# US 10,872,770 B2 · Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt

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- Number: US 10,872,770 B2
- Document ID: US10872770B2
- Status: Granted
- Kind: B2
- Application number: 15/819,620
- Filed: 2017-11-21
- Published: 2018-06-07
- Granted: 2020-12-22
- Earliest claimed: 2016-11-23
- Assignees: Entegris, Inc.
- Applicants: Entegris, Inc.
- Inventors: Sangbum Han; Seobong Chang; Jaeeon Park; Bryan Clark Hendrix; Thomas H. Baum
- Web page: https://patentgrep.com/patent/US10872770B2

## CPC

- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- C07F 15/06: Cobalt compounds
- C23C 16/06: characterised by the deposition of metallic material
- C23C 16/16: from metal carbonyl compounds
- C23C 16/18: from metallo-organic compounds
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

## Claims

### Claim 1

A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of formula Co2(CO)6(R3C≡CR4), wherein R3 is a cyclic alkyl moiety or an aryl moiety and is free of halogen atoms and R4 is a fluoroalkyl or fluoroaryl moiety.

### Claim 2 (depends on 1)

A precursor or precursor composition according to claim 1, wherein R4 is —CF3.

### Claim 3 (depends on 1)

A precursor or precursor composition according to claim 1, wherein R4 is selected from the group consisting of —CF3, —C2F5, and —C6F5 moieties.

### Claim 4 (depends on 1)

A precursor or precursor composition according to claim 1, wherein R3 is an aryl moiety.

### Claim 5 (depends on 1)

A precursor or precursor composition according to claim 1, wherein the precursor has a boiling point in the range of from 50° C. to 100° C.

### Claim 6 (depends on 1)

A precursor or precursor composition according to claim 1 having a molecular purity of the bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of 99% or greater.

### Claim 7

A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of formula Co2(CO)6(R3C≡CR4), wherein R3 is a cyclic alkyl or an aryl moiety and is free of halogen atoms and R4 is an electron withdrawing organic moiety relative to R3 comprising one or more halogen atoms.

### Claim 8 (depends on 7)

A precursor or precursor composition according to claim 7, wherein R4 is a haloalkyl or haloaryl moiety.