# US 10,872,839 B2 · Method for manufacturing semiconductor device

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- Number: US 10,872,839 B2
- Document ID: US10872839B2
- Status: Granted
- Kind: B2
- Application number: 16/449,915
- Filed: 2019-06-24
- Published: 2019-10-10
- Granted: 2020-12-22
- Earliest claimed: 2018-03-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Jhon-Jhy Liaw
- Web page: https://patentgrep.com/patent/US10872839B2

## CPC

- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6217: {having non-uniform gate electrodes, e.g. gate conductors having varying doping}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 48/01: Manufacture or treatment
- H10D 84/853: {comprising FinFETs}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10D 30/6215: {having multiple independently-addressable gate electrodes}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 86/215: {comprising FinFETs}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method includes doping a substrate with a dopant to form a first well region of a first core circuit and a second well region of a second core circuit; forming first and second semiconductor fins respectively over the first and second well regions and extending along a direction; forming a first gate stack across the first semiconductor fin and a second gate stack across the second semiconductor fin; forming a first source/drain adjoining the first semiconductor fin and a second source/drain adjoining the second semiconductor fin; and forming a first contact over the first source/drain and having a first width measured along the direction and a second contact over the second source/drain and having a second width measured along the direction, wherein the second width of the second contact is greater than the first width of the first contact.

## Claims

### Claim 1

A method comprising:
doping a substrate with a dopant to form a first well region of a first core circuit and a second well region of a second core circuit;
forming first and second semiconductor fins respectively over the first and second well regions and extending along a first direction;
forming a first gate stack across the first semiconductor fin and extending along a second direction transverse to the first direction and a second gate stack across the second semiconductor fin and extending along the second direction;
forming a first source/drain adjoining the first semiconductor fin and a second source/drain adjoining the second semiconductor fin; and
forming a first contact over the first source/drain and having a first width measured along the first direction and a second contact over the second source/drain and having a second width measured along the first direction, wherein the second width of the second contact is greater than the first width of the first contact.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming the first and second contacts is performed such that a ratio of the second width of the second contact to the first width of the first contact is in a range between about 1.2 and about 3.

### Claim 3 (depends on 1)

The method of claim 1, wherein the forming the first and second contacts is performed such that a length of the second contact measured along the second direction is greater than a length of the first contact measured along the second direction.

### Claim 4 (depends on 1)

The method of claim 1, wherein the forming the first and second contacts is performed such that an area of a top surface of the second contact is greater than an area of a top surface of the first contact.

### Claim 5 (depends on 1)

The method of claim 1, wherein the forming the first and second contacts is performed such that a distance between the second contact and the second gate stack is greater than a distance between the first contact and the first gate stack.

### Claim 6 (depends on 1)

The method of claim 1, wherein the forming the first and second source/drains is performed such that a top surface of the second source/drain is recessed toward the substrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein the forming the first and second gate stacks is performed such that a length of the second gate stack is longer than a length of the first gate stack.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
forming a third gate stack across the first semiconductor fin and a fourth gate stack across the second semiconductor fin, wherein the first contact is between the first and third gate stacks, the second contact is between the second and fourth gate stacks, and a first distance between the second and fourth gate stacks is greater than a second distance between the first and third gate stacks.

### Claim 9 (depends on 8)

The method of claim 8, wherein the forming the third and fourth gate stacks is performed such that a ratio of the second distance to the first distance is in a range between about 1.2 and about 1.8.

### Claim 10 (depends on 1)

The method of claim 1, further comprising:
forming a third contact over the second gate stack, wherein the third contact comprises cobalt.

### Claim 11

A method comprising:
forming a first fin of a first core circuit and a second fin of a second core circuit over a substrate;
forming a first gate electrode across the first fin and a second gate electrode across the second fin;
forming a first source/drain adjoining the first fin and a second source/drain adjoining the second fin;
forming a first contact over the first source/drain and a second contact over the second source/drain; and
forming a first via over the first contact and a second via over the second contact, wherein an area of a top surface of the second via is greater than an area of a top surface of the first via, and a width of the second via measured along a lengthwise direction of the second fin is greater than a width of the first contact measured along a lengthwise direction of the first fin.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming the first and second contacts is performed such that a bottom surface of the second contact is lower than a top surface of the second fin.

### Claim 13 (depends on 11)

The method of claim 11, wherein the forming the first and second contacts is performed such that a bottom surface of the first contact is higher than a top surface of the first fin.

### Claim 14 (depends on 11)

The method of claim 11, wherein the second contact comprises cobalt.

### Claim 15 (depends on 11)

The method of claim 11, further comprising:
forming a third contact over the second gate electrode and overlapping the second fin.

### Claim 16

A method comprising:
modelling in a layout first and second fins extending along a direction;
modelling in the layout a first gate electrode superimposed over the first fin and a second gate electrode superimposed over the second fin;
modelling in the layout a first source/drain contact superimposed over the first fin and having a first width measured along the direction;
modelling in the layout a second source/drain contact superimposed over the second fin and having a second width measured along the direction, wherein the second width of the second source/drain contact is greater than the first width of the first source/drain contact; and
forming physical first and second fins, physical first and second gate electrodes, and physical first and second source/drain contacts in an integrated circuit using the first and second fins, the first and second gate electrodes, and the first and second source/drain contacts as patterns.

### Claim 17 (depends on 16)

The method of claim 16, wherein the modelling in the layout the first and second source/drain contacts is performed such that a ratio of an area of a top surface of the second source/drain contact to an area of a top surface of the first source/drain contact is in a range between about 1.2 and about 9.

### Claim 18 (depends on 16)

The method of claim 16, further comprising:
modelling in the layout a first source/drain via superimposed over the first source/drain contact and a second source/drain via superimposed over the second source/drain contact, wherein an area of a top surface of the second source/drain via is greater than an area of a top surface of the first source/drain via; and
forming a physical first source/drain via and a physical second source/drain via in the integrated circuit using the first source/drain via and the second source/drain via as patterns.

### Claim 19 (depends on 16)

The method of claim 16, further comprising:
modelling in the layout a third gate electrode superimposed over the first fin and a fourth gate electrode superimposed over the second fin,
wherein the first source/drain contact is between the first and third gate electrodes, the second source/drain contact is between the second and fourth gate electrodes, and a distance between the second and fourth gate electrodes is greater than a distance between the first and third gate electrodes.

### Claim 20 (depends on 11)

The method of claim 11, wherein the second contact has a width measured along a lengthwise direction of the second fin greater than a width of the first contact measured along a lengthwise direction of the first fin.