# US 10,871,685 B2 · Array substrate and manufacturing method thereof, and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,871,685 B2 - Document ID: US10871685B2 - Status: Granted - Kind: B2 - Application number: 16/335,995 - Filed: 2018-05-23 - Published: 2019-08-29 - Granted: 2020-12-22 - Earliest claimed: 2017-08-31 - Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; BOE Technology Group Co., Ltd. - Inventors: Binbin Cao; Li Ai; Hui Zhang - Web page: https://patentgrep.com/patent/US10871685B2 ## CPC - G02F 1/133555: {Transflectors} - G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making} - G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)} - G02F 1/133553: {Reflecting elements (associated to illuminating devices G02F1/133605)} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/0212: {comprising manufacture, treatment or coating of substrates} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/707: {of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate} - G02F 1/133371: {Cells with varying thickness of the liquid crystal layer} - G02F 1/136236: {using a grey or half tone lithographic process} - G02F 2201/123: pixel - G02F 2202/36: Micro- or nanomaterials - G02F 2203/09: transflective - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An array substrate, a manufacturing method thereof and a display device are provided. The array substrate includes: a base substrate, a reflection region layered structure and a reflection electrode. The base substrate includes a pixel region, the pixel region includes a reflection region. The reflection region layered structure is in the reflection region, and includes a particle layer, the particle layer is configured to provide a granular rough surface on a side of the reflection region layered structure facing away from the base substrate. The reflection electrode is on the particle layer. ## Claims ### Claim 1 An array substrate, comprising: a base substrate comprising a pixel region, the pixel region comprising a reflection region; a reflection region layered structure in the reflection region, the reflection region layered structure comprising a particle layer, the particle layer being configured to provide a granular rough surface on a side of the reflection region layered structure facing away from the base substrate; and a reflection electrode on the particle layer, wherein the reflection region layered structure further comprises a base portion, and the particle layer is on a side of the base portion facing away from the base substrate and is in contact with the base portion, and wherein a material of the base portion comprises a conductive material or a semiconductor material. ### Claim 2 (depends on 1) The array substrate according to claim 1, wherein the material of the base portion comprises a metal oxide, and a material of the particle layer comprises a metal. ### Claim 3 (depends on 2) The array substrate according to claim 2, wherein the metal oxide comprises one selected from the group consisting of indium tin oxide (ITO) and indium gallium zinc oxide (IGZO). ### Claim 4 (depends on 2) The array substrate according to claim 2, wherein the pixel region further comprises a transmission region, the transmission region comprises a transmission electrode, and the reflection region layered structure and the transmission electrode are in a same layer. ### Claim 5 (depends on 2) The array substrate according to claim 2, further comprising a thin film transistor, wherein the thin film transistor comprises a semiconductor active layer and a source-drain electrode layer, the reflection region layered structure and the semiconductor active layer are in a same layer, the reflection electrode and the source-drain electrode layer are in a same layer. ### Claim 6 (depends on 2) The array substrate according to claim 2, further comprises a thin film transistor, wherein the thin film transistor comprises a semiconductor active layer and a source-drain electrode layer, and the source-drain electrode layer comprises a source electrode and a drain electrode, wherein the pixel region further comprises a transmission region, the transmission region comprises a transmission electrode, the transmission electrode is connected with the drain electrode, a material of the base portion and a material of the transmission electrode comprise a same metal oxide, and the base portion and the transmission electrode are of an integral structure. ### Claim 7 (depends on 2) The array substrate according to claim 2, further comprises a thin film transistor, wherein the thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer and a source-drain electrode layer in sequence, the semiconductor active layer and the base portion are in contact with a same surface of the gate insulation layer, a material of the base portion and a material of the semiconductor active layer are a same semiconductor material, the source-drain electrode layer and the reflection electrode are on the semiconductor active layer and the reflection region layered structure, respectively, and a material of the source-drain electrode layer and a material of the reflection electrode are a same conductive material. ### Claim 8 (depends on 1) The array substrate according to claim 1, wherein a size of a particle in the particle layer is less than or equal to 100 nm. ### Claim 9 (depends on 1) A display device comprising the array substrate according to claim 1. ### Claim 10 A manufacturing method of an array substrate, comprising: forming a reflection region film on a base substrate, the base substrate comprising a pixel region, the pixel region comprising a reflection region, the reflection region film being formed in the reflection region; roughening a surface of the reflection region film facing away from the base substrate to form a reflection region layered structure, the reflection region layered structure comprising a particle layer; and forming a reflection electrode on the particle layer, wherein the reflection region layered structure further comprises a base portion, and the particle layer is on a side of the base portion facing away from the base substrate and is in contact with the base portion, and wherein a material of the base portion comprises a conductive material or a semiconductor material. ### Claim 11 (depends on 10) The manufacturing method according to claim 10, wherein roughening the surface of the reflection region film facing away from the base substrate comprises: performing a reduction treatment on the reflection region film to allow metal oxide contained in the surface of the reflection region film to be reduced into metal particles, the particle layer being configured to provide a granular rough surface on a side of the reflection region film facing away from the base substrate. ### Claim 12 (depends on 11) The manufacturing method according to claim 11, wherein the reduction treatment is performed on the reflection region film with a plasma. ### Claim 13 (depends on 12) The manufacturing method according to claim 12, wherein the plasma is a reductive plasma, and the reductive plasma comprises at least one selected from the group consisting of a hydrogen plasma and an ammonia plasma. ### Claim 14 (depends on 10) The manufacturing method according to claim 10, wherein the pixel region further comprises a transmission region, the transmission region comprises a transmission electrode, and the reflection region film and the transmission electrode are formed of a same film by a same patterning process. ### Claim 15 A manufacturing method of an array substrate, comprising: forming a reflection region film on a base substrate, the base substrate comprising a pixel region, the pixel region comprising a reflection region, the reflection region film being formed in the reflection region; roughening a surface of the reflection region film facing away from the base substrate to form a particle layer; and forming a reflection electrode on the particle layer, wherein the manufacturing method further comprises: forming a thin film transistor, wherein the thin film transistor comprises a semiconductor active layer and a source-drain electrode layer, the reflection region film and the semiconductor active layer are formed of a same film by a same patterning process, the reflection electrode and the source-drain electrode layer are formed of a same film by a same patterning process.