# US 10,872,784 B2 · Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,784 B2 - Document ID: US10872784B2 - Status: Granted - Kind: B2 - Application number: 16/143,614 - Filed: 2018-09-27 - Published: 2019-05-16 - Granted: 2020-12-22 - Earliest claimed: 2017-11-16 - Assignees: Samsung Electronics Co., Ltd.; Wonik Materials - Applicants: Samsung Electronics Co., Ltd. - Inventors: Do-hoon Kim; Tae-hyung Kim; Jong-min Baek; Han-dock Song - Web page: https://patentgrep.com/patent/US10872784B2 ## CPC - H10P 50/71: {using masks for conductive or resistive materials} - C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) - H10B 12/482: {Bit lines} - H10P 50/242: {of Group IV materials} - H10P 50/268: {of silicon-containing layers} - H10P 50/283: {by chemical means} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10B: ELECTRONIC MEMORY DEVICES ## Abstract An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound. ## Claims ### Claim 1 An etching gas mixture, comprising: a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond, wherein the C1-C10 organosulfur compound that includes a C—S bond includes CFS, CF2S, CF3S, C2F4S2 (CAS No. 371-73-3), C2F4S2 (CAS No. 1717-50-6), C2F6S, C2F6S2, C2F6S3, C2F6S4, C2F8S (CAS No. 30341-38-9), C2F8S (CAS No. 1186-51-2), C2F10S (CAS No. 42179-02-2), C2F10S (CAS No. 354-67-6), C3F6S3, C4F16S2, C4F6S (CAS No. 7445-60-5), C4F6S (CAS No. 380-40-5), C4F6S2, C4F8S (CAS No. 706-76-3), C4F8S (CAS No. 2261-43-0), or C6F16S. ### Claim 2 (depends on 1) The etching gas mixture as claimed in claim 1, wherein the C1-C3 perfluorinated alkyl hypofluorite includes trifluoromethyl hypofluorite (CF3OF). ### Claim 3 (depends on 1) The etching gas mixture as claimed in claim 1, wherein the etching gas mixture includes: 10 vol % to 99 vol % of the C1-C3 perfluorinated alkyl hypofluorite, and 1 vol % to 90 vol % of the C1-C10 organosulfur compound, all vol % being based on a total volume of the etching gas mixture. ### Claim 4 (depends on 1) The etching gas mixture as claimed in claim 1, further comprising an inert gas. ### Claim 5 (depends on 4) The etching gas mixture as claimed in claim 4, wherein the etching gas mixture includes: 10 vol % to 99 vol % of the C1-C3 perfluorinated alkyl hypofluorite, 0.1 vol % to 90 vol % of the C1-C10 organosulfur compound, and 0.0001 vol % to 10 vol % of the inert gas, all vol % being based on a total volume of the etching gas mixture. ### Claim 6 (depends on 1) A method of forming a pattern, the method comprising etching a thin layer using the etching gas mixture as claimed in claim 1. ### Claim 7 (depends on 6) The method as claimed in claim 6, wherein the thin layer includes a silicon-containing layer. ### Claim 8 (depends on 6) The method as claimed in claim 6, wherein, in the etching gas mixture: the C1-C3 perfluorinated alkyl hypofluorite includes CF3OF. ### Claim 9 (depends on 6) The method as claimed in claim 6, wherein: the etching gas mixture further includes an inert gas, and the C1-C3 perfluorinated alkyl hypofluorite includes CF3OF. ### Claim 10 (depends on 1) A method of forming a pattern, the method comprising: forming an etch mask pattern on a thin layer such that the etch mask pattern includes an opening; forming a sulfur-containing passivation layer that covers the etch mask pattern by etching a portion of the thin layer through the opening by using plasma obtained from the etching gas mixture as claimed in claim 1; and forming a thin layer pattern by further etching the thin layer through the opening by using the etch mask pattern and the sulfur-containing passivation layer as an etch mask and by using the plasma obtained from the etching gas mixture. ### Claim 11 (depends on 10) The method as claimed in claim 10, wherein, in the etching gas mixture: the C1-C3 perfluorinated alkyl hypofluorite includes CF3OF. ### Claim 12 (depends on 10) The method as claimed in claim 10, wherein forming the sulfur-containing passivation layer and forming the thin layer pattern are performed in-situ in one reaction chamber. ### Claim 13 (depends on 10) The method as claimed in claim 10, wherein the sulfur-containing passivation layer includes an organic polymer including a C—S bond. ### Claim 14 (depends on 1) A method of manufacturing an integrated circuit device, the method comprising: forming a structure on a substrate such that the structure includes a silicon-containing thin layer; forming a photoresist pattern on the structure such that the photoresist pattern includes a plurality of openings; forming a sulfur-containing passivation layer covering the photoresist pattern by etching a portion of the silicon-containing thin layer through the plurality of openings by using plasma obtained from the etching gas mixture as claimed in claim 1; and forming a thin layer pattern by further etching the silicon-containing thin layer through the plurality of openings by using the photoresist pattern and the sulfur-containing passivation layer as an etch mask and by using the plasma obtained from the etching gas mixture. ### Claim 15 (depends on 14) The method as claimed in claim 14, wherein: the photoresist pattern includes a plurality of photoresist line patterns that extend in parallel, and the thin layer pattern includes a plurality of line patterns. ### Claim 16 (depends on 14) The method as claimed in claim 14, wherein: the C1-C3 perfluorinated alkyl hypofluorite includes CF3OF, and the etching gas mixture includes: 10 vol % to 99 vol % of the CF3OF, and 1 vol % to 90 vol % of the C1-C10 organosulfur compound, all vol % being based on a total volume of the etching gas mixture. ### Claim 17 (depends on 14) The method as claimed in claim 14, wherein: the C1-C3 perfluorinated alkyl hypofluorite includes CF3OF, the etching gas mixture further includes an inert gas, and the etching gas mixture includes: 10 vol % to 99 vol % of the CF3OF, 0.1 vol % to 90 vol % of the C1-C10 organosulfur compound, and 0.0001 vol % to 10 vol % of the inert gas, all vol % being based on a total volume of the etching gas mixture.