# US 10,872,759 B2 · Silicon carbide single crystal substrate and method for manufacturing the same

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- Number: US 10,872,759 B2
- Document ID: US10872759B2
- Status: Granted
- Kind: B2
- Application number: 15/509,020
- Filed: 2015-06-24
- Published: 2017-09-07
- Granted: 2020-12-22
- Earliest claimed: 2014-09-08
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Kyoko Okita; Tsubasa Honke
- Web page: https://patentgrep.com/patent/US10872759B2

## CPC

- H10P 90/18: {by shaping}
- B24B 1/00: Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B 9/00: Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor (B24B21/00 takes precedence; for sharpening cutting edges on tools B24B3/00; removing burrs by loose abrasive material B24B31/00)
- B24B 9/065: {of thin, brittle parts, e.g. semiconductors, wafers}
- B24B 19/22: characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24D 3/28: Resins {or natural or synthetic macromolecular compounds (B24D3/22 takes precedence)}
- B24D 5/02: Wheels in one piece
- C30B 29/36: Carbides
- C30B 29/64: Flat crystals, e.g. plates, strips or discs
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- H10D 62/8325: {Silicon carbide}
- H10P 90/123: {by grinding or lapping}
- H10P 90/128: {by edge treatment, e.g. chamfering}
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- H10D 62/405: {Orientations of crystalline planes}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

## Claims

### Claim 1

A silicon carbide single crystal substrate, comprising:
a first main surface;
a second main surface opposite to the first main surface; and
a circumferential edge portion connecting the first main surface and the second main surface,
the circumferential edge portion having a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the linear orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface,
wherein the second radius is more than or equal to 50 μm and less than or equal to 1000 μm,
wherein a material constituting the silicon carbide single crystal substrate is hexagonal silicon carbide,
the linear orientation flat portion is located in a [1-100] direction with respect to a center of gravity of the silicon carbide single crystal substrate, and
wherein the linear orientation flat portion has a length which extends in a first direction perpendicular to the [1-100] direction from a top view, and has a height which extends in a second direction perpendicular to the [1-100] direction from the top view.

### Claim 2 (depends on 1)

The silicon carbide single crystal substrate according to claim 1, wherein the second radius is less than or equal to 500 μm.

### Claim 3 (depends on 1)

The silicon carbide single crystal substrate according to claim 1, wherein the first main surface has a maximum diameter range of more than or equal to 100 mm and less than or equal to 200 mm.