# US 10,872,787 B2 · Apparatus for purging semiconductor process chamber slit valve opening

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- Number: US 10,872,787 B2
- Document ID: US10872787B2
- Status: Granted
- Kind: B2
- Application number: 16/136,055
- Filed: 2018-09-19
- Published: 2019-01-17
- Granted: 2020-12-22
- Earliest claimed: 2016-03-01
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Panya Wongsenakhum; Peter Krotov
- Web page: https://patentgrep.com/patent/US10872787B2

## CPC

- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- C23C 16/45519: {Inert gas curtains}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45563: {Gas nozzles}
- H01J 37/3244: {Gas supply means}
- H01J 37/32743: {for introducing the material into processing chamber}
- H01J 37/32899: {Multiple chambers, e.g. cluster tools}
- H10P 72/0441: {Apparatus for sealing, encapsulating, glassing, decapsulating or the like}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/0464: {characterised by the construction of the transfer chamber}
- H10P 72/33: {into and out of processing chamber}
- C23C 14/56: Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases}
- C23C 16/54: Apparatus specially adapted for continuous coating
- H01J 2237/3321: CVD [Chemical Vapor Deposition]
- H01J 2237/334: Etching
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A semiconductor processing chamber is provided and may include a wafer transfer passage that extends through a chamber wall and has an inner passage surface defining an opening, an insert including an insert inner surface defining an insert opening, and a gas inlet. A first recessed surface of the wafer transfer passage extending at least partially around and outwardly offset from the inner passage surface, a first insert outer surface extending at least partially around and outwardly offset from the insert inner surface, and a first wall surface extending between the inner passage surface and the first recessed surface, at least partially define a gas distribution channel fluidically connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance and an insert front surface faces and is separated from the first wall surface by a first gap distance.

## Claims

### Claim 1

A semiconductor processing chamber comprising:
a chamber wall that at least partially bounds the semiconductor processing chamber;
a gas inlet;
a wafer transfer passage that extends through the chamber wall along a first axis and that includes:
an inner passage surface that defines an opening perpendicular to the first axis,
a first recessed surface that extends at least partially around and is outwardly offset from the inner passage surface when viewed along the first axis, and
a first wall surface that extends between the inner passage surface and the first recessed surface; and
an insert that includes:
an insert inner surface that defines an insert opening perpendicular to the first axis,
a first insert outer surface that extends at least partially around and is outwardly offset from the insert inner surface when viewed along the first axis, and
an insert front surface that extends between the insert inner surface and the first insert outer surface,
wherein:
the first recessed surface, the first insert outer surface, and the first wall surface at least partially define a gas distribution channel,
the gas distribution channel is fluidically connected to the gas inlet,
the first recessed surface is outwardly offset from the first insert outer surface,
the insert front surface is offset from the first wall surface along the first axis,
the insert front surface is oriented at one of: a first oblique angle to the first axis, or perpendicular to the first axis, and
the first wall surface is oriented at one of: a second oblique angle to the first axis, or perpendicular to the first axis.

### Claim 2 (depends on 1)

The semiconductor processing chamber of claim 1, wherein the insert front surface and the first wall surface are parallel to each other.

### Claim 3 (depends on 1)

The semiconductor processing chamber of claim 1, wherein:
the insert front surface is oriented at the first oblique angle to the first axis, and the first wall surface is oriented at the second oblique angle to the first axis.

### Claim 4 (depends on 1)

The semiconductor processing chamber of claim 1, wherein:
the insert front surface is perpendicular to the first axis, and the first wall surface is oriented at the second oblique angle to the first axis.

### Claim 5 (depends on 1)

The semiconductor processing chamber of claim 1, wherein:
the insert front surface is oriented at the first oblique angle to the first axis, and the first wall surface is perpendicular to the first axis.

### Claim 6 (depends on 1)

The semiconductor processing chamber of claim 1, wherein both the insert front surface and the first wall surface are perpendicular to the first axis.

### Claim 7 (depends on 1)

The semiconductor processing chamber of claim 1, wherein:
the insert front surface and the insert inner surface meet at a first edge,
the first edge is rounded, sharp, or chamfered,
the first wall surface and the inner passage surface meet at a second edge, and
the second edge is rounded, sharp, or chamfered.

### Claim 8 (depends on 1)

The semiconductor processing chamber of claim 1, further comprising one or more spacers that extend from the insert front surface in a direction parallel to the first axis.

### Claim 9 (depends on 1)

The semiconductor processing chamber of claim 1, wherein the insert front surface and the first wall surface face each other.