# US 10,872,801 B2 · Target substrate with micro semiconductor structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,801 B2 - Document ID: US10872801B2 - Status: Granted - Kind: B2 - Application number: 16/121,945 - Filed: 2018-09-05 - Published: 2019-03-07 - Granted: 2020-12-22 - Earliest claimed: 2017-09-06 - Assignees: Ultra Display Technology Corp. - Applicants: Ultra Display Technology Corp. - Inventors: Hsien-Te Chen - Web page: https://patentgrep.com/patent/US10872801B2 ## CPC - H10P 72/74: {using temporarily an auxiliary support} - B65G 47/90: Devices for picking-up and depositing articles or materials - H10W 90/00: Package configurations - H10H 20/0364: {of interconnections} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10P 72/7428: {used to support diced chips prior to mounting} - H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate} - H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} - H10W 72/0198: {batch processes} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B65G: TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS (packaging B65B; handling thin or filamentary materials, e.g. paper sheets or thread, B65H; cranes B66C; portable mobile or lifting or hauling appliances, e.g. hoists, B66D; devices for lifting or lowering goods for loading or unloading purposes, e.g. fork-lift trucks, B66F9/00; emptying bottles, jars, casks, barrels or similar containers, not otherwise provided for, B67C9/00; delivering or transferring liquids B67D; filling or discharging vessels for liquefied, solidified or compressed gases F17C; pipe-line systems for fluids F17D) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A target substrate with micro semiconductor structures is manufactured by following steps of: attaching a pre-adhesive layer on a target substrate; patterning the adhesive layer to form a plurality of micro contact protrusions; and using the target substrate to perform a selective batch pickup procedure to pick up a plurality of micro semiconductor structures so as to form the target substrate with micro semiconductor structures. ## Claims ### Claim 1 A target substrate with micro semiconductor structures, comprising: a target substrate having a substrate body and a plurality of conductive portions disposed on the substrate body; a plurality of micro semiconductor structures patternedly disposed on the target substrate, wherein each of the micro semiconductor structures comprises a main body and at least a pair of electrodes disposed on the main body, and each of the electrodes is directly contacted and eutectic bonded with corresponding one of the conductive portions of the target substrate excluding a solder between the electrode and the conductive portion; and a plurality of micro contact protrusions connecting the main bodies of the patterned micro semiconductor structures to the substrate body of the target substrate, wherein with respect to the pair of the electrodes of one of the micro semiconductor structures, a zone is between the pair of the electrodes, at least one part of the micro contact protrusions is beyond the zone and at a periphery of the pair of the electrodes; wherein each of the micro semiconductor structures is a single structure excluding semiconductor package. ### Claim 2 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are disposed around the corresponding conductive portions at the periphery of the pair of the electrodes. ### Claim 3 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are continuously or discontinuously disposed. ### Claim 4 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein one part of the micro contact protrusions is disposed between the pair of the electrodes of each of the micro semiconductor structures. ### Claim 5 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are not disposed at the zone between the pair of the electrodes of each of the micro semiconductor structures. ### Claim 6 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro semiconductor structures are horizontal-electrode or flip-chip micro LED dies. ### Claim 7 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro semiconductor structures are vertical-electrode micro LED dies. ### Claim 8 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions connect the main bodies of the patterned micro semiconductor structures to the substrate body of the target substrate before each of the electrodes is eutectic bonded with corresponding one of the conductive portions of the target substrate. ### Claim 9 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein with respect to one of the electrodes, at least one of the micro contact protrusions is disposed surrounding the one of the electrodes. ### Claim 10 (depends on 1) The target substrate with micro semiconductor structures according to claim 1, wherein each of the electrodes is restricted by the micro contact protrusion to be beside the micro contact protrusion, directly contacted and eutectic bonded with corresponding one of the conductive portions of the target substrate excluding a solder between the electrode and the conductive portion. ### Claim 11 (depends on 10) The target substrate with micro semiconductor structures according to claim 10, wherein a space at the zone between the pair of the electrodes is fully filled with a corresponding one of the micro contact protrusions. ### Claim 12 A target substrate with micro semiconductor structures, comprising: a target substrate; a plurality of micro semiconductor structures disposed on the target substrate; and a first connecting element and a second connecting element connecting the micro semiconductor structures to the target substrate; wherein the target substrate has a substrate body and a plurality of conductive portions disposed on the substrate body, and each of the micro semiconductor structures comprises a main body and at least a pair of electrodes disposed on the main body; wherein the first connecting element excludes a solder and is formed from directly connecting and eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate; and wherein the second connecting element connects the main bodies of the micro semiconductor structures to the substrate body of the target substrate, and the second connecting element is formed by at least a micro contact protrusion, wherein with respect to the pair of the electrodes of one of the micro semiconductor structures, a zone is between the pair of the electrodes, at least one part of the second connecting element is beyond the zone and at a periphery of the pair of the electrodes; wherein each of the micro semiconductor structures is a single structure excluding semiconductor package. ### Claim 13 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein the micro contact protrusions are disposed around the corresponding conductive portions at the periphery of the pair of the electrodes. ### Claim 14 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein the micro contact protrusion is continuously or discontinuously disposed. ### Claim 15 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein with respect to the corresponding one of the conductive portions, the micro contact protrusion is disposed surrounding the corresponding one conductive portion. ### Claim 16 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein one part of the micro contact protrusions is disposed between the pair of the electrodes of each of the micro semiconductor structures. ### Claim 17 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein the second connecting element connects the main bodies of the micro semiconductor structures to the substrate body of the target substrate before the first connecting element is formed from eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate. ### Claim 18 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein the second connecting element is not disposed at the zone between the pair of the electrodes of each of the micro semiconductor structures. ### Claim 19 (depends on 12) The target substrate with micro semiconductor structures according to claim 12, wherein the first connecting element excludes a solder and is restricted by the second connecting element to be beside the second connecting element and formed from directly connecting and eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate. ### Claim 20 (depends on 19) The target substrate with micro semiconductor structures according to claim 19, wherein a space at the zone between the pair of the electrodes is fully filled with the second connecting element.