective elements}
- H10W 42/60: protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60)
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A display substrate and a display device. The display substrate includes a signal line, an electro-static lead-out line, and an electro-static discharge unit including a first thin film transistor, a third thin film transistor and a fourth thin film transistor; a drain electrode and a gate electrode of the first thin film transistor are connected to the signal line; a source electrode of the first thin film transistor, a gate electrode of the third thin film transistor and a gate electrode of the fourth thin film transistor are connected to a first node; a drain electrode of the third thin film transistor and a drain electrode of the fourth thin film transistor are connected to the signal line; a source electrode of the third thin film transistor and a source electrode of the fourth thin film transistor are connected to the electro-static lead-out line.

## Claims

### Claim 1

A display substrate, comprising: a signal line located in a display region of the display substrate, and an electro-static discharge unit and an electro-static lead-out line in a frame region of the display substrate, wherein
the electro-static discharge unit comprises a first thin film transistor, a third thin film transistor and a fourth thin film transistor;
a drain electrode and a gate electrode of the first thin film transistor are respectively connected to the signal line;
a source electrode of the first thin film transistor, a gate electrode of the third thin film transistor and a gate electrode of the fourth thin film transistor are respectively connected to a first node;
a drain electrode of the third thin film transistor and a drain electrode of the fourth thin film transistor are respectively connected to the signal line;
a source electrode of the third thin film transistor and a source electrode of the fourth thin film transistor are respectively connected to the electro-static lead-out line,
the electro-static discharge unit further comprises: a fifth thin film transistor;
a drain electrode and a gate electrode of the fifth thin film transistor are respectively connected to the signal line;
a source electrode of the fifth thin film transistor is connected to the first node.

### Claim 2 (depends on 1)

The display substrate according to claim 1, wherein a channel length-width ratio of the fourth thin film transistor is the same as that of the third thin film transistor.

### Claim 3 (depends on 1)

The display substrate according to claim 1, wherein a channel length-width ratio of the fifth thin film transistor is the same as that of the first thin film transistor.

### Claim 4 (depends on 1)

The display substrate according to claim 1, wherein the electro-static discharge unit further comprises: a sixth thin film transistor;
a drain electrode and a gate electrode of the sixth thin film transistor are respectively connected to the electro-static lead-out line;
a source electrode of the sixth thin film transistor is connected to the first node.

### Claim 5 (depends on 4)

The display substrate according to claim 4, wherein a channel length-width ratio of the sixth thin film transistor is the same as that of the second thin film transistor.

### Claim 6 (depends on 1)

The display substrate according to claim 1, wherein the signal line is one or a combination of a data signal line, a gate electrode signal line, a control signal line, a clock signal line, and a test signal line.

### Claim 7 (depends on 1)

The display substrate according to claim 1, wherein the electro-static lead-out line is grounded, or the electro-static lead-out line is a common electrode line.

### Claim 8 (depends on 1)

A display device, comprising the display substrate according to claim 1.

### Claim 9 (depends on 1)

The display substrate according to claim 1, wherein the electro-static discharge unit further comprises:
a second thin film transistor, wherein a drain electrode and a gate electrode of the second thin film transistor are respectively connected to the electro-static lead-out line, a source electrode of the second thin film transistor is connected to the first node.

### Claim 10

An electro-static discharge unit, comprising:
a first thin film transistor, a third thin film transistor and a fourth thin film transistor;
a drain electrode and a gate electrode of the first thin film transistor are respectively connected to a signal line;
a source electrode of the first thin film transistor, a gate electrode of the third thin film transistor and a gate electrode of the fourth thin film transistor are respectively connected to a first node;
a drain electrode of the third thin film transistor and a drain electrode of the fourth thin film transistor are respectively connected to the signal line;
a source electrode of the third thin film transistor and a source electrode of the fourth thin film transistor are respectively connected to an electro-static lead-out line,
the electro-static discharge unit further comprises: a fifth thin film transistor;
a drain electrode and a gate electrode of the fifth thin film transistor are respectively connected to the signal line;
a source electrode of the fifth thin film transistor is connected to the first node.

### Claim 11 (depends on 10)

The electro-static discharge unit according to claim 10, further comprising:
a second thin film transistor, wherein a drain electrode and a gate electrode of the second thin film transistor are respectively connected to the electro-static lead-out line, a source electrode of the second thin film transistor is connected to the first node.

### Claim 12 (depends on 11)

The electro-static discharge unit according to claim 11, wherein a channel length-width ratio of the fourth thin film transistor is the same as that of the third thin film transistor.

### Claim 13 (depends on 10)

The electro-static discharge unit according to claim 10, wherein a channel length-width ratio of the fifth thin film transistor is the same as that of the first thin film transistor.

### Claim 14 (depends on 10)

The electro-static discharge unit according to claim 10, further comprising: a sixth thin film transistor;
a drain electrode and a gate electrode of the sixth thin film transistor are respectively connected to the electro-static lead-out line;
a source electrode of the sixth thin film transistor is connected to the first node.

### Claim 15 (depends on 14)

The electro-static discharge unit according to claim 14, wherein a channel length-width ratio of the sixth thin film transistor is the same as that of the second thin film transistor.