# US 10,872,822 B2 · Method for manufacturing semiconductor devices

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- Number: US 10,872,822 B2
- Document ID: US10872822B2
- Status: Granted
- Kind: B2
- Application number: 16/725,693
- Filed: 2019-12-23
- Published: 2020-04-30
- Granted: 2020-12-22
- Earliest claimed: 2017-09-28
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Ling-Yen Yeh; Carlos H. Diaz; Wilman Tsai
- Web page: https://patentgrep.com/patent/US10872822B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 30/0415: {of FETs having ferroelectric gate insulators}
- H10D 30/701: {IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 64/033: {comprising ferroelectric layers}
- H10D 84/0144: {Manufacturing their gate insulating layers}
- H10D 84/0158: {the components including FinFETs}
- H10P 14/6544: {to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer}
- H10P 14/69392: {the material containing hafnium, e.g. HfO2}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a method of manufacturing a circuit including a MOSFET disposed in a MOSFET region and a negative capacitance FET (NCFET) disposed in a NCFET region, a dielectric layer is formed over a channel layer in the MOSFET region and the NCFET region. A first metallic layer is formed over the dielectric layer in the MOSFET region and the NCFET region. After the first metallic layer is formed, an annealing operation is performed only in the NCFET region. After the annealing operation, the first metallic layer is removed from the MOSFET region and the NCFET region. The annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam.

## Claims

### Claim 1

A method of manufacturing a negative capacitance structure, the method comprising:
forming sidewall spacers at opposite ends of a gate region on top of a fin;
forming a dielectric layer over the fin in the gate region between the sidewall spacers and on the sidewall spacers;
forming a first metallic layer over the dielectric layer;
forming a cap layer over the first metallic layer;
after the cap layer is formed, performing an annealing operation; and
after the annealing operation, removing the cap layer and the first metallic layer; and
wherein the annealing operation includes irradiating the cap layer, the first metallic layer, and the dielectric layer in the gate region between the sidewall spacers and on upper parts of the sidewall spacers with an energy beam, and
after the annealing operation, the dielectric layer in the gate region between the sidewall spacers and on the upper parts of the sidewall spacers becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.

### Claim 2 (depends on 1)

The method of claim 1, wherein the dielectric layer includes one selected from the group consisting of HfO2, ZrO2 and SrTiO3.

### Claim 3 (depends on 1)

The method of claim 1, wherein:
the dielectric layer includes HfO2, and
the first metallic layer includes one or more selected from the group consisting of Si, Zr, Al, La, Y, Gd, Mg and Sr.

### Claim 4 (depends on 1)

The method of claim 1, wherein the energy beam heats the first metallic layer and the dielectric layer to a temperature in a range from 600° C. to 1000° C.

### Claim 5 (depends on 1)

The method of claim 1, further comprising, after the annealing operation, removing the first metallic layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the ferroelectric dielectric layer has a U-shape.

### Claim 7 (depends on 1)

The method of claim 1, wherein the cap layer includes silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.

### Claim 8 (depends on 1)

The method of claim 1, further comprising, after the removing the cap layer and the first metallic layer, forming one or more second metallic layers over the dielectric layer.

### Claim 9

A method of manufacturing a circuit including a metal-oxide-semiconductor field effect transistor (MOSFET) disposed in a MOSFET region and a negative capacitance field effect transistor (NCFET) disposed in a NCFET region, the method comprising:
forming sidewall spacers at opposite ends of gate regions on top of fins in the MOSFET and NCFET regions;
forming a dielectric layer over the fins in the gate regions of the NCFET and MOSFET regions between the sidewall spacers and on the sidewall spacers;
forming a first metallic layer over the dielectric layer in the MOSFET region and the NCFET region;
after the first metallic layer is formed, performing an annealing operation only in the NCFET region; and
after the annealing operation, removing the first metallic layer from the MOSFET region and the NCFET region,
wherein the annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region between the sidewall spacers and on upper parts of the sidewall spacers in the NCFET region with an energy beam, and
after the annealing operation, in the NCFET region, the dielectric layer in the gate region between the sidewall spacers and on the upper parts of the sidewall spacers becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.

