# US 10,872,843 B2 · Semiconductor devices with back-side coils for wireless signal and power coupling

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- Number: US 10,872,843 B2
- Document ID: US10872843B2
- Status: Granted
- Kind: B2
- Application number: 15/584,278
- Filed: 2017-05-02
- Published: 2018-11-08
- Granted: 2020-12-22
- Earliest claimed: 2017-05-02
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Kyle K. Kirby
- Web page: https://patentgrep.com/patent/US10872843B2

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10D 1/20: Inductors
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers}
- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/635: {Through-vias}
- H10W 90/00: Package configurations
- H10W 90/293: {characterised by non-galvanic coupling between the chips, e.g. capacitive coupling}
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/732: {between stacked chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a substrate, a plurality of circuit elements on a front side of the substrate, and a first substantially spiral-shaped conductor on a back side of the substrate is provided. The device further includes a first through-substrate via (TSV) electrically connecting a first end of the substantially spiral-shaped conductor to a first one of the plurality of circuit elements, and a second TSV electrically connecting a second end of the substantially spiral-shaped conductor to a second one of the plurality of circuit elements. The device may be a package further including a second die having a front side on which is disposed a second substantially spiral-shaped conductor. The front side of the second die is disposed facing the back side of the substrate, such that the first and second substantially spiral-shaped conductors are configured to wirelessly communicate.

## Claims

### Claim 1

A semiconductor device, comprising:
a silicon substrate;
a first insulating layer on a front side of the silicon substrate;
a second insulating layer on a back side of the silicon substrate;
a plurality of circuit elements in the first insulating layer on the front side of the silicon substrate;
a first substantially spiral-shaped conductor in the second insulating layer on the back side of the silicon substrate;
a first through-substrate via (TSV) extending through the silicon substrate between the first insulating layer and the second insulating layer and electrically connecting a first end of the substantially spiral-shaped conductor to a first one of the plurality of circuit elements;
a second TSV extending through the silicon substrate between the first insulating layer and the second insulating layer electrically connecting a second end of the substantially spiral-shaped conductor to a second one of the plurality of circuit elements; and
a second substantially spiral-shaped conductor in the first insulating layer on the front side of the silicon substrate, coaxially aligned with the first substantially spiral-shaped conductor, and electrically connected to the first substantially spiral-shaped conductor by the first and second TSVs.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first substantially spiral-shaped conductor is configured to be wirelessly coupled to another substantially spiral-shaped conductor in another semiconductor device.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first TSV is coaxially aligned with the first and second substantially spiral-shaped conductors.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the first TSV and the second TSV are disposed proximate to but not coaxially aligned with the first substantially spiral-shaped conductor.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first insulating layer covers the first substantially spiral-shaped conductor.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the silicon substrate is between about 10 and 100 μm thick.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein each of the first and second TSV is between about 2 and 50 μm in diameter.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the first and second substantially spiral-shaped conductors each spans an area of between about 80 and 600 μm across.