# US 10,871,843 B2 · Bonding area structure, method of manufacturing the same, panel and touch display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,871,843 B2 - Document ID: US10871843B2 - Status: Granted - Kind: B2 - Application number: 16/316,531 - Filed: 2018-02-09 - Published: 2019-08-01 - Granted: 2020-12-22 - Earliest claimed: 2017-03-06 - Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; BOE Technology Group Co., Ltd. - Inventors: Li Ma; Yichuan Tan - Web page: https://patentgrep.com/patent/US10871843B2 ## CPC - G06F 3/0412: {Digitisers structurally integrated in a display} - G02F 1/13338: {Input devices, e.g. touch panels} - G02F 1/133512: {Light shielding layers, e.g. black matrix (G02F1/136209 takes precedence)} - G02F 1/13394: {spacers regularly patterned on the cell subtrate, e.g. walls, pillars (G02F1/133377 takes precedence)} - G02F 1/1343: Electrodes {(reflective electrodes G02F1/133553)} - G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) - G06F 3/041: Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means - G06F 3/044: by capacitive means - H05K 3/064: {Photoresists} - G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract A bonding area structure and a method of manufacturing the same, a panel and a touch display device are provided, the bonding area structure includes a substrate; a light blocking layer on a surface of the substrate; a patterned electrode on a side of the light blocking layer away from the substrate; a metal connection portion on a surface of the patterned electrode away from the light blocking layer for bonding with an external circuit; and an etch barrier on a side of the light blocking layer away from the substrate and at least in a region where no patterned electrode is disposed so as to cover a portion of the light blocking layer exposed by the patterned electrode. ## Claims ### Claim 1 A bonding area structure, located in a peripheral region of a panel including an intermediate region and the peripheral region, the peripheral region surrounding the intermediate region, wherein the bonding area structure comprises: a substrate; a light blocking layer on a surface of the substrate; a patterned electrode on a side of the light blocking layer away from the substrate; a metal connection portion on a surface of the patterned electrode away from the light blocking layer for bonding with an external circuit; and an etch barrier on a side of the light blocking layer away from the substrate and at least in a region where no patterned electrode is disposed so as to cover a portion of the light blocking layer exposed by the patterned electrode, wherein an orthographic projection of the etch barrier on the substrate does not overlap with an orthographic projection of the metal connection portion on the substrate, wherein a height of the etch barrier is greater than a height of the patterned electrode adjacent to the etch barrier, and a top surface of the etch barrier is higher than a top surface of the metal connection portion, wherein a difference between the height of the etch barrier and the sum of the height of the patterned electrode and a height of the metal connection portion does not exceed 7% of the height of the metal connection portion. ### Claim 2 (depends on 1) The bonding area structure according to claim 1, wherein the metal connection portion exposes at least a portion of the patterned electrode to form a step between the metal connection portion and the patterned electrode, and the etch barrier covers the step. ### Claim 3 (depends on 1) The bonding area structure according to claim 1, wherein the etch barrier is formed of photoresist. ### Claim 4 (depends on 1) The bonding area structure according to claim 1, wherein the patterned electrode is a transparent electrode. ### Claim 5 (depends on 4) The bonding area structure according to claim 4, wherein the transparent electrode comprises ITO. ### Claim 6 (depends on 4) The bonding area structure according to claim 4, wherein the transparent electrode comprises a metal mesh. ### Claim 7 (depends on 1) A panel comprising the bonding area structure according to claim 1. ### Claim 8 (depends on 7) The panel according to claim 7, wherein the panel is a touch panel comprising a touch electrode, and the patterned electrode and the touch electrode are disposed in the same layer and formed of the same material. ### Claim 9 (depends on 8) A touch display device comprising the panel according to claim 8. ### Claim 10 A method of manufacturing a bonding area structure, wherein the bonding area structure is located in a peripheral region of a panel including an intermediate region and the peripheral region, and the peripheral region surrounds the intermediate region of the panel, wherein the method comprises: coating a substrate with a light shielding material to form a light blocking layer; depositing a conductive layer on a side of the light blocking layer away from the substrate, and forming a patterned electrode by a first patterning process; depositing a metal layer on the substrate on which the patterned electrode is formed, and forming a metal connection portion disposed on the patterned electrode by a second patterning process; and coating the substrate on which the metal connection portion is formed with photoresist, and forming an etch barrier on a side of the light blocking layer away from the substrate and in a region where no patterned electrode is disposed by a third patterning process, the etch barrier covering at least a portion of the light blocking layer exposed by the patterned electrode, wherein an orthographic projection of the etch barrier on the substrate does not overlap with an orthographic projection of the metal connection portion on the substrate, wherein a height of the etch barrier is greater than a height of the patterned electrode adjacent to the etch barrier, and a top surface of the etch harrier is higher than a top surface of the metal connection portion, wherein a difference between the height of the etch barrier and the sum of the height of the patterned electrode and a height of the metal connection portion does not exceed 7% of the height of the metal connection portion. ### Claim 11 (depends on 10) The method according to claim 10, wherein the method further comprises: coating the entire panel including the bonding area structure with an index matching layer; and removing a portion of the index matching layer on the bonding area structure by a fourth patterning process to expose the metal connection portion. ### Claim 12 A method of manufacturing a bonding area structure, wherein the bonding area structure is located in a peripheral region of a panel including an intermediate region and the peripheral region, and the peripheral region surrounds the intermediate region of the panel, wherein the method comprises: coating a substrate with a light shielding material to form a light blocking layer; depositing a conductive layer and a metal layer on a side of the light blocking layer away from the substrate in sequence, and forming a patterned electrode and a metal connection portion disposed on the patterned electrode by a single patterning process; and coating the substrate on which the metal connection portion is formed with photoresist, and forming an etch barrier on a side of the light blocking layer away from the substrate and in a region where no patterned electrode is disposed by a third patterning process, the etch barrier covering at least a portion of the light blocking layer exposed by the patterned electrode, wherein an orthographic projection of the etch barrier on the substrate does not overlap with an orthographic projection of the metal connection portion on the substrate, wherein a height of the etch barrier is greater than a height of the patterned electrode adjacent to the etch barrier, and a top surface of the etch barrier is higher than a top surface of the metal connection portion, wherein a difference between the height of the etch barrier and the sum of the height of the patterned electrode and a height of the metal connection portion does not exceed 7% of the height of the metal connection portion. ### Claim 13 (depends on 12) The method according to claim 12, wherein the method further comprises: coating the entire panel including the bonding area structure with an index matching layer; and removing a portion of the index matching layer on the bonding area structure by a fourth patterning process to expose the metal connection portion.