# US 10,871,614 B1 · Transverse-electric (TE) pass polarizer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,871,614 B1 - Document ID: US10871614B1 - Status: Granted - Kind: B1 - Application number: 16/502,667 - Filed: 2019-07-03 - Published: 2021-01-07 - Granted: 2020-12-22 - Earliest claimed: 2019-07-03 - Assignees: Globalfoundries Inc. - Applicants: GLOBALFOUNDRIES Inc. - Inventors: Yusheng Bian; Ajey Poovannummoottil Jacob - Web page: https://patentgrep.com/patent/US10871614B1 ## CPC - G02B 6/126: using polarisation effects {(G02B6/1226 takes precedence)} - G02B 6/136: by etching - G02B 2006/12038: {Glass (SiO2 based materials)} - G02B 2006/12061: {Silicon} - G02B 2006/12116: {Polariser; Birefringent} - G02B 2006/12152: {Mode converter} - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract One illustrative TE pass polarizer disclosed herein includes an input/output layer, a first buffer layer positioned above at least a portion of the input/output layer, a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the first buffer layer, and a metal-containing capping layer positioned above at least a portion of the layer of ENZ material. ## Claims ### Claim 1 A transverse-electric (TE) pass polarizer, comprising: a base semiconductor substrate; an input/output layer positioned above the base semiconductor substrate; an insulation material positioned between the input/output layer and the base semiconductor layer; a first buffer layer positioned above at least a portion of the input/output layer; a second buffer layer positioned between the input/output layer and the first buffer layer; a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the first buffer layer; a third buffer layer positioned between the first buffer layer and the layer of ENZ material; a metal-containing capping layer positioned above at least a portion of the layer of ENZ material; and a fourth buffer layer positioned between the layer of ENZ material and the metal-containing capping layer. ### Claim 2 (depends on 1) The TE pass polarizer of claim 1, wherein the input/output layer comprises one of silicon, silicon nitride, SiON, AlN or a polymer, the layer of ENZ material comprises one of graphene, TiN, InAsSb, BSTS (Bi1.5Sb0.5Te1.8Se1.2), AZO or ITO and the first buffer layer comprises one of SiON, Si3N4, SiO2, HfO2, ZrO2, AlN, TiO2, ZnO, Al2O3, MgO, CaF2, SiCOH, MgF2 or a polymer. ### Claim 3 (depends on 1) The TE pass polarizer of claim 1, wherein the TE pass polarizer comprises an optical axis and wherein the input/output layer, the first buffer layer, the layer of ENZ material and the metal-containing capping layer each comprise a lateral width in a direction that is transverse to a direction corresponding to the optical axis, wherein the lateral width of the input/output layer, the first buffer layer, the layer of ENZ material and the metal-containing capping layer are all substantially the same. ### Claim 4 (depends on 1) The TE pass polarizer of claim 1, wherein the layer of ENZ material is a conformal layer of material that engages a top surface and opposing lateral sidewalls of the first buffer layer. ### Claim 5 (depends on 1) The TE pass polarizer of claim 1, wherein the first buffer layer and the fourth buffer layer have substantially the same thickness and are comprised of the same material. ### Claim 6 (depends on 5) The TE pass polarizer of claim 5, wherein the layer of ENZ material is a conformal layer of material that engages a top surface and opposing lateral sidewalls of the first buffer layer. ### Claim 7 (depends on 1) The TE pass polarizer of claim 1, wherein the layer of ENZ material is positioned on and in contact with an upper surface of the third buffer layer, the fourth buffer layer is positioned on and in contact with an upper surface of the layer of ENZ material and the metal-containing capping layer is positioned on and in contact with an upper surface of the fourth buffer layer. ### Claim 8 (depends on 1) The TE pass polarizer of claim 1, further comprising fifth and sixth buffer layers, wherein the fifth buffer layer is positioned between the layer of ENZ material and the fourth buffer layer, and the sixth buffer layer is positioned between the fourth buffer layer and the metal-containing capping layer. ### Claim 9 (depends on 8) The TE pass polarizer of claim 8, wherein the third buffer layer is positioned on and in contact with an upper surface of the input/output layer, the first buffer layer is positioned on and in contact with an upper surface of the third buffer layer, the second buffer layer is positioned on and in contact with an upper surface of the first buffer layer, the layer of ENZ material is positioned on and in contact with an upper surface of the second buffer layer, the fifth buffer layer is positioned on and in contact with an upper surface of the layer of ENZ material, the fourth buffer layer is positioned on and in contact with an upper surface of the fifth buffer layer, the sixth buffer layer is positioned on and in contact with an upper surface of the fourth buffer layer and the metal-containing capping layer is positioned on and in contact with an upper surface of the sixth buffer layer. ### Claim 10 (depends on 8) The TE pass polarizer of claim 8, wherein the first and fourth buffer layers comprise silicon nitride and the