# US 10,872,830 B2 · Power semiconductor module with short circuit failure mode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,830 B2 - Document ID: US10872830B2 - Status: Granted - Kind: B2 - Application number: 16/529,295 - Filed: 2019-08-01 - Published: 2019-11-21 - Granted: 2020-12-22 - Earliest claimed: 2017-02-01 - Assignees: ABB Schweiz AG - Applicants: ABB Schweiz AG - Inventors: Chunlei Liu; Juergen Schuderer; Franziska Brem; Munaf Rahimo; Peter Karl Steimer; Franc Dugal - Web page: https://patentgrep.com/patent/US10872830B2 ## CPC - H10W 76/138: having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type - H10D 62/8325: {Silicon carbide} - H10W 42/80: protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) - H10W 70/20: Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) - H10W 72/30: Die-attach connectors - H10W 90/00: Package configurations - H10W 72/00: Interconnections or connectors in packages - H10W 72/07554: {changes in dispositions} - H10W 72/853: {On the same surface} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent. ## Claims ### Claim 1 A power semiconductor module, comprising: a base plate; a Si chip comprising a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against a side of the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; a second metal preform pressed with a second press pin against a side of the wide bandgap material chip; wherein the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; wherein the first metal preform is adapted for forming a conducting path through the Si chip by forming an alloy with the Si substrate, when heated by an overcurrent; wherein the second metal preform, which is made of a material with a higher melting point as a material of the first metal preform, is adapted for forming an at least temporary conducting path through the wide bandgap material chip, when heated by an overcurrent. ### Claim 2 (depends on 1) The power semiconductor module of claim 1, wherein the second metal preform is adapted for forming an at least temporary conducting path through the wide bandgap material chip by at least partially being melted by the overcurrent. ### Claim 3 (depends on 1) The power semiconductor module of claim 1, wherein the first metal preform is made of Al, Cu, Ag, Mg or an alloy thereof. ### Claim 4 (depends on 1) The power semiconductor module of claim 1, wherein the second metal preform is made of Mo, W or an alloy thereof. ### Claim 5 (depends on 1) The power semiconductor module of claim 1, wherein the base plate is made of Mo. ### Claim 6 (depends on 1) The power semiconductor module of claim 1, wherein the wide bandgap material of the wide bandgap material chip is SiC. ### Claim 7 (depends on 1) The power semiconductor module of claim 1, wherein the Si chip comprises a semiconductor switch provided in the Si substrate. ### Claim 8 (depends on 7) The power semiconductor module of claim 7, wherein a gate of the semiconductor switch of the Si chip is electrically connected in the semiconductor module with a gate of the semiconductor switch of the wide bandgap material chip. ### Claim 9 (depends on 7) The power semiconductor module of claim 7, wherein a gate of the semiconductor switch of the Si chip is electrically connected to a first gate terminal of the semiconductor module and a gate of the semiconductor switch of the wide bandgap material chip is electrically connected to a second gate terminal of the semiconductor module, such that the semiconductor switch of the Si chip is switchable independently of the semiconductor switch of the wide bandgap material chip. ### Claim 10 (depends on 7) The power semiconductor module of claim 7, wherein a gate of the semiconductor switch of the Si chip is not connected to a gate terminal provided by the semiconductor module. ### Claim 11 (depends on 1) The power semiconductor module of claim 1, wherein the Si chip does not comprise an active switchable switch. ### Claim 12 (depends on 1) The power semiconductor module of claim 1, wherein the Si chip is a passive Si layer. ### Claim 13 (depends on 1) The power semiconductor module of claim 1, wherein the power semiconductor module comprises at least two wide bandgap material chips connected in parallel with the Si chip. ### Claim 14 (depends on 1) The power semiconductor module of claim 1, further comprising: an electrically conducting top plate connected to the first press pin and the second press pin. ### Claim 15 (depends on 1) The power semiconductor module of claim 1, wherein at least one of the first press pin and the second press pin comprises a spring element. ### Claim 16 (depends on 2) The power semiconductor module of claim 2, wherein the first metal preform is made of Al, Cu, Ag, Mg or an alloy thereof. ### Claim 17 (depends on 1) The power semiconductor module of claim 1, wherein the second metal preform is made of Mo, W or an alloy thereof; and wherein the base plate is made of Mo. ### Claim 18 (depends on 2) The power semiconductor module of claim 2, wherein the wide bandgap material of the wide bandgap material chip is SiC. ### Claim 19 (depends on 2) The power semiconductor module of claim 2, wherein the Si chip comprises a semiconductor switch provided in the Si substrate. ### Claim 20 (depends on 17) The power semiconductor module of claim 17, wherein the wide bandgap material of the wide bandgap material chip is SiC.