# US 10,872,846 B2 · Solid top terminal for discrete power devices

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- Number: US 10,872,846 B2
- Document ID: US10872846B2
- Status: Granted
- Kind: B2
- Application number: 16/015,106
- Filed: 2018-06-21
- Published: 2019-01-03
- Granted: 2020-12-22
- Earliest claimed: 2017-06-22
- Assignees: Renesas Electronics America Inc.
- Applicants: Renesas Electronics America Inc.
- Inventors: Jean Claude Harel
- Web page: https://patentgrep.com/patent/US10872846B2

## CPC

- H10W 70/466: {Tape carriers or flat leads}
- H10D 12/032: {of vertical IGBTs}
- H10D 12/441: {Vertical IGBTs}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 70/041: {Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps}
- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 90/811: {Multiple chips on leadframes}
- H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
- H10W 70/442: {of multiple leadframes in a single chip}
- H10W 72/01323: {in liquid form, e.g. by dispensing droplets or by screen printing}
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07354: {changes in dispositions}
- H10W 72/076: {of strap connectors}
- H10W 72/07631: {Techniques}
- H10W 72/07632: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07653: {changes in shapes}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/347: {Dispositions of multiple die-attach connectors}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/631: {Shapes of strap connectors}
- H10W 72/634: {Cross-sectional shape}
- H10W 72/646: {the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector}
- H10W 72/886: {Die-attach connectors and strap connectors}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/763: {between laterally-adjacent chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)

## Abstract

A solid top terminal for discrete power devices. In one embodiment, an apparatus is formed that includes a first die comprising a transistor, which in turn includes a first electrode such as an emitter. The apparatus also includes a first conductor sintered to an electroplated second conductor such as a solid top terminal. Importantly, the first conductor is electrically coupled to the first electrode.

## Claims

### Claim 1

An apparatus comprising:
a first die comprising a transistor, the transistor comprising a first electrode and a second electrode; and
a first conductor electrically coupled to the first electrode and sintered directly to an electroplated second conductor including a first lead; and
a third conductor electrically coupled to the second electrode and sintered directly to an electroplated fourth conductor including a second lead,
wherein the first conductor and the second conductor comprise conductive layers, and
wherein the transistor comprises an insulated-gate bipolar transistor (IGBT), and wherein the first electrode comprises a collector of the IGBT.

### Claim 2 (depends on 1)

The apparatus of claim 1 wherein the second conductor is electroplated with a conductive material, and wherein the first conductor also comprises the conductive material.

### Claim 3 (depends on 2)

The apparatus of claim 2 wherein the conductive material comprises silver.

### Claim 4 (depends on 1)

The apparatus of claim 1 further comprising:
a package;
wherein the package fully contains the first die and the first conductor;
wherein the package partially contains the electroplated second conductor such that a portion of the electroplated second conductor extends from the package.

### Claim 5 (depends on 4)

The apparatus of claim 4, wherein the electroplated second conductor is a monolithic structure such that the portion extending from the package is monolithically formed with an opposite portion that is sintered to the first conductor.

### Claim 6 (depends on 1)

The apparatus of claim 1 wherein the first conductor was formed on the die before the die was cut from a wafer that comprises a plurality of dies, and wherein the first conductor and the electroplated second conductor were sintered together after the die was cut from the wafer.

### Claim 7 (depends on 1)

The apparatus of claim 1 wherein the first conductor comprises a first pad that was formed on the die before the die was cut from a wafer comprising a plurality of dies, wherein the electroplated second conductor comprises a first element and an integrally connected second element that extends at a non-zero angle from the first element, wherein the second element exposes a substantially flat surface area before the first conductor and the electroplated second conductor were sintered together, and wherein the exposed surface area is sintered to the first pad.

### Claim 8 (depends on 1)

The apparatus of claim 1 further comprising: a second die, the second die comprising a device, the device comprising a first device terminal; a third conductor sintered to the electroplated second conductor; wherein the third conductor is electrically coupled to the first device terminal.

### Claim 9 (depends on 1)

The apparatus of claim 1 wherein the first conductor and the electroplated second conductor were sintered together by heating the first conductor and the first electroplated second conductor without liquefying the first conductor or a portion thereof.

### Claim 10 (depends on 1)

The apparatus of claim 1, wherein the first conductor is wirelessly electrically coupled to the first electrode and the second conductor, and the third conductor is wirelessly electrically coupled to the second electrode and the fourth conductor.

### Claim 11

A method comprising:
forming a transistor on a die of a wafer, wherein the transistor comprises a first electrode and a second electrode;
forming a first conductor on the die, wherein the first conductor is a conductive layer electrically coupled to the first electrode;
cutting the die from the wafer after the first conductor is formed thereon;
plating a second conductor including a first lead with a conductive material;
sintering the plated second conductor directly with the first conductor after the first die is cut from the wafer;
forming a fourth conductor on the die, wherein the fourth conductor is a conductive layer electrically coupled to the second electrode;
plating a fifth conductor including a second lead with the conductive material; and
sintering the plated fourth conductor directly with the fourth conductor after the first die is cut from the wafer,
wherein the transistor comprises an insulated-gate bipolar transistor (IGBT), and
wherein the first electrode comprises a collector of the IGBT.

### Claim 12 (depends on 11)

The method of claim 11 wherein the first conductor comprises the conductive material.

### Claim 13 (depends on 12)

The method of claim 12 wherein the conductive material is silver.

### Claim 14 (depends on 11)

The method of claim 11 further comprising: forming a diode on a second die, wherein the diode comprises a first diode electrode; forming a third conductor on the second die, wherein the third conductor is electrically coupled to the first diode electrode; cutting the second die from another wafer that includes a plurality of dies, wherein the second die is cut from the other wafer after the third conductor is formed on the second die; and sintering the plated second conductor with the third conductor after the second die is cut from the other wafer.

### Claim 15 (depends on 11)

The method of claim 11 wherein the sintering comprises heating the first conductor and the plated second conductor at the same time without liquefying the first conductor or the plated second conductor, or any portion of either.

### Claim 16 (depends on 11)

The method of claim 11 wherein the sintering comprises compressing the first conductor and the plated second conductor together without liquefying the first conductor or the plated second conductor, or any portion of either.

### Claim 17 (depends on 11)

The method of claim 11 further comprising encapsulating the die, the first conductor, and a portion of the plated second conductor with an encapsulating material in order to create a package, wherein the plated second conductor extends from the package after the encapsulation.

### Claim 18 (depends on 11)

The method of claim 11 wherein the act of plating the second conductor comprises electroplating the second conductor with the conductive material.

### Claim 19

An apparatus comprising:
a substrate comprising a first conductive material;
a die mounted on the substrate, the die comprising a transistor, the transistor comprising a first electrode and a second electrode; and
a first conductor electrically coupled to the first electrode and fused directly to a plated second conductor including a first lead;
a third conductor electrically coupled to the second electrode and fused directly to a plated fourth conductor including a second lead;
wherein the first conductor and the second conductor comprise conductive layers, and
wherein the transistor comprises an insulated-gate bipolar transistor (IGBT), and wherein the first electrode comprises a collector of the IGBT.

### Claim 20

The apparatus of 19 wherein the first conductor was fused to the plated second conductor by heating the first conductor and the plated second conductor without liquefying either the first conductor or the plated second conductor, or a portion thereof.