# US 10,872,782 B2 · Method of manufacturing semiconductor device

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- Number: US 10,872,782 B2
- Document ID: US10872782B2
- Status: Granted
- Kind: B2
- Application number: 16/561,909
- Filed: 2019-09-05
- Published: 2020-09-17
- Granted: 2020-12-22
- Earliest claimed: 2019-03-15
- Assignees: Toshiba Memory Corporation
- Applicants: Toshiba Memory Corporation
- Inventors: Yuya Matsubara; Hiroshi Kubota
- Web page: https://patentgrep.com/patent/US10872782B2

## CPC

- H10P 50/73: {using masks for insulating materials}
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10D 64/037: {comprising charge-trapping insulators}
- H10P 50/283: {by chemical means}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more. The method further includes etching the stacked film using the mask layer as an etching mask.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
forming a stacked film on a substrate;
forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×1020 atoms/cm3 or more; and
etching the stacked film using the mask layer as an etching mask.

### Claim 2 (depends on 1)

The method of claim 1, wherein the tungsten compound includes tungsten, and includes at least any of boron and carbon.

### Claim 3 (depends on 2)

The method of claim 2, wherein the tungsten compound is a WB alloy, a WC alloy or a WBC alloy where W denotes tungsten, B denotes boron, and C denotes carbon.

### Claim 4 (depends on 1)

The method of claim 1, wherein the mask layer is formed using a gas that includes tungsten atoms and the impurity atoms.

### Claim 5 (depends on 4)

The method of claim 4, wherein the mask layer is formed further using at least any of a gas including boron atoms and a gas including carbon atoms.

### Claim 6 (depends on 5)

The method of claim 5, wherein a flow rate of the gas including boron atoms is set to be less than 100 sccm.

### Claim 7 (depends on 1)

The method of claim 1, wherein the mask layer includes the impurity atoms having the concentration of 1.0×1020 atoms/cm3 or more and 4.0×1020 atoms/cm3 or less.

### Claim 8 (depends on 1)

The method of claim 1, wherein the mask layer includes the impurity atoms having the concentration of 2.0×1020 atoms/cm3 or more.

### Claim 9 (depends on 1)

The method of claim 1, wherein the mask layer is an amorphous film.

### Claim 10 (depends on 1)

The method of claim 1, wherein a thickness of the mask layer is 1 to 3 μm.

### Claim 11 (depends on 1)

The method of claim 1, wherein the mask layer is formed under a pressure of 10 Torr or less.

### Claim 12 (depends on 1)

The method of claim 1, further comprising removing the mask layer on the stacked film after etching the stacked film using the mask layer as the etching mask.

### Claim 13 (depends on 1)

The method of claim 1, wherein the impurity atoms are halogen atoms.

### Claim 14 (depends on 13)

The method of claim 13, wherein the halogen atoms are fluorine atoms or chlorine atoms.

### Claim 15 (depends on 1)

The method of claim 1, wherein the impurity atoms are doped into the mask layer in forming the mask layer on the stacked film.

### Claim 16 (depends on 1)

The method of claim 1, wherein the stacked film includes a plurality of first layers and a plurality of second layers that are alternately formed on the substrate.

### Claim 17 (depends on 16)

The method of claim 16, wherein the first layers are insulating layers, and the second layers are insulating layers different from the first layers.

### Claim 18 (depends on 16)

The method of claim 16, further comprising sequentially forming a charge storage layer and a semiconductor layer in a concave portion formed in the stacked film by the etching.

### Claim 19 (depends on 18)

The method of claim 18, further comprising:
forming a plurality of cavities between the first layers by removing the second layers after sequentially forming the charge storage layer and the semiconductor layer in the concave portion; and
forming a plurality of third layers in the cavities.

### Claim 20 (depends on 19)

The method of claim 19, wherein the third layers are electrode layers.