# US 10,872,870 B2 · Fabrication method of semiconductor structure

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- Number: US 10,872,870 B2
- Document ID: US10872870B2
- Status: Granted
- Kind: B2
- Application number: 16/403,877
- Filed: 2019-05-06
- Published: 2019-08-22
- Granted: 2020-12-22
- Earliest claimed: 2014-12-31
- Assignees: Siliconware Precision Industries Co., Ltd.
- Applicants: Siliconware Precision Industries Co., Ltd.
- Inventors: Yi-Cheih Chen; Sung-Huan Sun; Cheng-An Chang; Chien-Hung Wu; Fu-Tang Huang
- Web page: https://patentgrep.com/patent/US10872870B2

## CPC

- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/019: {of bond pads}
- H10W 72/90: Bond pads, in general
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01255: {by using masks}
- H10W 72/01257: {by reflowing}
- H10W 72/01908: {using permanent auxiliary members, e.g. using alignment marks}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01953: {by etching}
- H10W 72/221: {Structures or relative sizes}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/283: {Reinforcing structures, e.g. bump collars}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a semiconductor structure and a method of fabricating the same. The method includes: providing a chip having conductive pads, forming a metal layer on the conductive pads, forming a passivation layer on a portion of the metal layer, and forming conductive pillars on the metal layer. Since the metal layer is protected by the passivation layer, the undercut problem is solved, the supporting strength of the conductive pillars is increased, and the product reliability is improved.

## Claims

### Claim 1

A method of fabricating a semiconductor structure, comprising:
providing a chip having a plurality of conductive pads and at least one insulating layer formed on the plurality of conductive pads, wherein the insulating layer has a plurality of insulating layer openings exposing the plurality of conductive pads;
forming a metal layer on the insulating layer, and electrically connecting the metal layer to the conductive pads, with a portion of the insulating layer exposed from the metal layer;
forming directly on a portion of the metal layer and on the insulating layer a passivation layer that covers a lateral side of the metal layer, and forming a plurality of first openings in the passivation layer, with a portion of the metal layer exposed from the first openings, wherein the passivation layer between two neighboring ones of the conductive pads is either continuous or discontinuous, wherein each of the first openings has a width greater than a width of each of the insulating layer openings; and
after forming the passivation layer on the portion of the metal layer and on the insulating layer, forming a plurality of conductive pillars on the exposed portion of the metal layer in the first openings.

### Claim 2 (depends on 1)

The method of claim 1, wherein the metal layer is formed by:
forming a metal material on the conductive pads and the insulating layer;
forming a resist layer on the metal material, with a portion of the metal material exposed therefrom;
removing the exposed portion of the metal material, so as for a remaining portion of the metal material to form the metal layer; and
removing the resist layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the metal layer is made of titanium and copper.

### Claim 4 (depends on 1)

The method of claim 1, wherein the conductive pillars are copper pillars.

### Claim 5 (depends on 1)

The method of claim 1, further comprising forming a conductive material on a top surface of each of the conductive pillars.

### Claim 6 (depends on 1)

The method of claim 1, wherein the metal layer under each of the conductive pillars has a width greater than or equal to a width of each of the conductive pillars.

### Claim 7 (depends on 1)

The method of claim 1, further comprising, after providing the chip having the plurality of conductive pads, forming the insulating layer on the conductive pads, forming a plurality of second openings in the insulating layer, with a portion of each of the conductive pads exposed from each of the second openings, and electrically connecting the metal layer to the conductive pads.

### Claim 8 (depends on 1)

The method of claim 1, further comprising, after providing the chip having the plurality of conductive pads, forming the insulating layer on the conductive pads, forming a re-distribution layer on the insulating layer, electrically connecting the re-distribution layer to the conductive pads, and forming the metal layer on the re-distribution layer.

### Claim 9 (depends on 8)

The method of claim 8, wherein another insulating layer is formed on the re-distribution layer and the insulating layer, the another insulating layer has a plurality of third openings, and a portion of the re-distribution layer is exposed from the third openings.

### Claim 10 (depends on 1)

The method of claim 1, wherein a portion of the passivation layer is embedded into the conductive pillars when the conductive pillars are formed.

### Claim 11 (depends on 1)

The method of claim 1, wherein the conductive pillars are formed by:
forming a resist layer on the insulating layer and the passivation layer, and forming a plurality of openings in the resist layer, with a portion of the metal layer exposed from the openings;
forming the conductive pillars on the exposed portion of the metal layer in the openings of the resist layer; and
removing the resist layer.