# US 10,872,827 B2 · Manufacturing method and evaluation method for SiC device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,827 B2 - Document ID: US10872827B2 - Status: Granted - Kind: B2 - Application number: 16/514,114 - Filed: 2019-07-17 - Published: 2020-01-23 - Granted: 2020-12-22 - Earliest claimed: 2018-07-19 - Assignees: Showa Denko K.K. - Applicants: Showa Denko K.K. - Inventors: Ling Guo - Web page: https://patentgrep.com/patent/US10872827B2 ## CPC - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - G01N 21/6489: {Photoluminescence of semiconductors} - G01N 21/9501: {Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} - G01N 27/00: Investigating or analysing materials by the use of electric, electrochemical, or magnetic means (G01N3/00 – G01N25/00 take precedence; measurement or testing of electric or magnetic variables or of electric or magnetic properties of materials G01R) - H10P 30/28: characterised by an annealing step, e.g. for activation of dopants - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - G01N 2021/8427: {Coatings} - H10P 30/2042: {into crystalline silicon carbide} - H10P 30/21: {of electrically active species} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract Provided is a manufacturing method for a SiC device including: performing an ion implantation process of implanting ions in an epitaxial layer of a SiC epitaxial wafer that has the epitaxial layer; and performing an evaluation process of evaluating a defect of the SiC epitaxial wafer after the ion implantation process, in which the evaluation process includes a surface inspection process of inspecting a surface of the SiC epitaxial wafer, a PL inspection process of irradiating a region that includes the defect detected in the surface inspection to perform photoluminescence measurement after the surface inspection process, and a determination process of determining a degree of the defect from a surface defect image detected in the surface inspection and a PL defect image detected in the PL inspection process. ## Claims ### Claim 1 A manufacturing method for a SiC device, comprising: performing an ion implantation process of implanting ions in an epitaxial layer of a SiC epitaxial wafer that has the epitaxial layer; and performing an evaluation process of evaluating a defect of the SiC epitaxial wafer after the ion implantation process, wherein the evaluation process includes a surface inspection process of inspecting a surface of the SiC epitaxial wafer, a photoluminescence inspection process of irradiating a region that includes the defect detected in the surface inspection with excitation light to perform photoluminescence measurement after the surface inspection process, and a determination process of determining a degree of the defect from a surface defect image detected in the surface inspection and a photoluminescence defect image detected in the photoluminescence inspection process, wherein in the photoluminescence inspection process, the defect evaluated in the evaluation process is determined as being defective in a case in which a ratio between luminance S at a light emitting portion that emits light and light emitting intensity N at a light non-emitting portion that does not emit light is equal to or greater than 4.0. ### Claim 2 (depends on 1) The manufacturing method for a SiC device according to claim 1, further comprising: performing an electric strength measurement process of applying a voltage to each produced SiC device to perform electric strength measurement after the evaluation process. ### Claim 3 (depends on 2) The manufacturing method for a SiC device according to claim 2, wherein in the photoluminescence inspection process, the defect evaluated in the evaluation process is determined as being defective in a case in which the ratio between the luminance S at the light emitting portion that emits light and light emission intensity N at the light non-emitting portion that does not emit light is equal to or greater than 2.0. ### Claim 4 (depends on 1) The manufacturing method for a SiC device according to claim 1, wherein in the photoluminescence inspection process, the defect evaluated in the evaluation process is determined as being defective in a case in which the ratio between the luminance S at the light emitting portion that emits light and light emission intensity N at the light non-emitting portion that does not emit light is equal to or greater than 2.0. ### Claim 5 An evaluation method for a SiC device, comprising: performing a surface inspection process of inspecting a surface of a SiC epitaxial wafer; performing a photoluminescence inspection process of irradiating the surface of the SiC epitaxial wafer with excitation light to perform photoluminescence measurement; and performing a determination process of determining a degree of defect from a surface defect image detected in the surface inspection and a photoluminescence defect image detected in the PL inspection process, wherein in the photoluminescence inspection process, the defect evaluated in the evaluation process is determined as being defective in a case in which a ratio between luminance S at a light emitting portion that emits light and light emitting intensity N at a light non-emitting portion that does not emit light is equal to or greater than 4.0. ### Claim 6 (depends on 5) The evaluation method for a SiC device as claimed in claim 5, wherein in the photoluminescence inspection process, the defect evaluated in the evaluation process is determined as being defective in a case in which the ratio between the luminance S at the light emitting portion that emits light and light emission intensity N at the light non-emitting portion that does not emit light is equal to or greater than 2.0.