### Claim 10 (depends on 9)

The method of claim 9, wherein the dielectric layer includes amorphous HfO2.

### Claim 11 (depends on 10)

The method of claim 10, wherein the first metallic layer includes one or more selected from the group consisting of Si, Zr, Al, La, Y, Gd, Mg and Sr.

### Claim 12 (depends on 10)

The method of claim 10, wherein the energy beam includes one selected from the group consisting of an electron beam, an ion beam, a molecular beam, a laser light beam, and a neutral beam having an energy to heat the first metallic layer and the dielectric layer to a temperature in a range from 600° C. to 1000° C.

### Claim 13 (depends on 9)

The method of claim 9, further comprising, before the annealing operation, forming a cap layer over the first metallic layer in the MOSFET region and the NCFET region.

### Claim 14 (depends on 13)

The method of claim 13, wherein the cap layer includes silicon oxide.

### Claim 15 (depends on 13)

The method of claim 13, further comprising, after the annealing operation, removing the cap layer and the first metallic layer from the MOSFET region and the NCFET region.

### Claim 16

A method of manufacturing a circuit including a metal-oxide-semiconductor field effect transistor (MOSFET) disposed in a MOSFET region and a negative capacitance field effect transistor (NCFET) disposed in a NCFET region, the method comprising:
forming a first dummy gate structure over a first fin structure formed in the MOSFET region on a substrate and a second dummy gate structure over a second fin structure formed in the NCFET region on the substrate;
forming a first source/drain structure over the first fin structure on opposing sides of the first dummy gate structure and a second source/drain structure over the second fin structure on opposing sides of the second dummy gate structure;
forming an interlayer dielectric layer over the first and second source/drain structures;
removing the first dummy gate structure and the second dummy gate structure, thereby exposing a first channel region of the first fin structure and a second channel region of the first fin structure;
forming sidewall spacers at opposite ends of the first and second channel regions on top of the first and second fin structures in the MOSFET and NCFET regions;
forming a dielectric layer over the first and second fin structures in the NCFET and MOSFET regions between the sidewall spacers, over sidewalls of the first and second fin structures in the first and second channel regions from a top of the first and second channel regions to the substrate, and on the sidewall spacers;
forming a first metallic layer over the dielectric layer in the MOSFET region and the NCFET region;
after the first metallic layer is formed, performing an annealing operation only in the NCFET region; and
after the annealing operation, removing the first metallic layer from the MOSFET region and the NCFET region,
wherein the annealing operation includes irradiating, in the NCFET region, the first metallic layer and the dielectric layer between the sidewall spacers and the sidewalls of the second fin structure in the second channel region with an energy beam and irradiating the first metallic layer and the dielectric layer on the sidewall spacers of the NCFET region with the energy beam, and
after the annealing operation, in the NCFET region, the dielectric layer over the second fin structure, on the sidewalls of the second fin structure, and on the of the sidewall spacers of the NCFET region becomes a ferroelectric layer including an orthorhombic crystal phase.

### Claim 17 (depends on 16)

The method of claim 16, further comprising forming one or more second metallic layers over the dielectric layer in the MOSFET region and over the ferroelectric layer in the NCFET region.

### Claim 18 (depends on 16)

The method of claim 16, wherein:
the dielectric layer in the MOSFET region after the first metallic layer is removed includes amorphous HfO2, and
the ferroelectric layer in the NCFET region includes HfO2 doped with one or more selected from the group consisting of Si, Zr, Al, La, Y, Gd, Mg and Sr.

### Claim 19 (depends on 16)

The method of claim 16, wherein the energy beam includes one selected from the group consisting of an electron beam, an ion beam, a molecular beam, a laser light beam, and a neutral beam.

### Claim 20 (depends on 16)

The method of claim 16, wherein the sidewall spacers include one or more layers comprising silicon oxide, silicon nitride, or silicon oxynitride.