# US 10,872,789 B2 · Wafer cooling system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,789 B2 - Document ID: US10872789B2 - Status: Granted - Kind: B2 - Application number: 15/719,027 - Filed: 2017-09-28 - Published: 2019-03-28 - Granted: 2020-12-22 - Earliest claimed: 2017-09-28 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Otto Chen; Chia-Chih Chen - Web page: https://patentgrep.com/patent/US10872789B2 ## CPC - H10P 72/0434: {mainly by convection} - F25B 21/04: reversible - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0432: {mainly by conduction} - H10P 72/0466: {characterised by the construction of the load-lock chamber} - H10P 72/0602: {Temperature monitoring} - H10P 72/7621: {characterised by supporting two or more semiconductor substrates} - H10P 72/0606: {Position monitoring, e.g. misposition detection or presence detection} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - F25B: REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS ## Abstract The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock. ## Claims ### Claim 1 A wafer cooling system,comprising: a load-lock comprising: a wafer holder comprising vertically-stacked wafer slots each configured to receive a wafer from a front side of the load-lock; a gas diffuser disposed on a back side of the load-lock opposite to the front side, wherein the gas diffuser comprises vertically-stacked rows of nozzles, wherein each of the vertically-stacked rows of nozzles surrounds a perimeter of the wafer holder and positioned between adjacent vertically-stacked wafer slots; and a temperature control device configured to control a temperature of a gas provided to the gas diffuser. ### Claim 2 (depends on 1) The wafer cooling system of claim 1, wherein the gas diffuser is configured to release the gas through the vertically-stacked rows of nozzles in an area between the vertically-stacked wafer slots. ### Claim 3 (depends on 1) The wafer cooling system of claim 1, wherein the gas diffuser has an arcuate shape. ### Claim 4 (depends on 1) The wafer cooling system of claim 1, wherein the temperature control device comprises: a semiconductor material having a top surface and a bottom surface, wherein the top and the bottom surfaces are heated or cooled to different temperatures; a copper plate over the top and the bottom surfaces of the semiconductor material; and a ceramic plate over each copper plate. ### Claim 5 (depends on 1) The wafer cooling system of claim 1, wherein each of the vertically-stacked wafer slots comprises slats with flow sensors and temperature sensors thereon. ### Claim 6 (depends on 5) The wafer cooling system of claim 5, wherein the flow sensors are configured to measure a gas flow between about 2 ml/min and about 200 ml/min and between about 4 l/min and about 350 l/min. ### Claim 7 (depends on 5) The wafer cooling system of claim 5, wherein the temperature sensors are configured to measure a wafer temperature between about −150° C. and about 500° C. ### Claim 8 (depends on 1) The wafer cooling system of claim 1, wherein each of the vertically-stacked rows of nozzles is configured to dispense the gas at an angle between about 0.01° and about 89.9°. ### Claim 9 (depends on 1) The wafer cooling system of claim 1, wherein the temperature of the gas ranges from about −5° C. to about 50° C. ### Claim 10 (depends on 1) The wafer cooling system of claim 1, wherein the load-lock further comprises pressure sensors configured to measure a pressure between about 1×10−9 Torr and about 1000 Torr. ### Claim 11 (depends on 1) The wafer cooling system of claim 1, wherein the gas comprises helium, neon, argon, krypton, xenon, radon, or nitrogen. ### Claim 12 A wafer cooling system, comprising: a load-lock comprising: a wafer holder comprising wafer slots each configured to receive and hold a wafer in a horizontal position; a gas diffuser comprising diffuser rods arranged in an arcuate configuration around the wafer holder, wherein each diffuser rod comprises nozzles, wherein the nozzles face sidewalls of the wafer holder and positioned between the wafer slots; and exhaust lines disposed on a sidewall of the load-lock, wherein each exhaust line corresponds to a wafer slot in the wafer holder; and a temperature control device configured to provide temperature-controlled gas to the diffuser rods. ### Claim 13 (depends on 12) The wafer cooling system of claim 12, wherein the temperature-controlled gas comprises helium, neon, argon, krypton, xenon, radon, or nitrogen. ### Claim 14 (depends on 12) The wafer cooling system of claim 12, wherein the diffuser rods are configured to flow the temperature-controlled gas in a direction parallel to a surface of the wafers. ### Claim 15 (depends on 12) The wafer cooling system of claim 12, wherein the temperature control device is configured to provide the temperature-controlled gas at a temperature between about −50° C. to about 50° C. ### Claim 16 (depends on 12) The wafer cooling system of claim 12, wherein the wafer slots comprise slats with flow sensors configured to measure a wafer temperature and temperature sensors configured to measure a flow of the temperature-controlled gas. ### Claim 17 A wafer cooling system, comprising: a wafer holder configured to hold a stack of wafers; a gas diffuser having an arcuate shape and positioned adjacent to the wafer holder, wherein the gas diffuser comprises: rows of nozzles arranged in a semi-circular pattern around the stack of wafers, wherein each row of nozzles is positioned between adjacent wafers from the stack of wafers and is configured to release a gas on opposing surfaces of the adjacent wafers; and a thermo module configured to modulate a temperature of the gas, wherein the thermo module comprises: a semiconductor material comprising a first surface configured to heat the gas above room temperature and a second surface configured to cool the gas below room temperature; a copper plate over the first and second surfaces; and a ceramic plate over the copper plate. ### Claim 18 (depends on 17) The wafer cooling system of claim 17, wherein the thermo module is configured to modulate the temperature of the gas between about −50° C. and about 50° C. ### Claim 19 (depends on 17) The wafer cooling system of claim 17, wherein each nozzle is configured to release the gas at an angle between about 0.01° and about 89.9°. ### Claim 20 (depends on 17) The wafer cooling system of claim 17, wherein the wafer holder and the gas diffuser are disposed in a load-lock and the thermo module is disposed outside the load-lock.