# US 10,872,748 B2 · Systems and methods for correcting non-uniformities in plasma processing of substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,872,748 B2 - Document ID: US10872748B2 - Status: Granted - Kind: B2 - Application number: 16/506,456 - Filed: 2019-07-09 - Published: 2019-12-05 - Granted: 2020-12-22 - Earliest claimed: 2011-09-16 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Harmeet Singh; Keith Gaff; Brett Richardson; Sung Lee - Web page: https://patentgrep.com/patent/US10872748B2 ## CPC - H01J 37/32669: {Particular magnets or magnet arrangements for controlling the discharge} - H01J 37/32715: {Workpiece holder} - H10P 50/283: {by chemical means} - H10P 72/0421: {for drying etching} - H01F 7/20: without armatures (cores H01F3/00; coils H01F5/00 {; shaping metal by applying magnetic forces B21D26/14; electromagnets specially adapted for NMR applications G01R33/381}) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ## Abstract An electrostatic chuck includes an embedded electrode receiving a first voltage to electrostatically attract a semiconductor substrate to the electrostatic chuck. A plurality of current loops are disposed in at least one of the electrostatic chuck and an edge ring surrounding the electrostatic chuck. The current loops are laterally spaced apart. Each current loop is a wire formed into a loop. One or more DC power sources are electrically connected to the current loops. A controller supplies the first voltage to the embedded electrode, supplies a DC current to the current loops from the power sources, and controls the power sources. Each current loop is independently operable and generates a localized DC magnetic field proximate to the semiconductor substrate on receiving the DC current during plasma processing of the semiconductor substrate to adjust the plasma processing of the semiconductor substrate. The localized DC magnetic field does not generate plasma. ## Claims ### Claim 1 A system comprising: an electrostatic chuck including an embedded electrode receiving a first voltage to electrostatically attract a semiconductor substrate to the electrostatic chuck; and a plurality of current loops disposed in at least one of the electrostatic chuck and an edge ring surrounding the electrostatic chuck, wherein the plurality of current loops are laterally spaced apart, and wherein each of the plurality of current loops is a wire formed into a loop; one or more DC power sources electrically connected to the plurality of current loops; and a controller configured to: supply the first voltage to the embedded electrode; supply a DC current to the plurality of current loops from the one or more DC power sources; and control the one or more DC power sources such that each of the plurality of current loops is independently operable and generates a localized DC magnetic field proximate to the semiconductor substrate on receiving the DC current during plasma processing of the semiconductor substrate to adjust the plasma processing of the semiconductor substrate, wherein the localized DC magnetic field generated by the plurality of current loops does not generate plasma. ### Claim 2 (depends on 1) The system of claim 1 wherein the localized DC magnetic field generated by the plurality of current loops adjusts an etch rate during the plasma processing of the semiconductor substrate. ### Claim 3 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to one or more of the plurality of current loops in response to detecting an etch rate non-uniformity during the plasma processing of the semiconductor substrate. ### Claim 4 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to one or more of the plurality of current loops initially in a first direction and subsequently in a second direction that is opposite of the first direction. ### Claim 5 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to the plurality of current loops in the same direction. ### Claim 6 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to the plurality of current loops in different directions. ### Claim 7 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to the plurality of current loops at the same time. ### Claim 8 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to the plurality of current loops at different times. ### Claim 9 (depends on 1) The system of claim 1 wherein the controller is configured to supply the same amount of the DC current to the plurality of current loops. ### Claim 10 (depends on 1) The system of claim 1 wherein the controller is configured to supply different amounts of the DC current to the plurality of current loops. ### Claim 11 (depends on 1) The system of claim 1 wherein the controller is configured to supply the DC current to the plurality of current loops using a multiplexing scheme. ### Claim 12 (depends on 1) The system of claim 1 wherein the plurality of current loops are embedded in a baseplate of the electrostatic chuck. ### Claim 13 (depends on 1) The system of claim 1 wherein the plurality of current loops are embedded in a ceramic plate of the electrostatic chuck. ### Claim 14 (depends on 1) The system of claim 1 wherein the plurality of current loops are electrically isolated from the embedded electrode. ### Claim 15 (depends on 1) The system of claim 1 wherein the plurality of current loops are electrically insulated. ### Claim 16 (depends on 1) The system of claim 1 wherein the plurality of current loops lie in a plane parallel to the semiconductor substrate. ### Claim 17 (depends on 1) The system of claim 1 wherein the plurality of current loops in the electrostatic chuck and in the edge ring are not planar with respect to each other. ### Claim 18 (depends on 1) The system of claim 1 wherein the plurality of current loops in the electrostatic chuck and in the edge ring are not planar with respect to the semiconductor substrate. ### Claim 19 (depends on 1) The system of claim 1 wherein the plurality of current loops extend less than halfway around the electrostatic chuck or the edge ring. ### Claim 20 (depends on 1) The system of claim 1 wherein a periphery of each current loop of the plurality of current loops is laterally offset from a periphery of an adjacent current loop of the plurality of current loops. ### Claim 21 (depends on 1) The system of claim 1 wherein the plurality of current loops have the same size and shape. ### Claim 22 (depends on 1) The system of claim 1 wherein the plurality of current loops have different sizes and shapes. ### Claim 23 (depends on 1) The system of claim 1 wherein at least one of the plurality of current loops has a circular, semi-circular, oval, semi-oval, square, rectangular, trapezoidal, triangular, or polygonal shape. ### Claim 24 (depends on 1) The system of claim 1 wherein at least one of the plurality of current loops comprises a single turn. ### Claim 25 (depends on 1) The system of claim 1 wherein at least one of the plurality of current loops comprises a plurality of turns.