# US 10,872,774 B2 · Plasma processing apparatus and plasma processing method

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- Number: US 10,872,774 B2
- Document ID: US10872774B2
- Status: Granted
- Kind: B2
- Application number: 16/286,303
- Filed: 2019-02-26
- Published: 2020-01-30
- Granted: 2020-12-22
- Earliest claimed: 2018-07-24
- Assignees: Hitachi High-Tech Corporation
- Applicants: Hitachi High-Tech Corporation
- Inventors: Hao Xu; Hiroshige Uchida; Shigeru Nakamoto; Kousuke Fukuchi; Satomi Inoue
- Web page: https://patentgrep.com/patent/US10872774B2

## CPC

- H10P 50/242: {of Group IV materials}
- H01J 37/226: {Optical arrangements for illuminating the object; optical arrangements for collecting light from the object}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32715: {Workpiece holder}
- H10P 14/6514: {by exposure to a plasma}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/6538: {by exposure to UV light}
- H10P 50/267: {using plasmas}
- H10W 20/0523: {by irradiating with ultraviolet or particle radiation}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H01J 2237/3343: Problems associated with etching
- H10P 72/0421: {for drying etching}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.

## Claims

### Claim 1

A plasma processing apparatus comprising:
a processing chamber in which a sample is subjected to plasma processing;
a radio frequency power supply supplying radio frequency power that generates plasma;
a sample stage on which the sample is placed;
an ultraviolet light source applying an ultraviolet ray; and
a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber,
wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, and
wherein the controller is configured to control the ultraviolet light source each that before the direct current voltage is applied to the electrode, the pulse-modulated ultraviolet ray is applied into the process chamber.

### Claim 2 (depends on 1)

The plasma processing apparatus according to claim 1,
wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to the sample.

### Claim 3 (depends on 2)

The plasma processing apparatus according to claim 2,
wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to a negatively charged region of a sample electrostatically chucked to the sample stage.

### Claim 4

A plasma processing apparatus comprising:
a processing chamber in which a sample is subjected to plasma processing;
a radio frequency power supply supplying radio frequency power that generates plasma;
a sample stage on which the sample is placed;
an ultraviolet light source applying an ultraviolet ray; and
a controller configured to control the radio frequency power supply and the ultraviolet light source such that the radio frequency power is supplied into the processing chamber and a pulse-modulated ultraviolet ray is applied into the processing chamber,
wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, and
wherein the controller is configured to control the ultraviolet light source each that before the direct current voltage is applied to the electrode, the pulse-modulated ultraviolet ray is applied into the process chamber.

### Claim 5 (depends on 4)

The plasma processing apparatus according to claim 4,
wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to the sample.

### Claim 6

A plasma processing method of processing a sample in a processing chamber using plasma generated by radio frequency power, the method comprising:
before radio frequency power is supplied into the processing chamber, applying a pulse-modulated ultraviolet ray into the processing chamber; and
after the pulse-modulated ultraviolet ray is applied into the processing chamber, applying a direct current voltage to an electrode of a sample stage to electrostatically chuck said sample using the direct current voltage.