# US 10,872,765 B2 · Selective layer formation using deposition and removing

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- Number: US 10,872,765 B2
- Document ID: US10872765B2
- Status: Granted
- Kind: B2
- Application number: 16/399,328
- Filed: 2019-04-30
- Published: 2019-11-07
- Granted: 2020-12-22
- Earliest claimed: 2018-05-02
- Assignees: ASM IP Holding B.V.
- Applicants: Asm IP Holding B.V.
- Inventors: Eva Tois; Viljami Pore
- Web page: https://patentgrep.com/patent/US10872765B2

## CPC

- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/40: Oxides
- C23C 16/407: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}
- C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/61: using masks
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6687: {the compound comprising silicon and nitrogen}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6938: {the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides}
- H10P 14/6939: {characterised by the metal}
- H10P 95/08: {Planarisation of organic insulating materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

## Claims

### Claim 1

An atomic layer deposition (ALD) process for selectively forming a dielectric material on a first surface of a patterned substrate, comprising:
providing a substrate comprising a first surface and a second surface, wherein the second surface comprises a passivation layer thereover;
conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant comprising oxygen;
wherein the second reactant reacts with the first precursor to form a dielectric material on the first surface; and
wherein the passivation layer is ashed by the second reactant during each deposition cycle.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first surface is a dielectric surface.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first surface comprises a low-k material.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second surface is a metal surface.

### Claim 5 (depends on 1)

The method of claim 1, wherein the dielectric material comprises silicon oxide.

### Claim 6 (depends on 1)

The method of claim 1, wherein the dielectric material comprises a metal oxide.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first precursor is an alkylaminosilane.

### Claim 8 (depends on 1)

The method of claim 1, wherein the passivation layer comprises an organic material.

### Claim 9 (depends on 1)

The method of claim 1, wherein the passivation layer is selectively deposited on the second surface relative to the first surface prior to beginning the first deposition cycle.

### Claim 10 (depends on 1)

The method of claim 1, wherein the deposition cycle is repeated a plurality of times to form an oxide film of a desired thickness on the dielectric surface.

### Claim 11 (depends on 10)

The method of claim 10, further comprising the selective deposition of additional passivation layer to the passivation layer between the beginning and end of each deposition cycle.

### Claim 12 (depends on 1)

The method of claim 1, wherein the at least one deposition cycle begins with contacting the substrate with the second reactant before contact with the first precursor.

### Claim 13 (depends on 1)

The method of claim 1, wherein contacting the substrate with the second reactant further comprises activating the second reactant with plasma.

### Claim 14 (depends on 1)

The method of claim 1, wherein the dielectric material is selectively formed on the first surface relative to the passivation layer.

### Claim 15 (depends on 1)

The method of claim 1, wherein the dielectric material is formed on the passivation layer and wherein the dielectric material is removed from the passivation layer with the ashing of the passivation layer, thereby selectively forming the dielectric material on the first surface.

### Claim 16

A cyclical deposition process for selectively a forming a material on a surface of a patterned substrate, comprising:
providing a substrate comprising a first surface and a second surface, wherein the second surface comprises a passivation layer thereover;
conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant;
wherein the second reactant reacts with the first precursor to form the material on the first surface; and
wherein the passivation layer is etched by the second reactant during each deposition cycle.

### Claim 17 (depends on 16)

The cyclical deposition process of claim 16, wherein the second reactant comprises plasma-activated species.

### Claim 18 (depends on 17)

The cyclical deposition process of claim 17, wherein the second reactant comprises oxygen, the passivation layer comprises an organic layer, and etching comprises ashing.

### Claim 19 (depends on 16)

The cyclical deposition process of claim 16, wherein deposition is halted before the etching of the passivation layer exposes the second surface.

### Claim 20 (depends on 19)

The cyclical deposition process of claim 19, further comprising further depositing additional passivation layer over the second surface after halting the deposition and prior to continuing the deposition.

### Claim 21

A plasma enhanced atomic layer deposition (PEALD) process for selectively forming an oxide material on a first dielectric surface of a patterned substrate, comprising:
providing a substrate comprising a first dielectric surface and a second metallic surface, wherein the second metallic surface comprises an organic passivation layer thereover;
conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant comprising oxygen and plasma;
wherein the second reactant reacts with the first precursor to form an oxide material on the first dielectric surface; and
wherein the organic passivation layer is ashed by the second reactant during each deposition cycle.