# US 10,872,877 B2 · Method of manufacturing semiconductor device

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- Number: US 10,872,877 B2
- Document ID: US10872877B2
- Status: Granted
- Kind: B2
- Application number: 16/502,055
- Filed: 2019-07-03
- Published: 2020-07-16
- Granted: 2020-12-22
- Earliest claimed: 2019-01-15
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Erubi Suzuki
- Web page: https://patentgrep.com/patent/US10872877B2

## CPC

- H10W 72/075: {of bond wires}
- H10W 72/01351: {Changing the shapes of die-attach connectors}
- H10W 72/01651: {Changing the shapes of strap connectors}
- H10W 72/07311: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/076: {of strap connectors}
- H10W 72/07611: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07633: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/531: {Shapes of wire connectors}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/631: {Shapes of strap connectors}
- H10W 72/652: {comprising metals or metalloids, e.g. silver}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device includes: forming a first electrode and a second electrode on an insulating layer so as to be apart from each other; forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.

## Claims

### Claim 1

A method of manufacturing a semiconductor device comprising:
forming a first electrode and a second electrode on an insulating layer so as to be apart from each other;
forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and
after forming the barrier, applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.

### Claim 2 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the metal terminal has a tip portion including the ultrasonic bonding portion and a main body portion bent upward with respect to the tip portion, and
the barrier is not formed on a side of the main body portion at the peripheral portion of the ultrasonic bonding portion.

### Claim 3 (depends on 2)

The method of manufacturing a semiconductor device according to claim 2, wherein a lower surface of the tip portion of the metal terminal is a flat surface.

### Claim 4 (depends on 3)

The method of manufacturing a semiconductor device according to claim 3, wherein an inner surface of the barrier is tapered.

### Claim 5 (depends on 4)

The method of manufacturing a semiconductor device according to claim 4, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 6 (depends on 3)

The method of manufacturing a semiconductor device according to claim 3, wherein a concaved portion is formed on a lower side of an inner surface of the barrier.

### Claim 7 (depends on 6)

The method of manufacturing a semiconductor device according to claim 6, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 8 (depends on 3)

The method of manufacturing a semiconductor device according to claim 3, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 9 (depends on 2)

The method of manufacturing a semiconductor device according to claim 2, wherein an inner surface of the barrier is tapered.

### Claim 10 (depends on 9)

The method of manufacturing a semiconductor device according to claim 9, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 11 (depends on 2)

The method of manufacturing a semiconductor device according to claim 2, wherein a concaved portion is formed on a lower side of an inner surface of the barrier.

### Claim 12 (depends on 11)

The method of manufacturing a semiconductor device according to claim 11, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 13 (depends on 2)

The method of manufacturing a semiconductor device according to claim 2, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 14 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein an inner surface of the barrier is tapered.

### Claim 15 (depends on 14)

The method of manufacturing a semiconductor device according to claim 14, wherein the barrier is formed only on one side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 16 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein a concaved portion is formed on a lower side of an inner surface of the barrier.

### Claim 17 (depends on 16)

The method of manufacturing a semiconductor device according to claim 16, wherein the barrier is formed only on a side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 18 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the barrier is formed only on one side of the second electrode at the peripheral portion of the ultrasonic bonding portion.

### Claim 19 (depends on 1)

The method of manufacturing a semiconductor device according to claim 1, wherein the barrier protrudes upward from an uppermost surface of the ultrasonic bonding portion of the metal terminal.