second, third, fifth and sixth buffer layers comprise silicon dioxide. ### Claim 11 (depends on 1) The TE pass polarizer of claim 1, wherein the second buffer layer is positioned on and in contact with an upper surface of the input/output layer, the first buffer layer is positioned on and in contact with an upper surface of the second buffer layer, the third buffer layer is positioned on and in contact with an upper surface of the first buffer layer, the layer of ENZ material is positioned on and in contact with an upper surface of the third buffer layer, the fourth buffer layer is positioned on and in contact with an upper surface of the layer of ENZ material and the metal-containing capping layer is positioned on and in contact with an upper surface of the fourth buffer layer. ### Claim 12 (depends on 1) The TE pass polarizer of claim 1, wherein the TE pass polarizer comprises an optical axis and wherein the input/output layer, the first buffer layer, the layer of ENZ material, the second, third and fourth buffer layers and the metal-containing capping layer each comprise a lateral width in a direction that is transverse to a direction corresponding to the optical axis, wherein a lateral width of at least one of the first buffer layer, the layer of ENZ material, the second, third and fourth buffer layers and the metal-containing capping layer is greater than the lateral width of the input/output layer. ### Claim 13 A transverse-electric (TE) pass polarizer, comprising: a base semiconductor substrate; an input/output layer positioned above the base semiconductor substrate; an insulation material positioned between the input/output layer and the base semiconductor layer; a first buffer layer positioned above at least a portion of the input/output layer; a second buffer layer positioned above the first buffer layer; a third buffer layer positioned above the second buffer layer; a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the third buffer layer; a fourth buffer layer positioned above the layer of ENZ material; and a metal-containing capping layer positioned above at least a portion of the fourth buffer layer. ### Claim 14 (depends on 13) The TE pass polarizer of claim 13, wherein the first, third and fourth buffer layers comprise silicon dioxide and the second buffer layer comprises silicon nitride. ### Claim 15 A transverse-electric (TE) pass polarizer, comprising: a base semiconductor substrate; an input/output layer positioned above the base semiconductor substrate; an insulation material positioned between the input/output layer and the base semiconductor layer; a first buffer layer positioned above at least a portion of the input/output layer; a second buffer layer positioned above the first buffer layer; a third buffer layer positioned above the second buffer layer; a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the third buffer layer; a fourth buffer layer positioned above the layer of ENZ material; a fifth buffer layer positioned above the fourth buffer layer; a sixth buffer layer positioned above the fifth buffer layer; and a metal-containing capping layer positioned above at least a portion of the sixth buffer layer. ### Claim 16 (depends on 15) The TE pass polarizer of claim 15, wherein the first, third, fourth and sixth buffer layers comprise silicon dioxide and the second and fifth buffer layers comprise silicon nitride. ### Claim 17 (depends on 15) The TE pass polarizer of claim 15, wherein the TE pass polarizer comprises an optical axis and wherein the input/output layer, the first buffer layer, the layer of ENZ material, the second, third, fourth, fifth, and sixth buffer layers and the metal-containing capping layer each comprise a lateral width in a direction that is transverse to a direction corresponding to the optical axis, wherein a lateral width of at least one of the first buffer layer, the layer of ENZ material, the second, third, fourth, fifth and sixth buffer layers and the metal-containing capping layer is greater than the lateral width of the input/output layer. ### Claim 18 (depends on 15) The TE pass polarizer of claim 15, wherein the input/output layer comprises one of silicon, silicon nitride, SiON, AlN or a polymer, the layer of ENZ material comprises one of graphene, TiN, InAsSb, BSTS (Bi1.5Sb0.5Te1.8Se1.2), AZO or ITO and the first buffer layer comprises one of SiON, Si3N4, SiO2, HfO2, ZrO2, AlN, TiO2, ZnO, Al2O3, MgO, CaF2, SiCOH, MgF2 or a polymer. ### Claim 19 (depends on 15) The TE pass polarizer of claim 15, wherein the TE pass polarizer comprises an optical axis and wherein the input/output layer, the first buffer layer, the second buffer layer, the third buffer layer, the fourth buffer layer, the layer of ENZ material and the metal-containing capping layer each comprise a lateral width in a direction that is transverse to a direction corresponding to the optical axis, wherein the lateral width of the input/output layer, the first buffer layer, the second buffer layer, the third buffer layer, the fourth buffer layer, the layer of ENZ material and the metal-containing capping layer are all substantially the same. ### Claim 20 (depends on 15) The TE pass polarizer of claim 15, wherein the second buffer layer and the fifth buffer layer have substantially the same thickness and are comprised of the same material.