# US 10,872,780 B2 · Dry etching agent composition and dry etching method

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- Number: US 10,872,780 B2
- Document ID: US10872780B2
- Status: Granted
- Kind: B2
- Application number: 16/341,695
- Filed: 2017-10-23
- Published: 2019-09-19
- Granted: 2020-12-22
- Earliest claimed: 2016-11-28
- Assignees: Central Glass Company, Limited
- Applicants: Central Glass Company, Limited
- Inventors: Hiroyuki Oomori; Akifumi Yao; Isamu Mori
- Web page: https://patentgrep.com/patent/US10872780B2

## CPC

- H10P 50/283: {by chemical means}
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- H10P 50/242: {of Group IV materials}
- C09K 2205/126: Unsaturated fluorinated hydrocarbons
- C09K 2205/128: Perfluorinated hydrocarbons (C09K2205/124, C09K2205/126 take precedence)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234ze without losing excellent etching characteristics of HFO-1234ze.

## Claims

### Claim 1

A dry etching agent composition, comprising:
1,3,3,3-tetrafluoropropene; and
a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4),
wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and
wherein the hydrochlorofluorocarbon is chlorodifluoromethane.

### Claim 2 (depends on 1)

The dry etching agent composition according to claim 1, wherein a concentration of the hydrochlorofluorocarbon in the dry etching agent composition is 3 volume ppm or greater to less than 1000 volume ppm.

### Claim 3 (depends on 1)

A storage container comprising a dry etching agent composition of claim 1.

### Claim 4 (depends on 3)

The storage container according to claim 3, wherein, relative to 1,3,3,3-tetrafluoropropene, 10 volume ppm or greater to 10000 volume ppm or less of oxygen is contained, and 1 volume ppm or greater to 10000 volume ppm or less of water is contained in the storage container.

### Claim 5 (depends on 1)

A dry etching method, comprising the steps of:
converting a dry etching agent composition according to claim 1 to plasma; and
etching silicon oxide or silicon nitride by using plasma gas converted into plasma.

### Claim 6 (depends on 5)

The dry etching method according to claim 5, wherein the concentration of the hydrochlorofluorocarbon in the dry etching agent is 3 volume ppm or greater to less than 1000 volume ppm.

### Claim 7 (depends on 5)

The dry etching method according to claim 5, wherein, relative to 1,3,3,3-tetrafluoropropene, 10 volume ppm or greater to 10000 volume ppm or less of oxygen is contained and 1 volume ppm or greater to 10000 volume ppm or less of water is contained in the dry etching agent.

### Claim 8 (depends on 5)

The dry etching method according to claim 5, wherein the etching agent contains an additive gas, and
wherein the additive gas is at least one gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, CF2(OF)2, CF3OF, NO2, NO, F2, NF3, Cl2, Br2, I2 and XFn (wherein, in a formula, X represents Cl, Br, or I, n is an integer, and 1≤n≤7).

### Claim 9 (depends on 5)

The dry etching method according to claim 5, wherein the dry etching agent further contains an inert gas, and
wherein the inert gas is at least one gas selected from the group consisting of N2, He, Ar, Ne, Kr and Xe.